ZHCSBX7D December 2013 – June 2015 TLV1701 , TLV1702 , TLV1704
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Supply voltage | +40 (±20) | V | ||
Signal input pins | Voltage(2) | (VS–) – 0.5 | (VS+) + 0.5 | V |
Current(2) | ±10 | mA | ||
Output short-circuit(3) | Continuous | mA | ||
Operating temperature range | –55 | +150 | °C | |
Junction temperature, TJ | 150 | °C | ||
Storage temperature, Tstg | –65 | +150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
TLV1701 and TLV1702 | ||||
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1500 | |||
TLV1704 | ||||
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±1000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1500 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
Supply voltage VS = (VS+) – (VS–) | 2.2 (±1.1) | 36 (±18) | V | ||
Specified temperature | –40 | 125 | °C |
THERMAL METRIC(1) | TLV1701 | UNIT | |||
---|---|---|---|---|---|
DRL (SOT553) | DCK (SC70) | DBV (SOT23) | |||
5 PINS | 5 PINS | 5 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 271.5 | 283.6 | 233.1 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 115.6 | 94.1 | 156.4 | °C/W |
RθJB | Junction-to-board thermal resistance | 89.7 | 61.3 | 60.6 | °C/W |
ψJT | Junction-to-top characterization parameter | 17.6 | 1.9 | 35.7 | °C/W |
ψJB | Junction-to-board characterization parameter | 89.2 | 60.5 | 59.7 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | N/A | N/A | °C/W |
THERMAL METRIC(1) | TLV1702 | TLV1704 | UNIT | ||
---|---|---|---|---|---|
RUG (QFN) | DGK (VSSOP) | PW (TSSOP) | |||
8 PINS | 8 PINS | 14 PINS | |||
θJA | Junction-to-ambient thermal resistance | 205.6 | 199 | 128.1 | °C/W |
θJCtop | Junction-to-case (top) thermal resistance | 77.1 | 89.5 | 56.5 | °C/W |
θJB | Junction-to-board thermal resistance | 107.0 | 120.4 | 69.9 | °C/W |
ψJT | Junction-to-top characterization parameter | 2.0 | 22.0 | 9.1 | °C/W |
ψJB | Junction-to-board characterization parameter | 107.0 | 118.7 | 69.3 | °C/W |
θJCbot | Junction-to-case (bottom) thermal resistance | N/A | N/A | N/A | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
OFFSET VOLTAGE | |||||||
VOS | Input offset voltage | TA = 25°C, VS = 2.2 V | ±0.5 | ±3.5 | mV | ||
TA = 25°C, VS = 36 V | ±0.3 | ±2.5 | mV | ||||
TA = –40°C to +125°C | ±5.5 | mV | |||||
dVOS/dT | Input offset voltage drift | TA = –40°C to +125°C | ±4 | ±20 | μV/°C | ||
PSRR | Power-supply rejection ratio | 15 | 100 | μV/V | |||
TA = –40°C to +125°C | 20 | μV/V | |||||
INPUT VOLTAGE RANGE | |||||||
VCM | Common-mode voltage range | TA = –40°C to +125°C | (V–) | (V+) | V | ||
INPUT BIAS CURRENT | |||||||
IB | Input bias current | 5 | 15 | nA | |||
TA = –40°C to +125°C | 20 | nA | |||||
IOS | Input offset current | 0.5 | nA | ||||
CLOAD | Capacitive load drive | See Typical Characteristics | |||||
OUTPUT | |||||||
VO | Voltage output swing from rail | IO ≤ 4 mA, input overdrive = 100 mV, VS = 36 V |
900 | mV | |||
IO = 0 mA, input overdrive = 100 mV, VS = 36 V |
600 | mV | |||||
ISC | Short circuit sink current | 20 | mA | ||||
Output leakage current | VIN+ > VIN– | 70 | nA | ||||
POWER SUPPLY | |||||||
VS | Specified voltage range | 2.2 | 36 | V | |||
IQ | Quiescent current (per channel) | IO = 0 A | 55 | 75 | μA | ||
IO = 0 A, TA = –40°C to +125°C | 100 | μA |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
tpHL | Propagation delay time, high-to-low | Input overdrive = 100 mV | 460 | ns | ||
tpLH | Propagation delay time, low-to-high | Input overdrive = 100 mV | 560 | ns | ||
tR | Rise time | Input overdrive = 100 mV | 365 | ns | ||
tF | Fall time | Input overdrive = 100 mV | 240 | ns |