米6体育平台手机版

ZHCSGF4D July 2017 – June 2019 TIOL111 , TIOL1113 , TIOL1115

PRODUCTION DATA.

封装选项

机械数据 (封装 | 引脚)

DMW|10
- MPSS089

散热焊盘机械数据 (封装 | 引脚)

订购信息

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
POWER SUPPLIES (L+)
I_(L+)	Quiescent supply current	EN = LOW, no load			1	1.5	mA
I_(L+)	Quiescent supply current	EN = HIGH, no load			2	2.7	mA
LOGIC-LEVEL INPUTS (EN, TX)
V_IL	Input logic low voltage					0.8	V
V_IH	Input logic high voltage			2			V
R_PD	Pull-down (EN) resistance				100		kΩ
R_PU	Pull-up (TX) resistance				200		kΩ
CONTROL OUTPUTS (WAKE, NFAULT)
V_OL	Output logic low voltage	I_O = 4 mA				0.5	V
I_OZ	Output high impedance leakage	Output in Hi-Z, V_O = 0 V or VCC_IN/OUT		–1		1	µA
DRIVER OUTPUT (CQ)
V_DS(ON)	High-side driver residual voltage	I = 250 mA				1.75	V
		I = 200 mA				1.5	V
		I = 100 mA				1.1	V
	Low-side driver residual voltage	I = 250 mA				1.75	V
		I = 200 mA				1.5	V
		I = 100 mA				1.1	V
V_IM	Voltage between CQ and L- during IO-Link Master wake-up pulse	High-side configuration, R_load= 26 Ω between CQ and L-, 18 V ≤ V_(L+) ≤ 30 V		14.5			V
		Low-side configuration, R_load= 24 Ω between CQ and L+, V_(L+) = 20 V				4	V
		Low-side configuration, R_load= 44 Ω between CQ and L+, V_(L+) = 30 V				4	V
I_OZ	CQ leakage	EN = LOW, 0 ≤ V_(CQ) ≤ (V_(L+) - 0.1 V)		–2		2	µA
I_O(LIM)	Driver output current limit	R_SET = 100 kΩ		35	50	70	mA
		R_SET = 0 kΩ		300	350	400	mA
		R_SET = OPEN⁽¹⁾		300	350	400	mA
RECEIVER INPUT (CQ)
V_(THH)	Input threshold “H”	V_(L+)> 18 V		10.5		13	V
V_(THL)	Input threshold “L"			8		11.5	V
V_(HYS)	Receiver Hysteresis (V_(THH) - V_(THL))				0.75		V
V_(THH)	Input threshold “H”	V_(L+)< 18 V		See Note ⁽²⁾		See Note ⁽³⁾	V
V_(THL)	Input threshold “L"			See Note ⁽⁴⁾		See Note ⁽⁵⁾	V
V_(HYS)	Receiver Hysteresis (V_(THH) - V_(THL))				0.75		V
V_OL	RX output low voltage	I_OL = 4 mA				0.4	V
V_OH	RX output high voltage	I_OL = –4 mA		VCC_IN/ OUT–0.5			V
PROTECTION CIRCUITS
V_(UVLO)	L+ under voltage lockout	L+ falling; NFAULT = Hi-Z				6	V
V_(UVLO)	L+ under voltage lockout	L+ rising; NFAULT = LOW				6.5	V
V_(UVLO,HYS)	L+ under voltage hysteresis	Rising to falling threshold		100			mV
V_{(UVLO_IN)}	VCC_IN under voltage lockout (No LDO option)	VCC_IN falling; NFAULT = Hi-Z			2.4		V
V_{(UVLO_IN)}	VCC_IN under voltage lockout (No LDO option)	VCC_IN rising; NFAULT = LOW			2.5		V
V_(UVLO,HYS)	VCC_IN under voltage hysteresis (No LDO option)	Rising to falling threshold			100		mV
T_(WRN)	Thermal warning	Die temperature T_J		125			°C
T_(SDN)	Thermal shutdown			150	160		°C
T_(HYS)	Thermal hysteresis for shutdown				10		°C
I_REV	Leakage current in reverse polarity	EN = LOW, TX=x; V_(CQ) < V_(L-) or V_(CQ) > V_(L+), up to \|36 V\|				50	µA
		EN = LOW, TX=x; V_(CQ) < V_(L-) or V_(CQ) > V_(L+), up to \|60 V\|				80	µA
		EN = HIGH, TX = LOW; V_{(CQ to L+)} = 3 V				550	µA
		EN = HIGH, TX = HIGH; V_{(CQ to L-)} = -3 V				10	µA
LINEAR REGULATOR (LDO)
V_{(VCC_OUT)}	Voltage regulator output	TIOL1115		4.75	5	5.25	V
V_{(VCC_OUT)}	Voltage regulator output	TIOL1113		3.13	3.3	3.46	V
V_(DROP)	Voltage regulator drop-out voltage (V_(L+) – V_{(VCC_OUT)})	I_CC = 20 mA load current	TIOL1115			1.9	V
V_(DROP)	Voltage regulator drop-out voltage (V_(L+) – V_{(VCC_OUT)})	I_CC = 20 mA load current	TIOL1113			2.3	V
REG	Line regulation (dV_{(VCC_OUT)}/dV(L+))	I_{(VCC_OUT)} = 1 mA				1.7	mV/V
L_REG	Load regulation (dV_{(VCC_OUT)}/V_{(VCC_OUT)})	V_(L+) = 24 V, I_{(VCC_OUT)}= 100 µA to 20 mA				1%
PSSR	Power Supply Rejection Ratio	100 kHz, I_{(VCC_OUT)} = 20 mA			40		dB

(1) Current fault indication will be active. Current fault auto recovery will be de-activated.

(2) V_THH (min) = 5 V + (11/18) [V_(L+) - 8 V]

(3) V_THH (max) = 6.5 V + (13/18) [V_(L+)- 8 V]

(4) V_THL(min) = 4 V + (8/18) [V_(L+)-8 V]

(5) V_THL(max) = 6 V + (11/18) [V_(L+) -8 V]