米6体育平台手机版

ZHCSUZ6B February 2024 – May 2024 TLV9051-Q1 , TLV9052-Q1

PRODMIX

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请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)

DBV|5

散热焊盘机械数据 (封装 | 引脚)

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7.2.2 Detailed Design Procedure

The transfer function of the circuit in Figure 7-1 is given in Equation 1.

Equation 1.

V_{O U T} = I_{L O A D} \times R_{S H U N T} \times G a i n

The load current (I_LOAD) produces a voltage drop across the shunt resistor (R_SHUNT). The load current is set from 0A to 1A. To keep the shunt voltage below 100mV at maximum load current, the largest shunt resistor is defined using Equation 2.

Equation 2.

R_{S H U N T} = \frac{V_{S H U N T_M A X}}{I_{L O A D_M A X}} = \frac{100 m V}{1 A} = 100 m Ω

Using Equation 2, R_SHUNT equals 100mΩ. The voltage drop produced by I_LOAD and R_SHUNT is amplified by the TLV905x-Q1 device to produce an output voltage of approximately 0V to 4.95V. Equation 3 calculates the gain required for the TLV905x-Q1 device to produce the required output voltage.

Equation 3.

G a i n = \frac{{(V}_{O U T_M A X} - V_{O U T_{M I N}})}{(V_{I N_M A X} - V_{I N_M I N})}

Using Equation 3, the required gain equals 49.5V/V, which is set with the R_F and R_G resistors. Equation 4 sizes the R_F and R_G, resistors to set the gain of the TLV905x-Q1 device to 49.5V/V.

Equation 4.

G a i n = 1 + \frac{(R_{F})}{(R_{G})}

Selecting R_F to equal 165kΩ and R_G to equal 3.4kΩ provides a combination that equals approximately 49.5V/V. Figure 7-2 shows the measured transfer function of the circuit shown in Figure 7-1.