ZHCSDR5B March   2012  – April 2015 TMS320C6654

PRODUCTION DATA.  

  1. 1 C6654 特性和描述
    1. 1.1 特性
    2. 1.2 KeyStone 架构
    3. 1.3 器件描述
    4. 1.4 功能方框图
  2. 2 修订历史记录
  3. 3 Device Overview
    1. 3.1 Device Characteristics
    2. 3.2 DSP Core Description
    3. 3.3 Memory Map Summary
    4. 3.4 Boot Sequence
    5. 3.5 Boot Modes Supported and PLL Settings
      1. 3.5.1 Boot Device Field
      2. 3.5.2 Device Configuration Field
        1. 3.5.2.1 EMIF16 / UART / No Boot Device Configuration
          1. 3.5.2.1.1 No Boot Mode
          2. 3.5.2.1.2 UART Boot Mode
          3. 3.5.2.1.3 EMIF16 Boot Mode
        2. 3.5.2.2 Ethernet (SGMII) Boot Device Configuration
        3. 3.5.2.3 NAND Boot Device Configuration
        4. 3.5.2.4 PCI Boot Device Configuration
        5. 3.5.2.5 I2C Boot Device Configuration
          1. 3.5.2.5.1 I2C Master Mode
          2. 3.5.2.5.2 I2C Passive Mode
        6. 3.5.2.6 SPI Boot Device Configuration
      3. 3.5.3 Boot Parameter Table
        1. 3.5.3.1 Sleep / XIP Mode Parameter Table
        2. 3.5.3.2 SRIO Mode Boot Parameter Table
        3. 3.5.3.3 Ethernet Mode Boot Parameter Table
        4. 3.5.3.4 NAND Mode Boot Parameter Table
        5. 3.5.3.5 PCIE Mode Boot Parameter Table
        6. 3.5.3.6 I2C Mode Boot Parameter Table
        7. 3.5.3.7 SPI Mode Boot Parameter Table
        8. 3.5.3.8 Hyperlink Mode Boot Parameter Table
        9. 3.5.3.9 UART Mode Boot Parameter Table
    6. 3.6 PLL Boot Configuration Settings
    7. 3.7 Second-Level Bootloaders
    8. 3.8 Terminals
      1. 3.8.1 Package Terminals
      2. 3.8.2 Pin Map
    9. 3.9 Terminal Functions
  4. 4 Device Configuration
    1. 4.1 Device Configuration at Device Reset
    2. 4.2 Peripheral Selection After Device Reset
    3. 4.3 Device State Control Registers
      1. 4.3.1  Device Status Register
      2. 4.3.2  Device Configuration Register
      3. 4.3.3  JTAG ID (JTAGID) Register Description
      4. 4.3.4  Kicker Mechanism (KICK0 and KICK1) Register
      5. 4.3.5  LRESETNMI PIN Status (LRSTNMIPINSTAT) Register
      6. 4.3.6  LRESETNMI PIN Status Clear (LRSTNMIPINSTAT_CLR) Register
      7. 4.3.7  Reset Status (RESET_STAT) Register
      8. 4.3.8  Reset Status Clear (RESET_STAT_CLR) Register
      9. 4.3.9  Boot Complete (BOOTCOMPLETE) Register
      10. 4.3.10 Power State Control (PWRSTATECTL) Register
      11. 4.3.11 NMI Event Generation to CorePac (NMIGRx) Register
      12. 4.3.12 IPC Generation (IPCGRx) Registers
      13. 4.3.13 IPC Acknowledgement (IPCARx) Registers
      14. 4.3.14 IPC Generation Host (IPCGRH) Register
      15. 4.3.15 IPC Acknowledgement Host (IPCARH) Register
      16. 4.3.16 Timer Input Selection Register (TINPSEL)
      17. 4.3.17 Timer Output Selection Register (TOUTPSEL)
      18. 4.3.18 Reset Mux (RSTMUXx) Register
      19. 4.3.19 Device Speed (DEVSPEED) Register
      20. 4.3.20 Pin Control 0 (PIN_CONTROL_0) Register
      21. 4.3.21 Pin Control 1 (PIN_CONTROL_1) Register
      22. 4.3.22 uPP Clock Source (UPP_CLOCK) Register
    4. 4.4 Pullup/Pulldown Resistors
  5. 5 System Interconnect
    1. 5.1 Internal Buses and Switch Fabrics
    2. 5.2 Switch Fabric Connections Matrix
