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SBOS321E March 2005 – April 2016 TLV3501 , TLV3502

PRODUCTION DATA.

封装选项

机械数据 (封装 | 引脚)

D|8
- MSOI002K
DCN|8
- MPDS099C

散热焊盘机械数据 (封装 | 引脚)

DCN|8
- PPTD193B

订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
Voltage	Supply		5.5	V
Voltage	Signal input terminal⁽²⁾	(V−) − 0.3	(V+) + 0.3	V
Current	Signal input terminal⁽²⁾		10	mA
Current	Output short circuit⁽³⁾		74	mA
Temperature	Operating, T_A	–40	125	°C
	Junction, T_J		150	°C
	Storage, T_stg	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.3 V beyond the supply rails must be current-limited to 10 mA or less.

(3) Short-circuit to ground, one comparator per package.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±3000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted).

		MIN	NOM	MAX	UNIT
V_S	Supply voltage	2.2	2.7	5.5	V
V_IL	Low-level input voltage, SHDN (comparator is enabled)⁽¹⁾			(V+) – 1.7	V
V_IH	High-level input voltage, SHDN (comparator is disabled)⁽¹⁾	(V+) – 0.9			V
T_A	Operating temperature	–40		125	°C

(1) When the SHDN pin is within 0.9 V of the most positive supply, the part is disabled. When it is more than 1.7 V below the most positive supply, the part is enabled.

6.4 Thermal Information: TLV3501

THERMAL METRIC⁽¹⁾		TLV3501		UNIT
		DBV (SOT-23)	D (SOIC)
		6 PINS	8 PINS
R_θJA	Junction-to-ambient thermal resistance	192.2	129.5	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	134.8	75.9	°C/W
R_θJB	Junction-to-board thermal resistance	37.1	69.8	°C/W
ψ_JT	Junction-to-top characterization parameter	28.3	29.7	°C/W
ψ_JB	Junction-to-board characterization parameter	36.7	69.3	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	—	—	°C/W

6.5 Thermal Information: TLV3502

THERMAL METRIC⁽¹⁾		TLV3502		UNIT
		D (SOIC)	DCN (SOT-23)
		8 PINS	8 PINS
R_θJA	Junction-to-ambient thermal resistance	116.4	191.6	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	61.7	43.9	°C/W
R_θJB	Junction-to-board thermal resistance	57	120.3	°C/W
ψ_JT	Junction-to-top characterization parameter	18.5	14.4	°C/W
ψ_JB	Junction-to-board characterization parameter	56.5	118.6	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	—	—	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.6 Electrical Characteristics

At T_A = 25°C and V_S = 2.7 V to 5.5 V, unless otherwise noted.

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
OFFSET VOLTAGE
V_OS	Input offset voltage⁽¹⁾	V_CM = 0 V, I_O = 0 mA		±1	±6.5	mV
dV_OS/dT	Input offset voltage vs temperature	T_A = –40°C to +125°C		±5		μV/°C
PSRR	Input offset voltage vs power supply	V_S = 2.7 V to 5.5 V		100	400	μV/V
	Input hysteresis			6		mV
INPUT BIAS CURRENT
I_B	Input bias current⁽²⁾	V_CM = V_CC/2		±2	±10	pA
I_OS	Input offset current⁽²⁾⁽³⁾	V_CM = V_CC/2		±2	±10	pA
INPUT VOLTAGE RANGE
V_CM	Common-mode voltage range		(V−) − 0.2		(V+) − 0.2	V
CMRR	Common-mode rejection ratio	V_CM = −0.2 V to (V+) + 0.2 V	57	70		dB
CMRR	Common-mode rejection ratio	V_CM = −0.2 V to (V+) + 0.2 V, T_A = −40°C to +125°C	55			dB
INPUT IMPEDANCE
	Common-mode			10¹³ \|\| 2		Ω \|\| pF
	Differential			10¹³ \|\| 4		Ω \|\| pF
OUTPUT
V_OH, V_OL	Voltage output swing from rail	I_OUT = ±1 mA		30	50	mV
SHUTDOWN
t_OFF	Shutdown turnoff time			30		ns
t_ON	Shutdown turnon time			100		ns
V_L	SHDN low threshold	Comparator is enabled⁽⁴⁾			(V+) − 1.7	V
V_H	SHDN high threshold	Comparator is disabled⁽⁴⁾	(V+) − 0.9			V
	Input bias current of shutdown pin			2		pA
I_QSD	Quiescent current in shutdown			2		µA
POWER SUPPLY
V_S	Specified voltage		2.7		5.5	V
	Operating voltage range	Higher end		2.2		V
	Operating voltage range	Lower end		5.5		V
I_Q	Quiescent current	V_S = 5 V, V_O = High		3.2	5	mA
TEMPERATURE RANGE
	Specified range		–40		125	°C
	Operating range		–40		125	°C

(1) V_OS is defined as the average of the positive and the negative switching thresholds.

(2) Not production tested.

(3) The difference between I_B₊ and I_B_–.

(4) When the shutdown pin is within 0.9 V of the most positive supply, the part is disabled. When it is more than 1.7 V below the most positive supply, the part is enabled.

6.7 Switching Characteristics

At T_A = 25°C and V_S = 2.7 V to 5.5 V, unless otherwise noted.

PARAMETER		TEST CONDITIONS		TYP	MAX	UNIT
T_(pd)	Propagation delay time⁽¹⁾⁽²⁾	ΔV_IN = 100 mV, Overdrive = 20 mV	At T_A = 25°C	4.5	6.4	ns
		ΔV_IN = 100 mV, Overdrive = 20 mV	At T_A = −40°C to +125°C		7	ns
		ΔV_IN = 100 mV, Overdrive = 5 mV	At T_A = 25°C	7.5	10	ns
		ΔV_IN = 100 mV, Overdrive = 5 mV	At T_A = −40°C to +125°C		12	ns
Δt_(SKEW)	Propagation delay skew⁽³⁾	ΔV_IN = 100 mV, overdrive = 20 mV		0.5		ns
f_MAX	Maximum toggle frequency	Overdrive = 50 mV, V_S = 5 V		80		MHz
t_R	Rise time⁽⁴⁾			1.5		ns
t_F	Fall time⁽⁴⁾			1.5		ns

(1) Not production tested.

(2) Propagation delay cannot be accurately measured with low overdrive on automatic test equipment. This parameter is ensured by characterization and testing at 100-mV overdrive.

(3) The difference between the propagation delay going high and the propagation delay going low.

(4) Measured between 10% of V_S and 90% of V_S.