ZHCSGP5C August   2017  – February 2022 TIC12400-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  VS Pin
      2. 8.3.2  VDD Pin
      3. 8.3.3  Device Initialization
      4. 8.3.4  Device Trigger
      5. 8.3.5  Device Reset
        1. 8.3.5.1 VS Supply POR
        2. 8.3.5.2 Hardware Reset
        3. 8.3.5.3 Software Reset
      6. 8.3.6  VS Under-Voltage (UV) Condition
      7. 8.3.7  VS Over-Voltage (OV) Condition
      8. 8.3.8  Switch Inputs Settings
        1. 8.3.8.1 Input Current Source and Sink Selection
        2. 8.3.8.2 Input Mode Selection
        3. 8.3.8.3 Input Enable Selection
        4. 8.3.8.4 Thresholds Adjustment
        5. 8.3.8.5 Wetting Current Configuration
      9. 8.3.9  Interrupt Generation and INT Assertion
        1. 8.3.9.1 INT Pin Assertion Scheme
        2. 8.3.9.2 Interrupt Idle Time (tINT_IDLE) Time
        3. 8.3.9.3 Microcontroller Wake-Up
        4. 8.3.9.4 Interrupt Enable or Disable and Interrupt Generation Conditions
        5. 8.3.9.5 Detection Filter
      10. 8.3.10 Temperature Monitor
        1. 8.3.10.1 Temperature Warning (TW)
        2. 8.3.10.2 Temperature Shutdown (TSD)
      11. 8.3.11 Parity Check and Parity Generation
      12. 8.3.12 Cyclic Redundancy Check (CRC)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Continuous Mode
      2. 8.4.2 Polling Mode
        1. 8.4.2.1 Standard Polling
        2. 8.4.2.2 Matrix polling
      3. 8.4.3 Additional Features
        1. 8.4.3.1 Clean Current Polling (CCP)
        2. 8.4.3.2 Wetting Current Auto-Scaling
        3. 8.4.3.3 VS Measurement
        4. 8.4.3.4 Wetting Current Diagnostic
        5. 8.4.3.5 ADC Self-Diagnostic
    5. 8.5 Programming
      1. 8.5.1 SPI Communication Interface Buses
        1. 8.5.1.1 Chip Select ( CS)
        2. 8.5.1.2 System Clock (SCLK)
        3. 8.5.1.3 Slave In (SI)
        4. 8.5.1.4 Slave Out (SO)
      2. 8.5.2 SPI Sequence
        1. 8.5.2.1 Read Operation
        2. 8.5.2.2 Write Operation
        3. 8.5.2.3 Status Flag
    6. 8.6 Register Maps
    7. 8.7 Programming Guidelines
  9. 9 Application Information Disclaimer
    1. 9.1 Application Information
    2. 9.2 Using TIC12400-Q1 in a 12 V Automotive System
    3. 9.3 Resistor-coded Switches Detection in Automotive Body Control Module
      1. 9.3.1 Design Requirements
      2. 9.3.2 Detailed Design Procedure
      3. 9.3.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 接收文档更新通知
    2. 12.2 支持资源
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 术语表
  13. 13Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) All pins ±2000 V
Pins IN0-IN23(2) ±4000
Charged-device model (CDM), per AEC Q100-011 All pins ±500
Corner pins (pin 1, 19, 20 and 38) ±750
Contact discharge, un-powered, per ISO- 10605:
  • External components: capacitor = 15 nF; resistor = 10 Ω
  • ESD generator parameters: storage capacitance = 150 pF; discharge resistance = 330 Ω or 2000 Ω
 Pins IN0-IN23 ±8000
Contact discharge, powered-up, per ISO- 10605:
  • External components: capacitor = 15 nF; resistor = 33 Ω
  • ESD generator parameters: storage capacitance = 150 pF or 330pF; discharge resistance = 330 Ω or 2000 Ω
 Pins IN0-IN23 ±8000
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
(2) ±4-kV rating on pins IN0-IN23 are stressed with respect to GND (with AGND, DGND, and EP tied together).
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