ZHCSEL0D February   2016  – October 2021 TCAN1042-Q1 , TCAN1042G-Q1 , TCAN1042GV-Q1 , TCAN1042H-Q1 , TCAN1042HG-Q1 , TCAN1042HGV-Q1 , TCAN1042HV-Q1 , TCAN1042V-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configurations and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 ESD Ratings, Specifications
    4. 7.4 Recommended Operating Conditions
    5. 7.5 Thermal Information
    6. 7.6 Power Rating
    7. 7.7 Electrical Characteristics
    8. 7.8 Switching Characteristics
    9. 7.9 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 TXD Dominant Timeout (DTO)
      2. 9.3.2 Thermal Shutdown (TSD)
      3. 9.3.3 Undervoltage Lockout
      4. 9.3.4 Unpowered Device
      5. 9.3.5 Floating Terminals
      6. 9.3.6 CAN Bus Short Circuit Current Limiting
      7. 9.3.7 Digital Inputs and Outputs
        1. 9.3.7.1 Devices with VCC Only (Devices without the "V" Suffix):
        2. 9.3.7.2 Devices with VIO I/O Level Shifting (Devices with "V" Suffix):
    4. 9.4 Device Functional Modes
      1. 9.4.1 CAN Bus States
      2. 9.4.2 Normal Mode
      3. 9.4.3 Standby Mode
        1. 9.4.3.1 Remote Wake Request via Wake Up Pattern (WUP) in Standby Mode
      4. 9.4.4 Driver and Receiver Function Tables
  10. 10Application Information Disclaimer
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 Design Requirements
        1. 10.2.1.1 Bus Loading, Length and Number of Nodes
      2. 10.2.2 Detailed Design Procedures
        1. 10.2.2.1 CAN Termination
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Device and Documentation Support
    1. 12.1 接收文档更新通知
    2. 12.2 支持资源
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 术语表
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • D|8
  • DRB|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.5 Thermal Information

Thermal Metric(1)TEST CONDITIONSTCAN1042-Q1UNIT
D (SOIC)DRB (VSON)
8 Pins8 Pins
RθJAJunction-to-air thermal resistanceHigh-K thermal resistance(2)105.848.3°C/W
RθJBJunction-to-board thermal resistance(3)46.817.2°C/W
RθJC(TOP)Junction-to-case (top) thermal resistance(4)48.337.6°C/W
ΨJTJunction-to-top characterization parameter(5)8.71.8°C/W
ΨJBJunction-to-board characterization parameter(6)46.217.1°C/W
TTSDThermal shutdown temperature170170°C
TTSD_HYSThermal shutdown hysteresis55°C
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
(2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, High-K board, as specified in JESD51-7, in an environment described in JESD51-2a.
(3) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8.
(4) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(5) The junction-to-top characterization parameter, ΨJT, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7).
(6) The junction-to-board characterization parameter, ΨJB estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7).
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