ZHCSE86A October   2015  – October 2015 TMP107-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 说明（继续）
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Digital Temperature Output
      2. 8.3.2 Temperature Limits and Alert
        1. 8.3.2.1 ALERT1, ALERT2, R1, and R2 Pins
      3. 8.3.3 SMAART Wire Communication Interface
        1. 8.3.3.1 Communication Protocol
          1. 8.3.3.1.1 Calibration Phase
          2. 8.3.3.1.2 Command and Address Phase
            1. 8.3.3.1.2.1 Global or Individual (G/nI) Bit
            2. 8.3.3.1.2.2 Read/Write (R/nW) Bit
            3. 8.3.3.1.2.3 Command or Address (C/nA) Bit:
          3. 8.3.3.1.3 Register Pointer Phase
          4. 8.3.3.1.4 Data Phase
        2. 8.3.3.2 SMAART Wire Operations
          1. 8.3.3.2.1 Command Operations
            1. 8.3.3.2.1.1 Address Initialize
            2. 8.3.3.2.1.2 Last Device Poll
            3. 8.3.3.2.1.3 Global Software Reset
          2. 8.3.3.2.2 Address Operations
            1. 8.3.3.2.2.1 Individual Write
            2. 8.3.3.2.2.2 Individual Read
            3. 8.3.3.2.2.3 Global Write
            4. 8.3.3.2.2.4 Global Read
    4. 8.4 Device Functional Modes
      1. 8.4.1 Continuous-Conversion Mode
      2. 8.4.2 Shutdown Mode
      3. 8.4.3 One-Shot Mode
    5. 8.5 Programming
      1. 8.5.1 EEPROM
      2. 8.5.2 EEPROM Operations
        1. 8.5.2.1 EEPROM Unlock
        2. 8.5.2.2 EEPROM Lock
        3. 8.5.2.3 EEPROM Programming
        4. 8.5.2.4 EEPROM Acquire or Read
    6. 8.6 Register Map
      1. 8.6.1 Temperature Register (address = 0h) [reset = 0h]
      2. 8.6.2 Configuration Register (address = 1h) [reset = A000h]
      3. 8.6.3 High Limit 1 Register (address = 2h) [reset = 7FFCh]
      4. 8.6.4 Low Limit 1 Register (address = 3h) [reset = 8000h]
      5. 8.6.5 High Limit 2 Register (address = 4h) [reset = 7FFCh]
      6. 8.6.6 Low Limit 2 Register (address = 5h) [reset = 8000h]
      7. 8.6.7 EEPROM n Register (where n = 1 to 8) (addresses = 6h to Dh) [reset = 0h]
      8. 8.6.8 Die ID Register (address = Fh) [reset = 1107h]
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Connecting Multiple Devices
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Voltage Drop Effect
          2. 9.2.1.2.2 EEPROM Programming Current
          3. 9.2.1.2.3 Power Savings
          4. 9.2.1.2.4 Accuracy
          5. 9.2.1.2.5 Electromagnetic Interference (EMI)
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Connecting ALERT1 and ALERT2 Pins
      3. 9.2.3 ALERT1 and ALERT2 Pins Used as General-Purpose Output (GPO)
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 文档支持
      1. 12.1.1 相关文档　
    2. 12.2 社区资源
    3. 12.3 商标
    4. 12.4 静电放电警告
    5. 12.5 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Supply voltage, V+ 6 V
Input voltage I/O1, I/O2 –0.3 (V+) + 0.3 V
R1, R2 –0.3 6
ALERT1, ALERT2 –0.3 6
Sink current ALERT1, ALERT2 10 mA
Temperature Operating junction –55 150 °C
Storage, Tstg –60 150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V
Charged-device model (CDM), per AEC Q100-011 ±1000
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Supply voltage, V+ 1.7 3.3 5.5 V
Operating free-air temperature, TA –55 125 °C

7.4 Thermal Information

THERMAL METRIC(1) TMP107-Q1 UNIT
D (SOIC)
8 PINS
RθJA Junction-to-ambient thermal resistance 116.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 62.5 °C/W
RθJB Junction-to-board thermal resistance 56.6 °C/W
ψJT Junction-to-top characterization parameter 14.6 °C/W
ψJB Junction-to-board characterization parameter 56.0 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

