ZHCSP76 November   2021 TMAG5124-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Device Comparison
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Magnetic Characteristics
    7. 7.7 Typical Characteristics
      1. 7.7.1 TMAG5124A and TMAG5124E
      2. 7.7.2 TMAG5124B and TMAG5124F
      3. 7.7.3 TMAG5124C and TMAG5124G
      4. 7.7.4 TMAG5124D and TMAG5124H
      5. 7.7.5 Current Output Level
        1. 7.7.5.1 Low-Level Current Output for TMAG5124A/B/C/D
        2. 7.7.5.2 Low-Level Current Output for TMAG5124E/F/G/H
        3. 7.7.5.3 High-Level Current Output for Every Version
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Field Direction Definition
      2. 8.3.2 Device Output
      3. 8.3.3 Protection Circuits
        1. 8.3.3.1 Load Dump Protection
        2. 8.3.3.2 Reverse Polarity Protection
      4. 8.3.4 Power-On Time
      5. 8.3.5 Hall Element Location
      6. 8.3.6 Propagation Delay
      7. 8.3.7 Chopper Stabilization
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 High-Side and Low-Side Typical Application Diagrams
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
  11. 10Power Supply Recommendations
    1. 10.1 Power Derating
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  13. 12Device and Documentation Support
    1. 12.1 Documentation Support
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 静电放电警告
    6. 12.6 术语表
  14. 13Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge
Human-body model (HBM), per AEC Q100-002(1)
HBM ESD classification level 2		 ±2000 V

Charged-device model (CDM), per AEC Q100-011
CDM ESD Classification level C4A		 ±500
(1)
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
千亿体育app官网登录(中国)官方网站IOS/安卓通用版/手机APP | 米乐app下载官网（中国）|ios|Android/通用版APP最新版 | 米乐|米乐·M6（中国大陆）官方网站 | 千亿体育登陆地址 | 华体会体育（中国）HTH·官方网站 | 千赢qy国际_全站最新版千赢qy国际V6.2.14安卓/IOS下载 | 18新利网v1.2.5|中国官方网站 | bob电竞真人（中国官网）安卓/ios苹果/电脑版【1.97.95版下载】 | 千亿体育app官方下载(中国)官方网站IOS/安卓/手机APP下载安装 |