ZHCSQ45A january   2023  – july 2023 THVD1454

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  ESD Ratings [IEC]
    4. 6.4  Recommended Operating Conditions
    5. 6.5  Thermal Information
    6. 6.6  Power Dissipation
    7. 6.7  Electrical Characteristics
    8. 6.8  Switching Characteristics_500 kbps
    9. 6.9  Switching Characteristics_20 Mbps
    10. 6.10 Switching Characteristics_Termination resistor
    11. 6.11 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagrams
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
      1. 8.4.1 On-Chip Switchable Termination
      2. 8.4.2 Operational Data rate
      3. 8.4.3 Protection Features
  10. 9 Application Information Disclaimer
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 Data Rate and Bus Length
        2. 9.2.1.2 Stub Length
        3. 9.2.1.3 Bus Loading
        4. 9.2.1.4 Receiver Failsafe
        5. 9.2.1.5 Transient Protection
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 10.2 接收文档更新通知
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 静电放电警告
    6. 10.6 术语表
  12. 11Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.3 ESD Ratings [IEC]

VALUE UNIT
V(ESD) Electrostatic discharge, on chip termination ON or OFF Contact discharge, per IEC 61000-4-2 Bus terminals and GND ±8,000 V
Air-gap discharge, per IEC 61000-4-2 Bus terminals and GND ±15,000
V(EFT) Electrical fast transient Per IEC 61000-4-4 Bus terminals ±4,000 V
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