米6体育平台手机版

SLCS137D November 2000 – May 2017 TLV3701 , TLV3702 , TLV3704

PRODUCTION DATA.

封装选项

机械数据 (封装 | 引脚)

N|14
- MPDI002C
PW|14
- MPDS360A
D|14
- MPDS177H

散热焊盘机械数据 (封装 | 引脚)

订购信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

	MIN	MAX	UNIT
Supply voltage, V_CC⁽²⁾		17	V
Differential input voltage, V_ID		±20	V
Input voltage, V_I⁽²⁾⁽³⁾	0	V_CC + 5	V
Input current, I_I		±10	mA
Output current, I_O		±10	mA
Continuous total power dissipation	See Dissipation Ratings
Maximum junction temperature, T_J		150	°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds		260	°C
Storage temperature, T_stg	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values, except differential voltages, are with respect to GND.

(3) Input voltage range is limited to 20 V maximum or V_CC + 5 V, whichever is smaller.

7.2 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

			MIN	MAX	UNIT
Supply voltage, V_CC	Single supply	C-suffix	2.5	16	V
	Single supply	I-suffix	2.7	16
	Split supply	C-suffix	±1.25	±8
	Split supply	I-suffix	±1.35	±8
Common-mode input voltage, V_ICR			–0.1	V_CC + 5	V
Operating free-air temperature, T_A	C-suffix		0	70	°C
Operating free-air temperature, T_A	I-suffix		–40	125	°C

7.3 Thermal Information – TLV3701

THERMAL METRIC⁽¹⁾		TLV3701			UNIT
		DBV (SOT-23)	D (SOIC)	P (PDIP)
		5 PINS	8 PINS
R_θJA	Junction-to-ambient thermal resistance	193.6	124.8	82.8	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	102.4	69.1	84.8	°C/W
R_θJB	Junction-to-board thermal resistance	54.3	67.9	59.7	°C/W
ψ_JT	Junction-to-top characterization parameter	16.9	22.3	45.3	°C/W
ψ_JB	Junction-to-board characterization parameter	53.6	67.2	59.5	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	—	—	—	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.4 Thermal Information – TLV3702

THERMAL METRIC⁽¹⁾		TLV3702			UNIT
		D (SOIC)	DGK (VSSOP)	P (PDIP)
		8 PINS
R_θJA	Junction-to-ambient thermal resistance	116.7	163.9	77.1	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	59.4	65.7	79	°C/W
R_θJB	Junction-to-board thermal resistance	60.2	85.3	54	°C/W
ψ_JT	Junction-to-top characterization parameter	14.6	9	39.5	°C/W
ψ_JB	Junction-to-board characterization parameter	59.5	83.9	53.7	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	—	—	—	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Thermal Information – TLV3704

THERMAL METRIC⁽¹⁾		TLV3704			UNIT
		D (SOIC)	N (PDIP)	PW (TSSOP)
		14 PINS
R_θJA	Junction-to-ambient thermal resistance	81.4	58.1	105.7	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	38.1	50.9	33.9	°C/W
R_θJB	Junction-to-board thermal resistance	37.8	38	49.5	°C/W
ψ_JT	Junction-to-top characterization parameter	7.5	23.6	2.5	°C/W
ψ_JB	Junction-to-board characterization parameter	37.4	37.7	48.8	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	—	—	—	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.6 Electrical Characteristics

At specified operating free-air temperature range, V_CC = 2.7 V, 5 V, 15 V (unless otherwise noted).

