ZHCSE08D May   2015  – January 2020 TMP107

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
    1.     Device Images
      1.      典型应用
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Digital Temperature Output
      2. 7.3.2 Temperature Limits and Alert
        1. 7.3.2.1 ALERT1, ALERT2, R1, and R2 Pins
      3. 7.3.3 SMAART Wire™ Communication Interface
        1. 7.3.3.1 Communication Protocol
          1. 7.3.3.1.1 Calibration Phase
          2. 7.3.3.1.2 Command and Address Phase
            1. 7.3.3.1.2.1 Global or Individual (G/nI) Bit
            2. 7.3.3.1.2.2 Read/Write (R/nW) Bit
            3. 7.3.3.1.2.3 Command or Address (C/nA) Bit:
          3. 7.3.3.1.3 Register Pointer Phase
          4. 7.3.3.1.4 Data Phase
        2. 7.3.3.2 SMAART Wire™ Operations
          1. 7.3.3.2.1 Command Operations
            1. 7.3.3.2.1.1 Address Initialize
            2. 7.3.3.2.1.2 Last Device Poll
            3. 7.3.3.2.1.3 Global Software Reset
          2. 7.3.3.2.2 Address Operations
            1. 7.3.3.2.2.1 Individual Write
            2. 7.3.3.2.2.2 Individual Read
            3. 7.3.3.2.2.3 Global Write
            4. 7.3.3.2.2.4 Global Read
    4. 7.4 Device Functional Modes
      1. 7.4.1 Continuous-Conversion Mode
      2. 7.4.2 Shutdown Mode
      3. 7.4.3 One-Shot Mode
    5. 7.5 Programming
      1. 7.5.1 EEPROM
      2. 7.5.2 EEPROM Operations
        1. 7.5.2.1 EEPROM Unlock
        2. 7.5.2.2 EEPROM Lock
        3. 7.5.2.3 EEPROM Programming
        4. 7.5.2.4 EEPROM Acquire or Read
    6. 7.6 Register Map
      1. 7.6.1 Temperature Register (address = 0h) [reset = 0h]
        1. Table 4. Temperature Register Field Descriptions
      2. 7.6.2 Configuration Register (address = 1h) [reset = A000h]
        1. Table 5. Configuration Register Field Descriptions
      3. 7.6.3 High Limit 1 Register (address = 2h) [reset = 7FFCh]
        1. Table 7. High Limit 1 Register Field Descriptions
      4. 7.6.4 Low Limit 1 Register (address = 3h) [reset = 8000h]
        1. Table 8. Low Limit 1 Register Field Descriptions
      5. 7.6.5 High Limit 2 Register (address = 4h) [reset = 7FFCh]
        1. Table 9. High Limit 2 Register Field Descriptions
      6. 7.6.6 Low Limit 2 Register (address = 5h) [reset = 8000h]
        1. Table 10. Low Limit 2 Register Field Descriptions
      7. 7.6.7 EEPROM n Register (where n = 1 to 8) (addresses = 6h to Dh) [reset = 0h]
        1. Table 11. EEPROM Register bits
      8. 7.6.8 Die ID Register (address = Fh) [reset = 1107h]
        1. Table 12. Die ID Register Field Descriptions
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Connecting Multiple Devices
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Voltage Drop Effect
          2. 8.2.1.2.2 EEPROM Programming Current
          3. 8.2.1.2.3 Power Savings
          4. 8.2.1.2.4 Accuracy
          5. 8.2.1.2.5 Electromagnetic Interference (EMI)
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Connecting ALERT1 and ALERT2 Pins
      3. 8.2.3 ALERT1 and ALERT2 Pins Used as General-Purpose Output (GPO)
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档
    2. 11.2 接收文档更新通知
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.5.2.3 EEPROM Programming

After the EEPROM is unlocked, a write to any EEPROM-associated register triggers EEPROM programming. A programming event takes up to 16 ms, depending on the device conditions; therefore, space out successive commands in 16-ms write periods.

Poll BUSY (bit 1 in the temperature register) to check the EEPROM programming status. The BUSY bit = 1 when the EEPROM program is in progress. The BUSY bit = 0 after programming is complete and the EEPROM is ready for another program operation. While the EEPROM is being programmed, writes to every other register are prevented in order to protect device data from corruption until programming is complete.

When the global write operation is issued to program the EEPROM locations, all of the devices in the daisy chain specified within the address field perform the programming simultaneously. This simultaneous programming leads to an increase in current in the supply wire of the daisy chain, and may create a drop in the supply voltage. It is important to maintain the supply voltage at greater than 1.8 V during the EEPROM programming in order to program devices in the daisy chain.
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