ZHCSFW1 November 2016 TLV2314-Q1 , TLV314-Q1 , TLV4314-Q1
PRODUCTION DATA.
参数 | 测试条件 | 最小值 | 典型值 | 最大值 | 单位 | ||
---|---|---|---|---|---|---|---|
失调电压 | |||||||
VOS | 输入失调电压 | VCM = (VS+) – 1.3V,TA = 25°C | ±0.75 | ±3 | mV | ||
dVOS/dT | VOS 温漂 | TA = –40°C 至 +125°C | 2 | μV/°C | |||
PSRR | 电源抑制比 | VCM = (VS+) – 1.3V,TA = 25°C | ±30 | ±135 | µV/V | ||
通道分离,直流 | 直流时,TA = 25°C | 100 | dB | ||||
输入电压范围 | |||||||
VCM | 共模电压范围 | TA = 25°C | (V-)-0.2 | (V+)+0.2 | V | ||
CMRR | 共模抑制比 | VS = 5.5V,(VS–) – 0.2V < VCM < (VS+) – 1.3V,
TA = 25°C |
72 | 96 | dB | ||
VS=5.5V,VCM=–0.2V 至 5.7V(2),TA = 25°C | 75 | ||||||
输入偏置电流 | |||||||
IB | 输入偏置电流 | TA = 25°C | ±1.0 | pA | |||
IOS | 输入失调电流 | TA = 25°C | ±1.0 | pA | |||
噪声 | |||||||
输入电压噪声(峰峰值) | ƒ = 0.1Hz 至 10Hz,TA = 25°C | 5 | μVPP | ||||
en | 输入电压噪声密度 | ƒ = 10kHz,TA = 25°C | 15 | nV/√Hz | |||
ƒ = 1kHz,TA = 25°C | 16 | ||||||
in | 输入电流噪声密度 | ƒ = 1kHz,TA = 25°C | 6 | fA/√Hz | |||
输入电容 | |||||||
CIN | 输入电容 | 差动 | VS = 5V,TA = 25°C | 1 | pF | ||
共模 | VS = 5V,TA = 25°C | 5 | |||||
开环增益 | |||||||
AOL | 开环电压增益 | VS = 1.8V 至 5.5V,0.2V < VO < (V+) – 0.2V,
RL = 10kΩ,TA = 25°C |
85 | 115 | dB | ||
VS = 1.8V 至 5.5V,0.5V < VO < (V+) – 0.5V,
RL = 2kΩ(2),TA = 25°C |
85 | 100 | |||||
相补角 | VS = 5V,G = 1,RL = 10kΩ,TA = 25°C | 65 | ° | ||||
频率响应 | |||||||
GBW | 增益带宽积 | VS = 1.8V,RL = 10kΩ,CL = 10pF,TA = 25°C | 2.7 | MHz | |||
VS = 5V,RL = 10kΩ,CL = 10pF,TA = 25°C | 3 | ||||||
SR | 压摆率(3) | VS = 5V,G = 1,TA = 25°C | 1.5 | V/μs | |||
tS | 建立时间 | 至 0.1%,VS = 5V,2V 步进,G = 1,TA = 25°C | 3 | μs | |||
过载恢复时间 | VS = 5V,VIN × 增益 > VS,TA = 25°C | 8 | μs | ||||
THD+N | 总谐波失真 + 噪声(4) | VS = 5V,VO = 1VRMS,G = 1,f = 1kHz,
RL = 10kΩ,TA = 25°C |
0.005% | ||||
输出 | |||||||
VO | 相对于电源轨的电压输出摆幅 | VS = 1.8V 至 5.5V,RL = 10kΩ,TA = 25°C | 5 | 25 | mV | ||
VS = 1.8V 至 5.5V,RL = 2kΩ,TA = 25°C | 22 | 45 | |||||
ISC | 短路电流 | VS = 5V,TA = 25°C | ±20 | mA | |||
RO | 开环输出阻抗 | VS = 5.5V,ƒ = 100Hz,TA = 25°C | 570 | Ω | |||
电源 | |||||||
VS | 额定电压范围 | 1.8 | 5.5 | V | |||
IQ | 每个放大器的静态电流,过热 | VS = 5V,IO = 0mA,TA = –40°C 至 +125°C | 150 | 250 | µA | ||
温度 | |||||||
额定温度范围 | –40 | 125 | °C | ||||
Tstg | 贮存温度 | –65 | 150 | °C |