ZHCSAH6F November 2012 – September 2021 TMS320F28050 , TMS320F28051 , TMS320F28052 , TMS320F28052F , TMS320F28052M , TMS320F28053 , TMS320F28054 , TMS320F28054F , TMS320F28054M , TMS320F28055
PRODUCTION DATA
PARAMETER | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
tw(RSL1) | Pulse duration, XRS driven by device | 600 | μs | ||
tw(WDRS) | Pulse duration, reset pulse generated by watchdog | 512tc(OSCCLK) | cycles | ||
td(EX) | Delay time, address/data valid after XRS high | 32tc(OSCCLK) | cycles | ||
tINTOSCST | Start-up time, internal zero-pin oscillator | 3 | μs | ||
tOSCST (1) | On-chip crystal-oscillator start-up time | 1 | 10 | ms |
Figure 7-8 shows an example for the effect of writing into PLLCR register. In the first phase, PLLCR = 0x0004 and SYSCLKOUT = OSCCLK × 2. The PLLCR is then written with 0x0008. Immediately after the PLLCR register is written, the PLL lock-up phase begins. During this phase, SYSCLKOUT = OSCCLK/2. After the PLL lock-up is complete, SYSCLKOUT reflects the new operating frequency, OSCCLK × 4.