    3. 5.3 TeraNet Switch Fabric Connections
    4. 5.4 Bus Priorities
      1. 5.4.1 Packet DMA Priority Allocation (PKTDMA_PRI_ALLOC) Register
      2. 5.4.2 EMAC / uPP Priority Allocation (EMAC_UPP_PRI_ALLOC) Register
  6. 6 C66x CorePac
    1. 6.1 Memory Architecture
      1. 6.1.1 L1P Memory
      2. 6.1.2 L1D Memory
      3. 6.1.3 L2 Memory
      4. 6.1.4 MSM Controller
      5. 6.1.5 L3 Memory
    2. 6.2 Memory Protection
    3. 6.3 Bandwidth Management
    4. 6.4 Power-Down Control
    5. 6.5 C66x CorePac Revision
    6. 6.6 C66x CorePac Register Descriptions
  7. 7 Device Operating Conditions
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Recommended Operating Conditions
    3. 7.3 Electrical Characteristics
    4. 7.4 Power Supply to Peripheral I/O Mapping
  8. 8 Peripheral Information and Electrical Specifications
    1. 8.1  Recommended Clock and Control Signal Transition Behavior
    2. 8.2  Power Supplies
      1. 8.2.1 Power-Supply Sequencing
        1. 8.2.1.1 Core-Before-IO Power Sequencing
        2. 8.2.1.2 IO-Before-Core Power Sequencing
        3. 8.2.1.3 Prolonged Resets
        4. 8.2.1.4 Clocking During Power Sequencing
      2. 8.2.2 Power-Down Sequence
      3. 8.2.3 Power Supply Decoupling and Bulk Capacitors
      4. 8.2.4 SmartReflex
    3. 8.3  Power Sleep Controller (PSC)
      1. 8.3.1 Power Domains
      2. 8.3.2 Clock Domains
      3. 8.3.3 PSC Register Memory Map
    4. 8.4  Reset Controller
      1. 8.4.1 Power-on Reset
      2. 8.4.2 Hard Reset
      3. 8.4.3 Soft Reset
      4. 8.4.4 Local Reset
      5. 8.4.5 Reset Priority
      6. 8.4.6 Reset Controller Register
      7. 8.4.7 Reset Electrical Data / Timing
    5. 8.5  Main PLL and PLL Controller
      1. 8.5.1 Main PLL Controller Device-Specific Information
        1. 8.5.1.1 Internal Clocks and Maximum Operating Frequencies
        2. 8.5.1.2 Main PLL Controller Operating Modes
        3. 8.5.1.3 Main PLL Stabilization, Lock, and Reset Times
      2. 8.5.2 PLL Controller Memory Map
        1. 8.5.2.1 PLL Secondary Control Register (SECCTL)
        2. 8.5.2.2 PLL Controller Divider Register (PLLDIV2, PLLDIV5, PLLDIV8)
        3. 8.5.2.3 PLL Controller Clock Align Control Register (ALNCTL)
        4. 8.5.2.4 PLLDIV Divider Ratio Change Status Register (DCHANGE)
        5. 8.5.2.5 SYSCLK Status Register (SYSTAT)
        6. 8.5.2.6 Reset Type Status Register (RSTYPE)
        7. 8.5.2.7 Reset Control Register (RSTCTRL)
        8. 8.5.2.8 Reset Configuration Register (RSTCFG)
        9. 8.5.2.9 Reset Isolation Register (RSISO)
      3. 8.5.3 Main PLL Control Register
      4. 8.5.4 Main PLL and PLL Controller Initialization Sequence
      5. 8.5.5 Main PLL Controller/PCIe Clock Input Electrical Data/Timing
    6. 8.6  DDR3 PLL
      1. 8.6.1 DDR3 PLL Control Register
      2. 8.6.2 DDR3 PLL Device-Specific Information
      3. 8.6.3 DDR3 PLL Initialization Sequence
      4. 8.6.4 DDR3 PLL Input Clock Electrical Data/Timing
    7. 8.7  Enhanced Direct Memory Access (EDMA3) Controller
      1. 8.7.1 EDMA3 Device-Specific Information
      2. 8.7.2 EDMA3 Channel Controller Configuration
      3. 8.7.3 EDMA3 Transfer Controller Configuration
