SBOS262E December   2002  – December 2016 TLV3491 , TLV3492 , TLV3494

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information: TLV3491
    5. 7.5 Thermal Information: TLV3492
    6. 7.6 Thermal Information: TLV3494
    7. 7.7 Electrical Characteristics: VS = 1.8 V to 5.5 V
    8. 7.8 Switching Characteristics
    9. 7.9 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Operating Voltage
      2. 8.3.2 Input Overvoltage Protection
      3. 8.3.3 Setting Reference Voltage
      4. 8.3.4 External Hysteresis
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 TLV3491 Configured as an AC-Coupled Comparator
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Relaxation Oscillator
      3. 9.2.3 Power-On Reset
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
        1. 12.1.1.1 TINA-TI™ (Free Software Download)
        2. 12.1.1.2 DIP Adapter EVM
        3. 12.1.1.3 Universal Op Amp EVM
        4. 12.1.1.4 TI Precision Designs
        5. 12.1.1.5 WEBENCH Filter Designer
    2. 12.2 Related Links
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Voltage Supply 5.5 V
Signal input pin (V–) – 0.5 (V+) + 0.5 V
Current Signal input pin –10 10 mA
Output short circuit Continuous
Temperature Operating, TA –40 125 °C
Junction, TJ 150 °C
Storage, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±3000 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Supply voltage 1.8 5.5 V
TA Specified temperature –40 125 °C

7.4 Thermal Information: TLV3491

THERMAL METRIC(1) TLV3491 UNIT
DBV (SOT-23) D (SOIC)
5 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 237.8 201.9 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 108.7 92.5 °C/W
RθJB Junction-to-board thermal resistance 64.1 123.3 °C/W
ψJT Junction-to-top characterization parameter 12.1 23 °C/W
ψJB Junction-to-board characterization parameter 63.3 212.6 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance — — °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Thermal Information: TLV3492

THERMAL METRIC(1) TLV3492 UNIT
DCN (SOT-23) D (SOIC)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 135.4 201.9 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 68.1 92.5 °C/W
RθJB Junction-to-board thermal resistance 48.9 123.3 °C/W
ψJT Junction-to-top characterization parameter 9.9 23 °C/W
ψJB Junction-to-board characterization parameter 48.4 212.6 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance — — °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.6 Thermal Information: TLV3494

THERMAL METRIC(1) TLV3494 UNIT
D (SOIC) PW (TSSOP)
14 PINS 14 PINS
RθJA Junction-to-ambient thermal resistance 83.8 120.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 70.7 34.3 °C/W
RθJB Junction-to-board thermal resistance 59.5 62.8 °C/W
ψJT Junction-to-top characterization parameter 11.6 1 °C/W
ψJB Junction-to-board characterization parameter 37.7 56.5 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance — — °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.7 Electrical Characteristics: VS = 1.8 V to 5.5 V

at TA = 25°C and VS = 1.8 V to 5.5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OFFSET VOLTAGE
VOS Input offset voltage TA = 25°C, VCM = 0 V, IO = 0 V ±3 ±15 mV
dVOS/dT Input offset voltage versus temperature TA = –40°C to 125°C ±12 µV/°C
PSRR Input offset voltage versus power supply VS = 1.8 V to 5.5 V 350 1000 µV/V
INPUT BIAS CURRENT
IB Input bias current VCM = VCC/2 ±1 ±10 pA
IOS Input offset current VCM = VCC/2 ±1 ±10 pA
INPUT VOLTAGE
VCM Common-mode voltage (V–) – 0.2 V (V+) + 0.2 V V
CMRR Common-mode rejection ratio VCM = –0.2 V to (V+) – 1.5 V 60 74 dB
VCM = –0.2 V to (V+) + 0.2 V 54 62
INPUT CAPACITANCE
Common-mode 2 pF
Differential 4 pF
OUTPUT (VS = 5 V)
VOH Voltage output high from rail IOUT = 5 mA 90 200 mV
VOL Voltage output low from rail IOUT = 5 mA 160 200 mV
ISC Short-circuit current See Typical Characteristics
POWER SUPPLY
VS Specified voltage 1.8 5.5 V
Operating voltage 1.8 5.5 V
IQ Quiescent current(1) VO = 5 V, VO = high 0.85 1.2 µA
(1) IQ per channel

7.8 Switching Characteristics

at f = 10 kHz, VSTEP = 1 V, TA = 25°C, and VS = 1.8 V to 5.5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
t(PLH) Propagation delay time, low-to-high Input overdrive = 10 mV 12 µs
Input overdrive = 100 mV 6
t(PLH) Propagation delay time, high-to-low Input overdrive = 10 mV 13.5 µs
Input overdrive = 100 mV 6.5
tR Rise time CL = 10 pF 100 ns
tF Fall time CL = 10 pF 100 ns

7.9 Typical Characteristics

at TA = 25°C, VS = 1.8 V to 5.5 V, and input overdrive = 100 mV (unless otherwise noted)
TLV3491 TLV3492 TLV3494 tc_iq_temp_bos262.gif
Figure 1. Quiescent Current vs Temperature
TLV3491 TLV3492 TLV3494 tc_iq_output_switch_fqcy_bos262.gif
Figure 2. Quiescent Current vs Output Switching Frequency
TLV3491 TLV3492 TLV3494 tc_i-sc_vsupply_bos262.gif
Figure 3. Short-Circuit Current vs Supply Voltage
TLV3491 TLV3492 TLV3494 tc_output-low_iout_bos262.gif
Figure 5. Output Low vs Output Current
TLV3491 TLV3492 TLV3494 tc_tplh_cap-load_bos262.gif
Figure 7. Propagation Delay (tPLH) vs Capacitive Load
TLV3491 TLV3492 TLV3494 tc_tplh_input-od_bos262.gif
Figure 9. Propagation Delay (tPLH) vs Input Overdrive
TLV3491 TLV3492 TLV3494 tc_tplh_temp_bos262.gif
Figure 11. Propagation Delay (tPLH) vs Temperature
TLV3491 TLV3492 TLV3494 tc_tplh_v2.5_bos262.gif
Figure 13. Propagation Delay (tPLH)
TLV3491 TLV3492 TLV3494 tc_tplh_v0.9_bos262.gif
Figure 15. Propagation Delay (tPLH)
TLV3491 TLV3492 TLV3494 tc_i-input_bias_temp_bos262.gif
Figure 4. Input Bias Current vs Temperature
TLV3491 TLV3492 TLV3494 tc_output-high_iout_bos262.gif
Figure 6. Output High vs Output Current
TLV3491 TLV3492 TLV3494 tc_tphl_cap-load_bos262.gif
Figure 8. Propagation Delay (tPHL) vs Capacitive Load
TLV3491 TLV3492 TLV3494 tc_tphl_input-od_bos262.gif
Figure 10. Propagation Delay (tPHL) vs Input Overdrive
TLV3491 TLV3492 TLV3494 tc_tphl_temp_bos262.gif
Figure 12. Propagation Delay (tPHL) vs Temperature
TLV3491 TLV3492 TLV3494 tc_tphl_v2.5_bos262.gif
Figure 14. Propagation Delay (tPHL)
TLV3491 TLV3492 TLV3494 tc_tphl_v0.9_bos262.gif
Figure 16. Propagation Delay (tPHL)
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