SLAS354C September 2001 – September 2015 TLV2553
PRODUCTION DATA.
- 1 Features
- 2 Applications
- 3 Description
- 4 Revision History
- 5 Pin Configuration and Functions
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6 Specifications
- 6.1 Absolute Maximum Ratings
- 6.2 ESD Ratings
- 6.3 Recommended Operating Conditions
- 6.4 Thermal Information
- 6.5 Electrical Characteristics
- 6.6 External Reference Specifications
- 6.7 Operating Characteristics
- 6.8 Timing Requirements: VREF+ = 5 V
- 6.9 Timing Requirements: VREF+ = 2.5 V
- 6.10 Typical Characteristics
- 7 Parameter Measurement Information
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8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagram
- 8.3 Feature Description
- 8.4
Device Functional Modes
- 8.4.1 Converter Operation
- 8.4.2 Data I/O Cycle
- 8.4.3 Sampling Cycle
- 8.4.4 Conversion Cycle
- 8.4.5 Power Up and Initialization
- 8.4.6 Data Input
- 8.4.7 Data Input—Address/Command Bits
- 8.4.8 Data Output Length
- 8.4.9 LSB Out First
- 8.4.10 Bipolar Output Format
- 8.4.11 EOC Output
- 8.4.12 Chip-Select Input (CS)
- 8.4.13 Power-Down Features
- 9 Application and Implementation
- 10Power Supply Recommendations
- 11Layout
- 12Device and Documentation Support
- 13Mechanical, Packaging, and Orderable Information
12 Device and Documentation Support
12.1 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.
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TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
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Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.
12.2 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
12.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.