ZHCSG42B March   2017  – February 2020 TCA9803

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化原理图
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Integrated Current Source
      2. 9.3.2 Ultra-Low Power Consumption
      3. 9.3.3 No Static-Voltage Offset
      4. 9.3.4 Active-High Repeater Enable Input
      5. 9.3.5 Powered Off High Impedance I2C Bus Pins on A-Side
      6. 9.3.6 Powered-Off Back-Power Protection for I2C Bus Pins
      7. 9.3.7 Clock Stretching and Multiple Master Arbitration Support
    4. 9.4 Device Functional Modes
      1. 9.4.1 Device Operation Considerations
        1. 9.4.1.1 B-Side Input Low (VIL/IILC/RILC)
          1. 9.4.1.1.1 VILC & IILC
          2. 9.4.1.1.2 RILC
        2. 9.4.1.2 Input and Output Leakage Current (IEXT-I/IEXT-O)
          1. 9.4.1.2.1 IEXT-I
          2. 9.4.1.2.2 IEXT-O
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Device Selection Guide
      2. 10.1.2 Special Considerations for the B-side
        1. 10.1.2.1 FET or Pass-Gate Translators
        2. 10.1.2.2 Buffered Translators/Level-shifters
    2. 10.2 Typical Application
      1. 10.2.1 Single Device
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
        3. 10.2.1.3 Application Curves
      2. 10.2.2 Buffering Without Level-Shifting
        1. 10.2.2.1 Design Requirements
        2. 10.2.2.2 Detailed Design Procedure
        3. 10.2.2.3 Application Curve
      3. 10.2.3 Parallel Device Use Case
        1. 10.2.3.1 Design Requirements
        2. 10.2.3.2 Detailed Design Procedure
        3. 10.2.3.3 Application Curves
      4. 10.2.4 Series Device Use Case
        1. 10.2.4.1 Design Requirements
        2. 10.2.4.2 Detailed Design Procedure
        3. 10.2.4.3 Application Curve
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 文档支持
    2. 13.2 接收文档更新通知
    3. 13.3 支持资源
    4. 13.4 商标
    5. 13.5 静电放电警告
    6. 13.6 Glossary
  14. 14机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

9.4.1.1.2 RILC

The RILC parameter describes the maximum allowed pull-down resistance. This parameter comes from the combination of IILC and ICS, and states the maximum resistance that can satisfy the IILC parameter. Note that series resistors on the bus are going to affect this, as seen with other types of buffers (voltage delta across the series resistor. This increases the effective VOL of the external device pulling the bus low).

The calculated resistance of the internal pull-down FET of an external device can be calculated from the VOL and IOL measurements of the external device in question using Equation 1. Take care to consider any series resistors placed in the path from the TCA980x to any external device. Note that RPD is the calculated resistance of the internal pull-down FET, and not a resistor to ground. This is for determining if the external device's output characteristics meet the TCA980x RILC requirement (150 Ω).

Equation 1. TCA9803 Equation_1_SCPS266.gif
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