PARAMETER		TEST CONDITIONS		T_A⁽¹⁾	MIN	TYP	MAX	UNIT
DC PERFORMANCE
V_IO	Input offset voltage	V_IC = V_CC/2, R_S = 50 Ω		25°C		250	5000	µV
V_IO	Input offset voltage	V_IC = V_CC/2, R_S = 50 Ω		Full range			7000	µV
α_VIO	Offset voltage drift	V_IC = V_CC/2, R_S = 50 Ω		25°C		3		µV/°C
CMRR	Common-mode rejection ratio	V_IC = 0 to 2.7 V, R_S = 50 Ω		25°C	55	72		dB
		V_IC = 0 to 2.7 V, R_S = 50 Ω		Full range	50
		V_IC = 0 to 5 V, R_S = 50 Ω		25°C	60	76
		V_IC = 0 to 5 V, R_S = 50 Ω		Full range	55
		V_IC = 0 to 15 V, R_S = 50 Ω		25°C	65	88
		V_IC = 0 to 15 V, R_S = 50 Ω		Full range	60
A_VD	Large-signal differential voltage amplification			25°C		1000		V/mV
INPUT/OUTPUT CHARACTERISTICS
I_IO	Input offset current	V_IC = V_CC/2, R_S = 50 Ω		25°C		20	100	pA
I_IO	Input offset current	V_IC = V_CC/2, R_S = 50 Ω		Full range			1000	pA
I_IB	Input bias current	V_IC = V_CC/2, R_S = 50 Ω		25°C		80	250	pA
I_IB	Input bias current	V_IC = V_CC/2, R_S = 50 Ω		Full range			1500	pA
r_i(d)	Differential input resistance			25°C		300		MΩ
V_OH	High-level output voltage	V_IC = V_CC/2, I_OH = 2 μA, V_ID = 1 V		25°C		V_CC – 80		mV
		V_IC = V_CC/2, I_OH = – 50 μA, V_ID = 1 V		25°C	V_CC – 320
		V_IC = V_CC/2, I_OH = – 50 μA, V_ID = 1 V		Full range	V_CC – 450
V_OL	Low-level output voltage	V_IC = V_CC/2, I_OH = 2 μA, V_ID = – 1 V		25°C		8		mV
		V_IC = V_CC/2, I_OH = 50 μA, V_ID = – 1 V		25°C		80	200
		V_IC = V_CC/2, I_OH = 50 μA, V_ID = – 1 V		Full range			300
POWER SUPPLY
I_CC	Supply current (per channel)	Output state high		25°C		560	800	nA
I_CC	Supply current (per channel)	Output state high		Full range			1000	nA
PSRR	Power supply rejection ratio	V_IC = V_CC/2 V, No load	V_CC = 2.7 V to 5 V	25°C	75	100		dB
			V_CC = 2.7 V to 5 V	Full range	70
			V_CC = 5 V to 15 V	25°C	85	105
			V_CC = 5 V to 15 V	Full range	80

(1) Full range is 0°C to 70°C for C suffix and –40°C to 125°C for I suffix. If not specified, full range is –40°C to 125°C.

7.7 Switching Characteristics

At specified operating free-air temperature range, V_CC = 2.7 V, 5 V, 15 V (unless otherwise noted).

PARAMETER		TEST CONDITIONS		TYP	MAX	UNIT
t_(PLH)	Propagation response time, low-to-high-level output⁽¹⁾	f = 10 kHz, V_STEP = 100 mV, C_L = 10 pF, V_CC = 2.7 V	Overdrive = 2 mV	240		µs
			Overdrive = 10 mV	64
			Overdrive = 50 mV	36
t_(PHL)	Propagation response time, high-to-low-level output⁽¹⁾	f = 10 kHz, V_STEP = 100 mV, C_L = 10 pF, V_CC = 2.7 V	Overdrive = 2 mV	167		µs
			Overdrive = 10 mV	67
			Overdrive = 50 mV	37
t_r	Rise time	C_L = 10 pF, V_CC = 2.7 V		7		µs
t_f	Fall time	C_L = 10 pF, V_CC = 2.7 V		9		µs
t_su	Start-up time (TLV3701 Only)	V_CC = 2.7 to 15V⁽²⁾	25°C	7	15	ms
t_su	Start-up time (TLV3701 Only)	V_CC = 2.7 to 15V⁽²⁾	Full range	14	30	ms

(1) The response time specified is the interval between the input step function and the instant when the output crosses 1.4 V. Propagation responses are longer at higher supply voltages, refer to Figures 12 – 17 for further details.

(2) The definition of start-up time is the time period between the supply voltage reaching minimum supply (V_CCmin) and the device IQ activating (I_CCmin) with a valid device output voltage. Single device only.

7.8 Dissipation Ratings

PACKAGE	θ_JC(°C/W)	θ_JA (°C/W)	T_A ≤ 25°C POWER RATING	T_A = 125°C POWER RATING
D (8)	69.1	124.8	1001 mW	200 mW
D (14)	38.1	81.4	1536 mW	307 mW
DBV (5)	102.4	193.6	646 mW	129 mW
DGK (8)	65.7	163.9	763 mW	153 mW
N (14)	50.9	58.1	2151 mW	430 mW
P (8)	84.8	82.8	1510 mW	302 mW
PW (14)	33.9	105.7	1183 mW	237 mW

7.9 Typical Characteristics

At specified operating conditions (unless otherwise noted).

Table 5. Table of Graphs

			FIGURE
	Input bias/offset current	vs Free-air temperature	Figure 2
V_OL	Low-level output voltage	vs Low-level output current	Figure 6, Figure 8, Figure 4
V_OH	High-level output voltage	vs High-level output current	Figure 3, Figure 5, Figure 7
I_CC	Supply current	vs Supply voltage	Figure 1
I_CC	Supply current	Free-air temperature	Figure 9
	Output fall time/rise time	vs Supply voltage	Figure 10
	Low-to-high level output response for various input overdrives		Figure 11, Figure 13, Figure 15
	High-to-low level output response for various input overdrives		Figure 12, Figure 14, Figure 16