ZHCSI89D November   2017  – September 2024 TLV755P

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Undervoltage Lockout (UVLO)
      2. 6.3.2 Enable (EN)
      3. 6.3.3 Internal Foldback Current Limit
      4. 6.3.4 Thermal Shutdown
    4. 6.4 Device Functional Modes
      1. 6.4.1 Normal Operation
      2. 6.4.2 Dropout Operation
      3. 6.4.3 Disabled
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Input and Output Capacitor Selection
      2. 7.1.2 Dropout Voltage
      3. 7.1.3 Exiting Dropout
      4. 7.1.4 Reverse Current
      5. 7.1.5 Power Dissipation (PD)
        1. 7.1.5.1 Estimating Junction Temperature
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Input Current
        2. 7.2.2.2 Thermal Dissipation
      3. 7.2.3 Application Curve
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Examples
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Device Nomenclature
    2. 8.2 接收文档更新通知
    3. 8.3 支持资源
    4. 8.4 Trademarks
    5. 8.5 静电放电警告
    6. 8.6 术语表
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DYD|5
  • DBV|5
  • DQN|4
  • DRV|6
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.3.2 Enable (EN)

The enable pin (EN) is active high. Enable the device by forcing the EN pin to exceed VHI. Turn off the device by forcing the EN pin below VLO. If shutdown capability is not required, connect EN to IN.

The device has an internal pulldown that connects a 120Ω resistor to ground when the device is disabled. The discharge time after disabling depends on the output capacitance (COUT) and the load resistance (RL) in parallel with the 120Ω pulldown resistor. Equation 1 calculates the time constant τ:

Equation 1. TLV755P

The EN pin is independent of the input pin (IN), but if the EN pin is driven to a higher voltage than VIN, the current into the EN pin increases. This effect is illustrated in Figure 5-23. When the EN voltage is higher than the input voltage there is an increased current flow into the EN pin. If this increased flow causes problems in the application, sequence the EN pin after VIN is high, or to tie EN to VIN to prevent this flow increase from happening. If EN is driven to a higher voltage than VIN, limit the frequency on EN to below 10kHz.
千亿体育app官网登录(中国)官方网站IOS/安卓通用版/手机APP | 米乐app下载官网（中国）|ios|Android/通用版APP最新版 | 米乐|米乐·M6（中国大陆）官方网站 | 千亿体育登陆地址 | 华体会体育（中国）HTH·官方网站 | 千赢qy国际_全站最新版千赢qy国际V6.2.14安卓/IOS下载 | 18新利网v1.2.5|中国官方网站 | bob电竞真人（中国官网）安卓/ios苹果/电脑版【1.97.95版下载】 | 千亿体育app官方下载(中国)官方网站IOS/安卓/手机APP下载安装 |