ZHCSMR6 november   2020 TLV6700-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Device Comparison Table
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Switching Characteristics
    8. 7.8 Timing Diagrams
    9. 7.9 Typical Characteristics
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Inputs (INA+, INB–)
      2. 8.3.2 Outputs (OUTA, OUTB)
      3. 8.3.3 Window Comparator
      4. 8.3.4 Immunity to Input Terminal Voltage Transients
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Operation (VDD > UVLO)
      2. 8.4.2 Undervoltage Lockout (V(POR) < VDD < UVLO)
      3. 8.4.3 Power-On Reset (VDD < V(POR))
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 VPULLUP to a Voltage Other Than VDD
      2. 9.1.2 Monitoring VDD
      3. 9.1.3 Monitoring a Voltage Other Than VDD
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Resistor Divider Selection
        2. 9.2.2.2 Pullup Resistor Selection
        3. 9.2.2.3 Input Supply Capacitor
        4. 9.2.2.4 Input Capacitors
      3. 9.2.3 Application Curves
    3. 9.3 Do's and Don'ts
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  13. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 静电放电警告
    6. 12.6 术语表
  14. 13Mechanical, Packaging, and Orderable Information

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7.7 Switching Characteristics

Over operating temperature range (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
trOutput rise timeVDD = 5 V, 10-mV input overdrive,
RP = 10 kΩ, VO = (0.1 to 0.9) × VDD		2.2µs
tfOutput fall timeVDD = 5 V, 10-mV input overdrive,
RP = 10 kΩ, VO = (0.1 to 0.9) × VDD		0.22µs
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