ZHCSQB3A january   2023  – july 2023 THS2630

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Revision History
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
      1. 7.4.1 Power-Down Mode
  9. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Output Common-Mode Voltage
        1. 8.1.1.1 Resistor Matching
      2. 8.1.2 Driving a Capacitive Load
      3. 8.1.3 Data Converters
      4. 8.1.4 Single-Supply Applications
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Active Antialias Filtering
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 PowerPAD™ Integrated Circuit Package Design Considerations
      2. 8.4.2 Layout Example
  10. Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 接收文档更新通知
    3. 9.3 支持资源
    4. 9.4 Trademarks
    5. 9.5 静电放电警告
    6. 9.6 术语表
  11. 10Mechanical, Packaging, and Orderable Information

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Electrical Characteristics

at VCC = ±5 V, gain = 1 V/V, R= 390 Ω, RL = 800 Ω, and TA = +25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DYNAMIC PERFORMANCE
SSBW Small-signal bandwidth (–3 dB) Gain = 1, RF = 390 Ω,
VI = 63 mVPP, single-ended input, differential output
VCC = 5 V 181 MHz
VCC = ±5 V 183
VCC = ±15 V 187
Gain = 2, R= 750 Ω,
VI = 63 mVPP, single-ended input, differential output
VCC = 5 V 108
VCC = ±5 V 108
VCC = ±15 V 111
VOCM small-signal bandwidth VI = 63 mVPP 100 MHz
GBW Gain-bandwidth product VO = 200 mVPP, gain = 20, RF = 750 Ω 245 MHz
SR Slew rate(2) 75 V/µs
ts Settling time To 0.1% Step voltage = 2 V, gain = 1 31 ns
To 0.01% Step voltage = 2 V, gain = 1 52
DISTORTION PERFORMANCE
THD Total harmonic distortion VCC = 5 V, VO = 2 VPP, differential input/output f = 250 kHz –106 dBc
f = 1 MHz –93
VCC = ±5 V, VO = 2 VPP, differential input/output f = 250 kHz –106
f = 1 MHz –93
VCC = ±15 V, VO = 2 VPP, differential input/output f = 250 kHz –108
f = 1 MHz –94
VCC = ±5 V, VO = 4 VPP, differential input/output f = 250 kHz –99
f = 1 MHz –84
VCC = ±15 V, VO = 4 VPP, differential input/output f = 250 kHz –100
f = 1 MHz –86
HD2 Second harmonic distortion VCC = 5 V, VO = 2 VPP,
Rf = 390 Ω, RL = 800 Ω,
gain = 1, differential input/output
f = 250 kHz –116 dBc
f = 1 MHz –106
VCC = ±5 V, VO = 2 VPP,
Rf = 390 Ω, RL = 800 Ω,
gain = 1, differential input/output
f = 250 kHz –116
f = 1 MHz –106
VCC = ±15 V, VO = 2 VPP,
Rf = 390 Ω, RL = 800 Ω,
gain = 1, differential input/output
f = 250 kHz –117
f = 1 MHz –107
VCC = ±5 V, VO = 4 VPP,
Rf = 390 Ω, RL = 800 Ω,
gain = 1, differential input/output
f = 250 kHz –115
f = 1 MHz –101
VCC = ±15 V, VO = 4 VPP,
Rf = 390 Ω, RL = 800 Ω,
gain = 1, differential input/output
f = 250 kHz –116
f = 1 MHz –102
HD3 Third harmonic distortion VCC = 5 V, VO = 2 VPP,
Rf = 390 Ω, RL = 800 Ω,
gain = 1, differential input/output