      4. 8.7.4 EDMA3 Channel Synchronization Events
    8. 8.8  Interrupts
      1. 8.8.1 Interrupt Sources and Interrupt Controller
      2. 8.8.2 CIC Registers
        1. 8.8.2.1 CIC0 Register Map
        2. 8.8.2.2 CIC1 Register Map
      3. 8.8.3 Inter-Processor Register Map
      4. 8.8.4 NMI and LRESET
      5. 8.8.5 External Interrupts Electrical Data/Timing
    9. 8.9  Memory Protection Unit (MPU)
      1. 8.9.1 MPU Registers
        1. 8.9.1.1 MPU Register Map
        2. 8.9.1.2 Device-Specific MPU Registers
          1. 8.9.1.2.1 Configuration Register (CONFIG)
      2. 8.9.2 MPU Programmable Range Registers
        1. 8.9.2.1 Programmable Range n Start Address Register (PROGn_MPSAR)
        2. 8.9.2.2 Programmable Range n End Address Register (PROGn_MPEAR)
        3. 8.9.2.3 Programmable Range n Memory Protection Page Attribute Register (PROGn_MPPA)
        4. 8.9.2.4 MPU Registers Reset Values
    10. 8.10 DDR3 Memory Controller
      1. 8.10.1 DDR3 Memory Controller Device-Specific Information
      2. 8.10.2 DDR3 Memory Controller Electrical Data/Timing
    11. 8.11 I2C Peripheral
      1. 8.11.1 I2C Device-Specific Information
      2. 8.11.2 I2C Peripheral Register Description(s)
      3. 8.11.3 I2C Electrical Data/Timing
        1. 8.11.3.1 Inter-Integrated Circuits (I2C) Timing
    12. 8.12 SPI Peripheral
      1. 8.12.1 SPI Electrical Data/Timing
        1. 8.12.1.1 SPI Timing
    13. 8.13 UART Peripheral
    14. 8.14 PCIe Peripheral
    15. 8.15 EMIF16 Peripheral
      1. 8.15.1 EMIF16 Electrical Data/Timing
    16. 8.16 Ethernet Media Access Controller (EMAC)
      1. 8.16.1 EMAC Device-Specific Information
      2. 8.16.2 EMAC Peripheral Register Description(s)
      3. 8.16.3 EMAC Electrical Data/Timing (SGMII)
    17. 8.17 Management Data Input/Output (MDIO)
      1. 8.17.1 MDIO Peripheral Registers
      2. 8.17.2 MDIO Timing
    18. 8.18 Timers
      1. 8.18.1 Timers Device-Specific Information
      2. 8.18.2 Timers Electrical Data/Timing
    19. 8.19 General-Purpose Input/Output (GPIO)
      1. 8.19.1 GPIO Device-Specific Information
      2. 8.19.2 GPIO Electrical Data/Timing
    20. 8.20 Semaphore2
    21. 8.21 Multichannel Buffered Serial Port (McBSP)
      1. 8.21.1 McBSP Peripheral Register
      2. 8.21.2 McBSP Electrical Data/Timing
        1. 8.21.2.1 McBSP Timing
    22. 8.22 Universal Parallel Port (uPP)
      1. 8.22.1 uPP Register Descriptions
    23. 8.23 Emulation Features and Capability
      1. 8.23.1 Advanced Event Triggering (AET)
      2. 8.23.2 Trace
        1. 8.23.2.1 Trace Electrical Data/Timing
      3. 8.23.3 IEEE 1149.1 JTAG
        1. 8.23.3.1 IEEE 1149.1 JTAG Compatibility Statement
        2. 8.23.3.2 JTAG Electrical Data/Timing
  9. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
      2. 9.1.2 Device and Development-Support Tool Nomenclature
    2. 9.2 Documentation Support
      1. 9.2.1 Related Links
      2. 9.2.2 社区资源
    3. 9.3 商标
    4. 9.4 静电放电警告
    5. 9.5 Glossary
  10. 10Mechanical Data
    1. 10.1 Thermal Data
    2. 10.2 Packaging Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • CZH|625
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Device Operating Conditions