At TA = –55°C to 125°C and V+ = +1.7 V to +5.5 V (unless otherwise noted). Typical values at TA = 25°C and V+ = 3.3 V.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TEMPERATURE INPUT
Temperature range –55 125 °C
Temperature resolution 0.015625 °C
Temperature accuracy (error) –20°C to +70°C; one-shot mode, bus inactive ±0.125 ±0.4 °C
–40°C to +100°C; one-shot mode, bus inactive ±0.125 ±0.55
–55°C to +125°C; one-shot mode, bus inactive ±0.5 ±0.7
ADC resolution 14 Bits
DIGITAL OUTPUT (ALERT1, ALERT2)
VOL Low-level output voltage IOUT = –1 mA 0 0.02 0.4 V
IOH High-level output leakage current VO = V+ 0.1 1 μA
RPU Pullup resistors 75 100 125 kΩ
DIGITAL INPUT/OUTPUT (I/O1, I/O2)
VIH High-level input voltage 0.7 (V+) (V+) + 0.3 V
VIL Low-level input voltage –0.3 0.3 (V+) V
IIN Input current 0 V < VIN < (V+) + 0.3 V –1 1 μA
VOL Low-level output voltage IOUT = –1 mA 0 0.1 0.4 V
VOH High-level output voltage IOUT = 1 mA (V+) – 0.4 (V+) – 0.1 V+ V
Short-circuit current Short-circuit I/O1 and I/O2 to ground or V+,
V+ = 5 V		 60 mA
DEVICE TIMING
Conversion time One-shot mode 12 15 18 ms
Conversion rate Programmable 1/16 62 Conv/s
Device timeout time Any communication 35 40 ms
Global address-initialize command 1 1.25 s
EEPROM
Programming time V+ > 1.8 V 7 ms
Number of writes V+ > 1.8 V 1000 100,000 Times
Data retention time 10 Years
POWER SUPPLY
V+ Operating supply range 1.7 3.3 5.5 V
EEPROM write 1.8 3.3 5.5 V
IQ Quiescent current ADC conversion on,
SMAART wire bus inactive		 200 400 μA
ADC conversion on, SMAART wire bus active (bus baud rate = 57.6 kBd) 300
ADC conversion off, SMAART wire bus active (bus baud rate = 57.6 kBd) 100
1 conversion per second average,
SMAART wire bus inactive		 16 35
EEPROM write (ADC conversion off) 400
ISD Shutdown current SMAART wire bus inactive (I/O1, I/O2 = V+) 3.8 10 μA
Power-on reset voltage Supply voltage rising 1.4 V

7.6 Timing Requirements

MIN NOM MAX UNIT
FROM HOST TO THE TMP107-Q1
1/tBAUD SMAART bus baud rate 4.8 115.4 kBd
tRISE + tJITTER SMAART bus transition from low to high + edge timing variance 15 % of (1/baud)
tFALL + tJITTER SMAART bus transition from high to low + edge timing variance 15 % of (1/baud)
FROM THE TMP107-Q1 TO HOST OR NEXT TMP107-Q1 IN DAISY-CHAIN
tJITTER Edge timing variance 1 µs
tSKEW Average phase shift between IO1 and IO2 33 ns
tRISE SMAART bus transition from low to high, 10-pF load 10 ns
tFALL SMAART bus transition from high to low, 10-pF load 10 ns
TMP107-Q1 Timing_Diagram_sbos716.gif Figure 1. Timing Diagram

7.7 Typical Characteristics

at TA = 25°C and V+ = 3.3 V (unless otherwise noted)
TMP107-Q1 D003_SBOS716_TMP107.gif
One-shot mode, specified from –55ºC to +125ºC only
Figure 2. Temperature Error vs Temperature
TMP107-Q1 D005_SBOS716_TMP107.gif
One-shot mode, V+ = 1.7 V, specified from –55ºC to +125ºC only
Figure 4. Temperature Error vs Temperature
TMP107-Q1 D008_SBOS716_TMP107.gif
One-shot mode, V+ = 1.7 V to 5.5 V
Figure 6. Power-Supply Rejection Histogram
TMP107-Q1 D010_SBOS716_TMP107.gif
One-shot mode
Figure 8. Temperature Error vs Power Supply Voltage
TMP107-Q1 IqShutdownvsTemp.gif
Figure 10. Shutdown Current vs Temperature
TMP107-Q1 IqAveragevsTemp.gif
1 conversion per second
Figure 12. Average Quiescent Current vs Temperature
TMP107-Q1 D011_SBOS716_TMP107.gif
Figure 14. Sample Period Drift vs Power Supply Voltage
TMP107-Q1 D004_SBOS716_TMP107.gif
One-shot mode, V+ = 5.5 V, specified from –55ºC to +125ºC only
Figure 3. Temperature Error vs Temperature
TMP107-Q1 D007_SBOS716_TMP107.gif
Figure 5. Temperature Error Histogram
TMP107-Q1 D009_SBOS716_TMP107.gif
Continuous-conversion mode, maximum conversion rate,
bus inactive
Figure 7. Temperature Error vs Temperature
TMP107-Q1 D013_SBOS716_TMP107.gif
No bus communication
Figure 9. Continuous-Conversion Current vs Temperature
TMP107-Q1 IqvsSMAARTWireFreq.gif
Shutdown mode
Figure 11. Quiescent Current vs SMAART Wire Bus Speed
TMP107-Q1 EEPROMWrite.gif
Figure 13. EEPROM Programming (Write) Current
vs Power Supply Voltage
TMP107-Q1 D012_SBOS716_TMP107.gif
Figure 15. Alert Pin Sink Current Capability
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