SBOS829 December 2016 TMP709-Q1
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Voltage | Supply, VCC | –0.3 | 6 | V |
Input, SET and HYST | –0.3 | VCC + 0.3 | ||
Output, OT | –0.3 | 6 | ||
Current | Input | 20 | mA | |
Output | 20 | |||
Temperature | Operating, TA | –40 | 125 | °C |
Junction, TJ | 150 | |||
Storatge, Tstg | –65 | 150 |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | ±4000 | V |
Charged-device model (CDM), per AEC Q100-011 | ±1000 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VCC | Supply voltage | 2.7 | 5.5 | V | |
TA | Operating temperature | 0 | 125 | °C |
THERMAL METRIC(1) | TMP709-Q1 | UNIT | |
---|---|---|---|
DBV (SOT-23) | |||
5 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 217.9 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 86.3 | °C/W |
RθJB | Junction-to-board thermal resistance | 44.6 | °C/W |
ψJT | Junction-to-top characterization parameter | 4.4 | °C/W |
ψJB | Junction-to-board characterization parameter | 43.8 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
POWER SUPPLY | ||||||
ICC | Supply current | VCC = 5 V | 40 | 55 | µA | |
VCC = 2.7 V | 40 | 55 | µA | |||
TEMPERATURE | ||||||
TE | Temperature error | TA = 60°C to 100°C | ±0.5 | ±3.5 | °C | |
DIGITAL INPUT (HYST) | ||||||
VIH | High-level input voltage | 0.7 × VCC | V | |||
VIL | Low-level input voltage | 0.3 × VCC | V | |||
CIN | Input capacitance | 10 | pF | |||
ANALOG INPUT (SET) | ||||||
VIN | Input voltage range | 0 | VCC | V | ||
Ilkg_in | Input leakage current | 1 | µA | |||
DIGITAL OPEN-DRAIN OUTPUT (OT) | ||||||
I(OT_SINK) | Output sink current | VOT = 0.3 V | 5 | 12 | mA | |
Ilkg(OT) | Output leakage current | VOT = VCC | 1 | µA |