| | VALUE | UNIT |
|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | All pins | ±2000 | V |
| Pins IN0-IN23(2) | ±4000 |
| Charged-device model (CDM), per AEC Q100-011 | All pins | ±500 |
| Corner pins (pin 1, 19, 20 and 38) | ±750 |
| Contact discharge, un-powered, per ISO- 10605(3)(5) | Pins IN0-IN23 | ±8000 |
| Contact discharge, powered-up, per ISO- 10605 (4)(6) | Pins IN0-IN23 | ±8000 |
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
(2) ±4kV rating on pins IN0-IN23 are stressed with respect to GND (with AGND, DGND, and EP tied together).
(3) External components: capacitor = 15 nF; resistor = 10 Ω
(4) External components: capacitor = 15 nF; resistor = 33 Ω
(5) ESD generator parameters: storage capacitance = 150 pF; discharge resistance = 330 Ω or 2000 Ω
(6) ESD generator parameters: storage capacitance = 150 pF or 330pF; discharge resistance = 330 Ω or 2000 Ω