ZHCSFB6D April   2016  – June 2021 THS4551

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 描述
  4. 4 Revision History
  5. 5 Companion Devices
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics: (VS+) – (VS–) = 5 V
    6. 7.6 Electrical Characteristics: (VS+) – (VS–) = 3 V
    7. 7.7 Typical Characteristics: (VS+) – (VS–) = 5 V
    8. 7.8 Typical Characteristics: (VS+) – (VS–) = 3 V
    9. 7.9 Typical Characteristics: 3-V to 5-V Supply Range
  8. 8 Parameter Measurement Information
    1. 8.1 Example Characterization Circuits
    2. 8.2 Output Interface Circuit for DC-Coupled Differential Testing
    3. 8.3 Output Common-Mode Measurements
    4. 8.4 Differential Amplifier Noise Measurements
    5. 8.5 Balanced Split-Supply Versus Single-Supply Characterization
    6. 8.6 Simulated Characterization Curves
    7. 8.7 Terminology and Application Assumptions
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Differential Open-Loop Gain and Output Impedance
      2. 9.3.2 Setting Resistor Values Versus Gain
      3. 9.3.3 I/O Headroom Considerations
      4. 9.3.4 Output DC Error and Drift Calculations and the Effect of Resistor Imbalances
    4. 9.4 Device Functional Modes
      1. 9.4.1 Operation from Single-Ended Sources to Differential Outputs
        1. 9.4.1.1 AC-Coupled Signal Path Considerations for Single-Ended Input to Differential Output Conversions
        2. 9.4.1.2 DC-Coupled Input Signal Path Considerations for Single-Ended to Differential Conversions
      2. 9.4.2 Operation from a Differential Input to a Differential Output
        1. 9.4.2.1 AC-Coupled, Differential-Input to Differential-Output Design Issues
        2. 9.4.2.2 DC-Coupled, Differential-Input to Differential-Output Design Issues
      3. 9.4.3 Input Overdrive Performance
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Noise Analysis
      2. 10.1.2 Factors Influencing Harmonic Distortion
      3. 10.1.3 Driving Capacitive Loads
      4. 10.1.4 Interfacing to High-Performance Precision ADCs
      5. 10.1.5 Operating the Power Shutdown Feature
      6. 10.1.6 Designing Attenuators
      7. 10.1.7 The Effect of Adding a Feedback Capacitor
    2. 10.2 Typical Applications
      1. 10.2.1 An MFB Filter Driving an ADC Application
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
        3. 10.2.1.3 Application Curves
      2. 10.2.2 Differential Transimpedance Output to a High-Grade Audio PCM DAC Application
        1. 10.2.2.1 Design Requirements
        2. 10.2.2.2 Detailed Design Procedure
        3. 10.2.2.3 Application Curves
      3. 10.2.3 ADC3k Driver with a 2nd-Order RLC Interstage Filter Application
        1. 10.2.3.1 Design Requirements
        2. 10.2.3.2 Detailed Design Procedure
        3. 10.2.3.3 Application Curve
  11. 11Power Supply Recommendations
    1. 11.1 Thermal Analysis
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 Board Layout Recommendations
    2. 12.2 Layout Example
    3. 12.3 EVM Board
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 TINA-TI Simulation Model Features
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 接收文档更新通知
    4. 13.4 支持资源
    5. 13.5 Trademarks
    6. 13.6 静电放电警告
    7. 13.7 术语表
  14. 14Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.2 ESD Ratings

VALUEUNIT
A. THS4551 in DGK, RUN Pacakges
V(ESD)Electrostatic dischargeHuman body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)±2500V
Charged device model (CDM), per JEDEC specification JESD22-C101(2)±1250
B. THS4551 in RGT Package
V(ESD)Electrostatic dischargeHuman body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)(3)±1000V
Charged device model (CDM), per JEDEC specification JESD22-C101(2)±1250
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(3) ESD limit of ±1000 V for any pin to thermal pad. Pin-to-pin HBM ESD specifications are rated at ±2500 V.
千亿体育app官网登录(中国)官方网站IOS/安卓通用版/手机APP | 米乐app下载官网（中国）|ios|Android/通用版APP最新版 | 米乐|米乐·M6（中国大陆）官方网站 | 千亿体育登陆地址 | 华体会体育（中国）HTH·官方网站 | 千赢qy国际_全站最新版千赢qy国际V6.2.14安卓/IOS下载 | 18新利网v1.2.5|中国官方网站 | bob电竞真人（中国官网）安卓/ios苹果/电脑版【1.97.95版下载】 | 千亿体育app官方下载(中国)官方网站IOS/安卓/手机APP下载安装 |