ZHCSGV6F June 2009 – January 2017 TMS320C6742
PRODUCTION DATA.
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VOH | High-level output voltage
(dual-voltage LVCMOS IOs at 3.3V)(3) |
DVDD= 3.15V, IOH = -2 mA | 2.4 | V | ||
DVDD= 3.15V, IOH = -100 μA | 2.95 | V | ||||
High-level output voltage
(dual-voltage LVCMOS IOs at 1.8V)(3) |
DVDD= 1.71V, IOH = -2 mA | DVDD-0.45 | V | |||
VOL | Low-level output voltage
(dual-voltage LVCMOS I/Os at 3.3V)(3) |
DVDD= 3.15V, IOL = 2mA | 0.4 | V | ||
DVDD= 3.15V, IOL = 100 μA | 0.2 | V | ||||
Low-level output voltage
(dual-voltage LVCMOS I/Os at 1.8V)(3) |
DVDD= 1.71V, IOL = 2mA | 0.45 | V | |||
II(2) | Input current(3)
(dual-voltage LVCMOS I/Os) |
VI = VSS to DVDD without opposing internal resistor | ±9 | μA | ||
VI = VSS to DVDD with opposing internal pullup resistor (1) | 70 | 310 | μA | |||
VI = VSS to DVDD
with opposing internal pulldown resistor (1) |
-75 | -270 | μA | |||
Input current
(DDR2/mDDR I/Os) |
VI = VSS to DVDD with opposing internal pulldown resistor (1) | -77 | -286 | μA | ||
IOH | High-level output current(3)
(dual-voltage LVCMOS I/Os) |
-6 | mA | |||
IOL | Low-level output current(3)
(dual-voltage LVCMOS I/Os) |
6 | mA | |||
Capacitance | Input capacitance (dual-voltage LVCMOS) | 3 | pF | |||
Output capacitance (dual-voltage LVCMOS) | 3 | pF |