米6体育平台手机版

ZHCSE67B October 2015 – July 2018 TLV62085

PRODUCTION DATA.

T_J = 25 °C, and V_IN = 3.6 V, unless otherwise noted.

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY
I_Q	Quiescent current into VIN	No load, device not switching		17		µA
I_SD	Shutdown current into VIN	EN = Low		0.7		µA
V_UVLO	Under voltage lock out threshold	V_IN falling	2.1	2.2	2.3	V
V_UVLO	Under voltage lock out hysteresis	V_IN rising		200		mV
T_JSD	Thermal shutdown threshold	T_J rising		150		°C
T_JSD	Thermal shutdown hysteresis	T_J falling		20		°C
LOGIC INTERFACE EN
V_IH	High-level input voltage	V_IN = 2.5 V to 6.0 V	1.0			V
V_IL	Low-level input voltage	V_IN = 2.5 V to 6.0 V			0.4	V
I_EN,LKG	Input leakage current into EN pin	EN = High		0.01		µA
R_PD	Pull-down resistance at EN pin	EN = Low		400		kΩ
SOFT START, POWER GOOD
t_SS	Soft start time	Time from EN high to 95% of V_OUT nominal		0.8		ms
V_PG	Power good threshold	V_OUT rising, referenced to V_OUT nominal		95%
V_PG	Power good threshold	V_OUT falling, referenced to V_OUT nominal		90%
V_PG,OL	Low-level output voltage	I_sink = 1 mA			0.4	V
I_PG,LKG	Input leakage current into PG pin	V_PG = 5.0 V		0.01		µA
OUTPUT
V_FB	Feedback regulation voltage	PWM mode, 2.5 V ≤ VIN ≤ 6 V T_J = 0°C to 85 °C	792	800	808	mV
I_FB,LKG	Feedback input leakage current	V_FB = 1 V		0.01		µA
R_DIS	Output discharge resistor	EN = LOW, V_OUT = 1.8 V		260		Ω
POWER SWITCH
R_DS(on)	High-side FET on-resistance	I_SW = 500 mA		31		mΩ
R_DS(on)	Low-side FET on-resistance	I_SW = 500 mA		23		mΩ
I_LIM	High-side FET switch current limit		3.7	4.6	5.5	A
f_SW	PWM switching frequency	I_OUT= 1 A		2.4		MHz