ZHCSK18 July   2019 TLV2186

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     Device Images
      1.      高侧电流分流监控器应用
      2.      VOS 与输入共模电压
  4. 修订历史记录
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Rail-to-Rail Inputs
      2. 7.3.2 Phase-Reversal Protection
      3. 7.3.3 Input Bias Current Clock Feedthrough
      4. 7.3.4 EMI Rejection
        1. 7.3.4.1 EMIRR +IN Test Configuration
      5. 7.3.5 Electrical Overstress
      6. 7.3.6 MUX-Friendly Inputs
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Basic Noise Calculations
    2. 8.2 Typical Applications
      1. 8.2.1 High-Side Current Sensing
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Bridge Amplifier
      3. 8.2.3 Low-Side Current Monitor
      4. 8.2.4 RTD Amplifier With Linearization
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 开发支持
        1. 11.1.1.1 TINA-TI(免费软件下载)
        2. 11.1.1.2 TI 高精度设计
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 接收文档更新通知
    4. 11.4 社区资源
    5. 11.5 商标
    6. 11.6 静电放电警告
    7. 11.7 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Electrical Overstress

Designers often ask questions about the capability of an operational amplifier to withstand electrical overstress. These questions tend to focus on the device inputs, but may involve the supply voltage pins or even the output pin. Each of these different pin functions have electrical stress limits determined by the voltage breakdown characteristics of the particular semiconductor fabrication process and specific circuits connected to the pin. Additionally, internal electrostatic discharge (ESD) protection is built into these circuits to protect from accidental ESD events both before and during product assembly.

Having a good understanding of this basic ESD circuitry and the relevance to an electrical overstress event is helpful. See Figure 42 for an illustration of the ESD circuits contained in the TLV2186 (indicated by the dashed line area). The ESD protection circuitry involves several current-steering diodes connected from the input and output pins and routed back to the internal power-supply lines, where the diodes meet at an absorption device internal to the operational amplifier. This protection circuitry is intended to remain inactive during normal circuit operation.

An ESD event produces a short-duration, high-voltage pulse that is transformed into a short-duration, high-current pulse while discharging through a semiconductor device. The ESD protection circuits are designed to provide a current path around the operational amplifier core to prevent damage. The energy absorbed by the protection circuitry is then dissipated as heat.

When an ESD voltage develops across two or more amplifier device pins, current flows through one or more steering diodes. Depending on the path that the current takes, the absorption device may activate. The absorption device has a trigger or threshold voltage that is greater than the normal operating voltage of the TLV2186, but less than the device breakdown voltage level. When this threshold is exceeded, the absorption device quickly activates and clamps the voltage across the supply rails to a safe level.

When the operational amplifier connects into a circuit, as shown in Figure 42, the ESD protection components are intended to remain inactive, and do not become involved in the application circuit operation. However, circumstances may arise where an applied voltage exceeds the operating voltage range of a given pin. If this condition occurs, there is a risk that some internal ESD protection circuits may be biased on, and conduct current. Any such current flow occurs through steering-diode paths and rarely involves the absorption device.

TLV2186 ai_equiv_esd_cir_bos830.gif
VIN = (V+) + 500 mV
TVS: 26 V > VTVSBR (min) > V+ ; where VTVSBR (min) is the minimum specified value for the transient voltage suppressor breakdown voltage.
Suggested value is approximately 5 kΩ in example overvoltage condition.
Figure 42. Equivalent Internal ESD Circuitry Relative to a Typical Circuit Application

Figure 42 shows a specific example where the input voltage (VIN) exceeds the positive supply voltage (V+) by 500 mV or more. Much of what happens in the circuit depends on the supply characteristics. If V+ can sink the current, one of the upper input steering diodes conducts and directs current to +VS. Excessively high current levels can flow with increasingly higher VIN. As a result, the data sheet specifications recommend that applications limit the input current to 10 mA.

If the supply is not capable of sinking the current, VIN may begin sourcing current to the operational amplifier, and then take over as the source of positive supply voltage. The danger in this case is that the voltage can rise to levels that exceed the operational amplifier absolute maximum ratings.

Another common question involves what happens to the amplifier if an input signal is applied to the input while the power supplies V+ or V– are at 0 V. Again, this question depends on the supply characteristic while at 0 V, or at a level below the input signal amplitude. If the supplies appear as high impedance, then the operational amplifier supply current may be supplied by the input source through the current-steering diodes. This state is not a normal bias condition; the amplifier most likely does not operate normally. If the supplies are low impedance, then the current through the steering diodes can become quite high. The current level depends on the ability of the input source to deliver current, and any resistance in the input path.

If there is any uncertainty about the ability of the supply to absorb this current, external zener diodes must be added to the supply pins, as shown in Figure 42. The zener voltage must be selected such that the diode does not turn on during normal operation. However, the zener voltage must be low enough so that the zener diode conducts if the supply pin begins to rise above the safe operating supply voltage level.