ZHCSHT8Y July   1996  – March 2024 TLV431 , TLV431A , TLV431B

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics for TLV431
    6. 5.6 Electrical Characteristics for TLV431A
    7. 5.7 Electrical Characteristics for TLV431B
    8. 5.8 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
      1. 7.4.1 Open Loop (Comparator)
      2. 7.4.2 Closed Loop
  9. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Comparator with Integrated Reference (Open Loop)
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Basic Operation
          2. 8.2.1.2.2 Overdrive
          3. 8.2.1.2.3 Output Voltage and Logic Input Level
            1. 8.2.1.2.3.1 Input Resistance
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Shunt Regulator/Reference
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
          1. 8.2.2.2.1 Programming Output/Cathode Voltage
          2. 8.2.2.2.2 Total Accuracy
          3. 8.2.2.2.3 Stability
        3. 8.2.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 接收文档更新通知
    3. 9.3 支持资源
    4. 9.4 Trademarks
    5. 9.5 静电放电警告
    6. 9.6 术语表
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DBZ|3
  • DBV|5
  • PK|3
  • LP|3
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.4.1 Layout Guidelines

Place decoupling capacitors as close to the device as possible. Use appropriate widths for traces when shunting high currents to avoid excessive voltage drops.
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