f = 250 kHz –111 dBc
f = 1 MHz –100
VCC = ±5 V, VO = 2 VPP,
Rf = 390 Ω, RL = 800 Ω,
gain = 1, differential input/output
f = 250 kHz –114
f = 1 MHz –99
VCC = ±15 V, VO = 2 VPP,
Rf = 390 Ω, RL = 800 Ω,
gain = 1, differential input/output
f = 250 kHz –117
f = 1 MHz –102
VCC = ±5 V, VO = 4 VPP,
Rf = 390 Ω, RL = 800 Ω,
gain = 1, differential input/output
f = 250 kHz –107
f = 1 MHz –91
VCC = ±15 V, VO = 4 VPP,
Rf = 390 Ω, RL = 800 Ω,
gain = 1, differential input/output
f = 250 kHz –110
f = 1 MHz –93
SFDR Spurious-free dynamic range VO= 2 VPP, f = 250 kHz,
differential input/output
VCC = ±2.5 109 dBc
VCC = ±5 112
VCC = ±15 116
VO = 4 VPP, f = 250 kHz,
differential input/output
VCC = ±5 104
VCC = ±15 106
IMD3 Third intermodulation distortion VI(PP) = 4 V, F1 = 3 MHz, F2 = 3.5 MHz –53 dBc
OIP3 Third-order intercept VI(PP) = 4 V, F1 = 3 MHz, F2 = 3.5 MHz 41.5 dB
NOISE PERFORMANCE
Vn Input voltage noise f = 10 kHz 1.1 nV/√Hz
In Input current noise f = 10 kHz 1.3 pA/√Hz
DC PERFORMANCE
AOL Open-loop gain TA = 25°C 91 95 dB
TA = full range 85
VOS Input offset voltage TA = 25°C −1.3 ±0.1 1.3 mV
TA = full range 1.5
Input offset voltage drift TA = full range  0.8 3.2 µV/°C
IIB Input bias current TA = 25℃ 4.8 9.8 µA
TA = full range 4.8 15.1
IOS Input offset current TA = 25℃ −250 22 350 nA
TA = full range 400
Input offset current drift 0.13 nA/°C
INPUT CHARACTERISTICS
CMRR Common-mode rejection ratio TA = 25℃
81 95 dB
VICM Common-mode input voltage –3.77 to 4.3 –4 to 4.5 V
RI Input resistance Common-mode, measured into each input pin 320
Differential, measured into each input pin 12
CI_CM Common-mode input capacitance Measured into each input pin, closed loop 1.3 pF
CI_DIFF Differential input capacitance Measured into each input pin, closed loop 2.3 pF
OUTPUT CHARACTERISTICS
RO Output resistance Open loop 26 Ω
Output voltage swing VCC = ±15 V, R= 1 kΩ TA = 25°C ±13.1 ±13.4 V
TA = full range ±12.9 V
IO Output current VCC = 5 V, RL = 7 Ω TA = 25°C 25 45 mA
TA = full range 20
VCC = ±5 V, RL = 7 Ω TA = 25°C 30 55
TA = full range 28
VCC = ±15 V, RL = 7 Ω TA = 25°C 65 85
TA = full range 60
POWER SUPPLY
IQ Quiescent current VCC = ±5 V TA = 25°C 8.9 10.5 mA
TA = full range 12.4
VCC = ±15 V 11 13.2
VCC = ±17.5 V 11 13.2
ISD Shutdown current
(THS2630S only)
PD = –5 V 0.77 0.92 mA
PSRR Power-supply rejection ratio 76 98 dB
OUTPUT COMMON-MODE (VOCM) CONTROL
VOCM offset voltage VOCM driven to midsupply −2.7 0.2 2.7 mV
Default VOCM offset Relative to midsupply, VOCM pin floating −10 0.65 10 mV
VOCM input range low VCC = ±15 V –14 V
VCC = ±5 V –4.1 –4
VOCM input range high VCC = ±15 V 13.7 V
VCC = ±5 V 3.5 3.8
VOCM input noise Flat-band noise, VOCM driven 13 nV/√Hz
VOCM input resistance 15
Slew rate is measured from an output level range of 25% to 75%.