ZHCSGK2F November   2019  – November 2019 TLV62585

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     Device Images
      1.      典型应用原理图
      2.      5V 输入电压效率
  4. 修订历史记录
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Power Save Mode
      2. 7.3.2 100% Duty Cycle Low Dropout Operation
      3. 7.3.3 Soft Start
      4. 7.3.4 Switch Current Limit and Short Circuit Protection (HICCUP)
      5. 7.3.5 Undervoltage Lockout
      6. 7.3.6 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Enable and Disable
      2. 7.4.2 Power Good
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Custom Design With WEBENCH® Tools
        2. 8.2.2.2 Setting The Output Voltage
        3. 8.2.2.3 Output Filter Design
        4. 8.2.2.4 Inductor Selection
        5. 8.2.2.5 Input and Output Capacitor Selection
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 第三方米6体育平台手机版_好二三四免责声明
      2. 11.1.2 使用 WEBENCH® 工具创建定制设计方案
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 接收文档更新通知
    4. 11.4 支持资源
    5. 11.5 商标
    6. 11.6 静电放电警告
    7. 11.7 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Electrical Characteristics

TJ = 25 °C, and VIN = 5 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
IQ Quiescent current into VIN No load, device not switching 35 µA
ISD Shutdown current into VIN EN = Low 0.7 2 µA
VUVLO Under voltage lock out threshold VIN falling 2.3 2.45 V
Under voltage lock out hysteresis 150 mV
TJSD Thermal shutdown threshold TJ rising 150 °C
Thermal shutdown hysteresis 20 °C
LOGIC INTERFACE EN
VIH High-level input voltage VIN = 2.5 V to 5.5 V 1.2 V
VIL Low-level input voltage VIN = 2.5 V to 5.5 V 0.4 V
SOFT START, POWER GOOD
tSS Soft start time Time from EN high to 95% of VOUT nominal 900 µs
VPG Power good threshold VOUT rising, referenced to VOUT nominal 95%
VOUT falling, referenced to VOUT nominal 90%
VPG,OL Low-level output voltage Isink = 1 mA 0.4 V
IPG,LKG Input leakage current into PG pin VPG = 5.0 V 0.01 µA
tPG,DLY Power good delay VFB falling 40 µs
OUTPUT
VFB Feedback regulation voltage PWM mode, 2.5 V ≤ VIN ≤ 5.5 V, 0°C to 85°C 594 600 606 mV
PWM mode, 2.5 V ≤ VIN ≤ 5.5 V, -40°C to 125°C 588 600 612
IFB,LKG Feedback input leakage current VFB = 0.6 V 0.01 µA
RDIS Output discharge FET on-resistance EN = Low, VOUT = 1.8 V 10
POWER SWITCH
RDS(on) High-side FET on-resistance 56 mΩ
Low-side FET on-resistance 32 mΩ
ILIM High-side FET switch current limit 4 4.6 A
fSW PWM switching frequency VOUT = 1.8V, IOUT = 1 A 1.5 MHz