7.1 Absolute Maximum Ratings(1)

Over Operating Case Temperature Range (Unless Otherwise Noted)
Supply voltage range(2): CVDD -0.3 V to 1.3 V
CVDD1 -0.3 V to 1.3 V
DVDD15 -0.3 V to 2.45 V
DVDD18 -0.3 V to 2.45 V
VREFSSTL 0.49 × DVDD15 to 0.51 × DVDD15
VDDT1, VDDT2 -0.3 V to 1.3 V
VDDR1, VDDR2, VDDR3, VDDR4 -0.3 V to 2.45 V
AVDDA1, AVDDA2 -0.3 V to 2.45 V
VSS Ground 0 V
Input voltage (VI) range: LVCMOS (1.8V) -0.3 V to DVDD18+0.3 V
DDR3 -0.3 V to 2.45 V
I2C -0.3 V to 2.45 V
LVDS -0.3 V to DVDD18+0.3 V
LJCB -0.3 V to 1.3 V
SerDes -0.3 V to CVDD1+0.3 V
Output voltage (VO) range: LVCMOS (1.8V) -0.3 V to DVDD18+0.3 V
DDR3 -0.3 V to 2.45 V
I2C -0.3 V to 2.45 V
SerDes -0.3 V to CVDD1+0.3 V
Operating case temperature range, TC: Commercial 0°C to 85°C
Extended -40°C to 100°C
ESD stress voltage, VESD(3): HBM (human body model)(4) ±1000 V
CDM (charged device model)(5) ±250 V
Overshoot/undershoot(6) LVCMOS (1.8V) 20% Overshoot/Undershoot for 20% of Signal Duty Cycle
DDR3
I2C
Storage temperature range, Tstg: -65°C to 150°C
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to VSS.
(3) Electrostatic discharge (ESD) to measure device sensitivity/immunity to damage caused by electrostatic discharges into the device.
(4) Level listed above is the passing level per ANSI/ESDA/JEDEC JS-001-2010. JEDEC document JEP155 states that 500 V HBM allows safe manufacturing with a standard ESD control process, and manufacturing with less than 500 V HBM is possible if necessary precautions are taken. Pins listed as 1000 V may actually have higher performance.
(5) Level listed above is the passing level per EIA-JEDEC JESD22-C101E. JEDEC document JEP157 states that 250 V CDM allows safe manufacturing with a standard ESD control process. Pins listed as 250 V may actually have higher performance.
(6) Overshoot/Undershoot percentage relative to I/O operating values - for example the maximum overshoot value for 1.8-V LVCMOS signals is DVDD18 + 0.20 × DVDD18 and maximum undershoot value would be VSS - 0.20 × DVDD18

7.2 Recommended Operating Conditions(1)(2)

MIN NOM MAX UNIT
CVDD SR Core Supply 850MHz - Device SRVnom(3) × 0.95 0.85-1.1(4) SRVnom × 1.05 V
CVDD1 Core supply voltage for memory array 0.95 1 1.05 V
DVDD18 1.8-V supply I/O voltage 1.71 1.8 1.89 V
DVDD15 1.5-V supply I/O voltage 1.425 1.5 1.575 V
VREFSSTL DDR3 reference voltage 0.49 × DVDD15 0.5 × DVDD15 0.51 × DVDD15 V
VDDRx(5) SerDes regulator supply 1.425 1.5 1.575 V
VDDAx PLL analog supply 1.71 1.8 1.89 V
VDDTx SerDes termination supply 0.95 1 1.05 V
VSS Ground 0 0 0 V
VIH High-level input voltage LVCMOS (1.8 V) 0.65 × DVDD18 V
I2C 0.7 × DVDD18 V
DDR3 EMIF VREFSSTL + 0.1 V
VIL Low-level input voltage LVCMOS (1.8 V) 0.35 × DVDD18 V
DDR3 EMIF -0.3 VREFSSTL - 0.1 V
I2C 0.3 × DVDD18 V
TC Operating case temperature Commercial 0 85 °C
Extended -40 100 °C
(1) All differential clock inputs comply with the LVDS Electrical Specification, IEEE 1596.3-1996 and all SERDES I/Os comply with the XAUI Electrical Specification, IEEE 802.3ae-2002.
(2) All SERDES I/Os comply with the XAUI Electrical Specification, IEEE 802.3ae-2002.
(3) SRVnom refers to the unique SmartReflex core supply voltage set from the factory for each individual device.
(4) The initial CVDD voltage at power on will be 1.1V nominal and it must transition to VID set value immediately after being presented on VCNTL pins. This is required to maintain full power functionality and reliability targets guaranteed by TI.
(5) Where x = 1, 2, 3, 4... to indicate all supplies of the same kind.

