ZHCSJY5D June   2019  – June 2022 TLIN1021-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 说明（续）
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Thermal Information
    4. 7.4 Recommended Operating Conditions
    5. 7.5 Power Supply Characteristics
    6. 7.6 Electrical Characteristics
    7. 7.7 AC Switching Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  LIN
        1. 9.3.1.1 LIN Transmitter Characteristics
        2. 9.3.1.2 LIN Receiver Characteristics
          1. 9.3.1.2.1 Termination
      2. 9.3.2  TXD
      3. 9.3.3  RXD
      4. 9.3.4  VSUP
      5. 9.3.5  GND
      6. 9.3.6  EN
      7. 9.3.7  WAKE
      8. 9.3.8  INH
      9. 9.3.9  Local Faults
      10. 9.3.10 TXD Dominant Time-Out (DTO)
      11. 9.3.11 Bus Stuck Dominant System Fault: False Wake-Up Lockout
      12. 9.3.12 Thermal Shutdown
      13. 9.3.13 Under Voltage on VSUP
      14. 9.3.14 Unpowered Device
    4. 9.4 Device Functional Modes
      1. 9.4.1 Normal Mode
      2. 9.4.2 Sleep Mode
      3. 9.4.3 Standby Mode
      4. 9.4.4 Wake-Up Events
        1. 9.4.4.1 Local Wake-Up (LWU) via WAKE Input Terminal
        2. 9.4.4.2 Wake-Up Request (RXD)
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedures
        1. 10.2.2.1 Normal Mode Application Note
        2. 10.2.2.2 TXD Dominant State Time-Out Application Note
      3. 10.2.3 Application Curves
    3. 10.3 Power Supply Recommendations
    4.     Layout
      1. 10.4.1 Layout Guidelines
      2. 10.4.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 接收文档更新通知
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 术语表
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.2 ESD Ratings

VALUE UNIT
VESD Electrostatic discharge Human body model (HBM) classification level 3B: VSUP, INH, and WAKE with respect to ground ±8000 V
Human body model (HBM) classification level 3B: LIN with respect to ground ±10000
Human body model (HBM) classification level 3A: all other pins, per AEC Q100-002(1) ±4000
Charged device model (CDM) classification level C5, per AEC Q100-011 All pins ±750
LIN, VSUP, WAKE terminal to GND(2) IEC 62228-3 per ISO 10605
Contact discharge
R = 330 Ω, C = 150 pF (IEC 61000-4-2)		 ±8000
LIN terminal to GND(2) IEC 62228-3 per ISO 10605
Indirect contact discharge
R = 330 Ω, C = 150 pF (IEC 61000-4-2)		 ±8000
LIN terminal to GND(3) SAE J2962-1 per ISO 10605
Contact discharge		 ±8000
LIN terminal to GND(3) SAE J2962-1 per ISO 10605
Air discharge		 ±25000
VTRAN Non-synchronous transient injection LIN, VSUP, WAKE terminal to GND(2) IEC 62228-3 per IEC 62215-3
12 V electrical systems
Pulse 1		 -100
IEC 62228-3 per IEC 62215-3
12 V electrical systems
Pulse 2		 75
IEC 62228-3 per IEC 62215-3
12 V electrical systems
Pulse 3a		 -150
IEC 62228-3 per IEC 62215-3
12 V electrical systems
Pulse 3b		 150
Direct capacitor coupling LIN terminal to GND(3) SAE J2962-1 per ISO 7637-3
DCC - Slow transient pulse		 ±85
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
(2) Results given here are specific to the IEC 62228-2 Integrated circuits – EMC evaluation of transceivers – Part 2: LIN transceivers. Testing performed by OEM approved independent 3rd party, EMC report available upon request.
(3) Results given here are specific to the SAE J2962-1 Communication Transceivers Qualification Requirements - LIN. Testing performed by OEM approved independent 3rd party up to ±35V, EMC report available upon request. ±85V verified internally during characterization
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