7.3 Electrical Characteristics

Over Recommended Ranges of Supply Voltage and Operating Case Temperature (Unless Otherwise Noted)
PARAMETER TEST CONDITIONS(1) MIN NOM MAX UNIT
VOH High-level output voltage LVCMOS (1.8 V) IO = IOH DVDD18 - 0.45 V
DDR3 DVDD15 - 0.4
I2C(2)
VOL Low-level output voltage LVCMOS (1.8 V) IO = IOL 0.45 V
DDR3 0.4
I2C IO = 3 mA, pulled up to 1.8 V 0.4
II(3) Input current [DC] LVCMOS (1.8 V) No IPD/IPU -5 5 µA
Internal pullup 50 100 170(4)
Internal pulldown -170 -100 -50
I2C 0.1 × DVDD18 V < VI < 0.9 × DVDD18 V -10 10
IOH High-level output current [DC] LVCMOS (1.8 V) -6 mA
DDR3 -8
I2C(5)
IOL Low-level output current [DC] LVCMOS (1.8 V) 6 mA
DDR3 8
I2C 3
IOZ(6) Off-state output current [DC] LVCMOS (1.8 V) -2 2 µA
DDR3 -2 2
I2C -2 2
(1) For test conditions shown as MIN, MAX, or TYP, use the appropriate value specified in the recommended operating conditions table.
(2) I2C uses open collector IOs and does not have a VOH Minimum.
(3) II applies to input-only pins and bi-directional pins. For input-only pins, II indicates the input leakage current. For bi-directional pins, II includes input leakage current and off-state (Hi-Z) output leakage current.
(4) For RESETSTAT, max DC input current is 300 µA.
(5) I2C uses open collector IOs and does not have a IOH Maximum.
(6) IOZ applies to output-only pins, indicating off-state (Hi-Z) output leakage current.

7.4 Power Supply to Peripheral I/O Mapping(1)(2)

Over Recommended Ranges of Supply Voltage and Operating Case Temperature (Unless Otherwise Noted)
POWER SUPPLY I/O BUFFER TYPE ASSOCIATED PERIPHERAL
CVDD Supply Core Voltage LJCB CORECLK(P|N) PLL input buffers
SGMIICLK(P|N) SerDes PLL input buffers
DDRCLK(P|N) PLL input buffers
PCIECLK(P|N) SERDES PLL input buffers
DVDD15 1.5-V supply I/O voltage DDR3 (1.5 V) All DDR3 memory controller peripheral I/O buffers
DVDD18 1.8-V supply I/O voltage LVCMOS (1.8 V) All GPIO peripheral I/O buffers
All JTAG and EMU peripheral I/O buffers
All Timer peripheral I/O buffers
All SPI peripheral I/O buffers
All RESETs, NMI, Control peripheral I/O buffers
All MDIO peripheral I/O buffers
All UART peripheral I/O buffers
All McBSP peripheral I/O buffers
All EMIF16 peripheral I/O buffers
All uPP peripheral I/O buffers
Open-drain (1.8V) All I2C peripheral I/O buffers
All SmartReflex peripheral I/O buffers
VDDT2 SGMII/PCIE SerDes termination and analogue front-end supply SerDes/CML SGMII/PCIE SerDes CML IO buffers
(1) Please note that this table does not attempt to describe all functions of all power supply terminals but only those whose purpose it is to power peripheral I/O buffers and clock input buffers.
(2) Please see the Hardware Design Guide for KeyStone Devices (SPRABI2) for more information about individual peripheral I/O.
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