ZHCS894U April   2001  – July 2019 TMS320F2810 , TMS320F2811 , TMS320F2812

PRODUCTION DATA.  

  1. 1器件概述
    1. 1.1 特性
    2. 1.2 应用
    3. 1.3 说明
    4. 1.4 功能方框图
  2. 2修订历史记录
  3. 3Device Comparison
    1. 3.1 Related Products
  4. 4Terminal Configuration and Functions
    1. 4.1 Pin Diagrams
    2. 4.2 Signal Descriptions
  5. 5Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings – Commercial
    3. 5.3  ESD Ratings – Automotive
    4. 5.4  Recommended Operating Conditions
    5. 5.5  Power Consumption Summary
      1. Table 5-1 TMS320F281x Current Consumption by Power-Supply Pins Over Recommended Operating Conditions During Low-Power Modes at 150-MHz SYSCLKOUT
      2. 5.5.1     Current Consumption Graphs
      3. 5.5.2     Reducing Current Consumption
    6. 5.6  Electrical Characteristics
    7. 5.7  Thermal Resistance Characteristics for 179-Ball ZHH Package
    8. 5.8  Thermal Resistance Characteristics for 179-Ball GHH Package
    9. 5.9  Thermal Resistance Characteristics for 176-Pin PGF Package
    10. 5.10 Thermal Resistance Characteristics for 128-Pin PBK Package
    11. 5.11 Thermal Design Considerations
    12. 5.12 Timing and Switching Characteristics
      1. 5.12.1 Timing Parameter Symbology
        1. 5.12.1.1 General Notes on Timing Parameters
        2. 5.12.1.2 Test Load Circuit
        3. 5.12.1.3 Signal Transition Levels
      2. 5.12.2 Power Supply Sequencing
      3. 5.12.3 Reset Timing
        1. Table 5-3 Reset (XRS) Timing Requirements
      4. 5.12.4 Clock Specifications
        1. 5.12.4.1 Device Clock Table
          1. Table 5-4 Clock Table and Nomenclature
        2. 5.12.4.2 Clock Requirements and Characteristics
          1. 5.12.4.2.1 Input Clock Requirements
            1. Table 5-5 Input Clock Frequency
            2. Table 5-6 XCLKIN Timing Requirements – PLL Bypassed or Enabled
            3. Table 5-7 XCLKIN Timing Requirements – PLL Disabled
          2. 5.12.4.2.2 Output Clock Characteristics
            1. Table 5-9 XCLKOUT Switching Characteristics (PLL Bypassed or Enabled)
      5. 5.12.5 Peripherals
        1. 5.12.5.1  General-Purpose Input/Output (GPIO) – Output Timing
          1. Table 5-10 General-Purpose Output Switching Characteristics
        2. 5.12.5.2  General-Purpose Input/Output (GPIO) – Input Timing
          1. Table 5-11 General-Purpose Input Timing Requirements
        3. 5.12.5.3  Event Manager Interface
          1. 5.12.5.3.1 PWM Timing
            1. Table 5-12 PWM Switching Characteristics
            2. Table 5-13 Timer and Capture Unit Timing Requirements
            3. Table 5-14 External ADC Start-of-Conversion – EVA – Switching Characteristics
            4. Table 5-15 External ADC Start-of-Conversion – EVB – Switching Characteristics
        4. 5.12.5.4  Low-Power Mode Wakeup Timing
          1. Table 5-16 IDLE Mode Timing Requirements
          2. Table 5-17 IDLE Mode Switching Characteristics
          3. Table 5-18 STANDBY Mode Timing Requirements
          4. Table 5-19 STANDBY Mode Switching Characteristics
          5. Table 5-20 HALT Mode Timing Requirements
          6. Table 5-21 HALT Mode Switching Characteristics
        5. 5.12.5.5  Serial Peripheral Interface (SPI) Master Mode Timing
          1. Table 5-22 SPI Master Mode External Timing (Clock Phase = 0)
          2. Table 5-23 SPI Master Mode External Timing (Clock Phase = 1)
        6. 5.12.5.6  Serial Peripheral Interface (SPI) Slave Mode Timing
          1. Table 5-24 SPI Slave Mode External Timing (Clock Phase = 0)
          2. Table 5-25 SPI Slave Mode External Timing (Clock Phase = 1)
        7. 5.12.5.7  External Interface (XINTF) Timing
          1. 5.12.5.7.1 USEREADY = 0
          2. 5.12.5.7.2 Synchronous Mode (USEREADY = 1, READYMODE = 0)
          3. 5.12.5.7.3 Asynchronous Mode (USEREADY = 1, READYMODE = 1)
        8. 5.12.5.8  XINTF Signal Alignment to XCLKOUT
        9. 5.12.5.9  External Interface Read Timing
          1. Table 5-28 External Memory Interface Read Switching Characteristics
          2. Table 5-29 External Memory Interface Read Timing Requirements
        10. 5.12.5.10 External Interface Write Timing
          1. Table 5-30 External Memory Interface Write Switching Characteristics
        11. 5.12.5.11 External Interface Ready-on-Read Timing With One External Wait State
          1. Table 5-31 External Memory Interface Read Switching Characteristics (Ready-on-Read, 1 Wait State)
          2. Table 5-32 External Memory Interface Read Timing Requirements (Ready-on-Read, 1 Wait State)
          3. Table 5-33 Synchronous XREADY Timing Requirements (Ready-on-Read, 1 Wait State)
          4. Table 5-34 Asynchronous XREADY Timing Requirements (Ready-on-Read, 1 Wait State)
        12. 5.12.5.12 External Interface Ready-on-Write Timing With One External Wait State
          1. Table 5-35 External Memory Interface Write Switching Characteristics (Ready-on-Write, 1 Wait State)
          2. Table 5-36 Synchronous XREADY Timing Requirements (Ready-on-Write, 1 Wait State)
          3. Table 5-37 Asynchronous XREADY Timing Requirements (Ready-on-Write, 1 Wait State)
        13. 5.12.5.13 XHOLD and XHOLDA
        14. 5.12.5.14 XHOLD/XHOLDA Timing
          1. Table 5-38 XHOLD/XHOLDA Timing Requirements (XCLKOUT = XTIMCLK)
          2. Table 5-39 XHOLD/XHOLDA Timing Requirements (XCLKOUT = 1/2 XTIMCLK)
        15. 5.12.5.15 On-Chip Analog-to-Digital Converter
          1. Table 5-40  ADC Absolute Maximum Ratings Over Recommended Operating Conditions (Unless Otherwise Noted)
          2. Table 5-41  ADC Electrical Characteristics Over Recommended Operating Conditions (Unless Otherwise Noted)—AC Specifications
          3. Table 5-42  ADC Electrical Characteristics Over Recommended Operating Conditions (Unless Otherwise Noted)—DC Specifications
          4. 5.12.5.15.1 Current Consumption for Different ADC Configurations
            1. Table 5-43 Current Consumption for Different ADC Configurations (at 25-MHz ADCCLK)
          5. 5.12.5.15.2 ADC Power-Up Control Bit Timing
            1. Table 5-44 ADC Power-Up Delays
          6. 5.12.5.15.3 Detailed Description
            1. 5.12.5.15.3.1 Reference Voltage
            2. 5.12.5.15.3.2 Analog Inputs
            3. 5.12.5.15.3.3 Converter
            4. 5.12.5.15.3.4 Conversion Modes
          7. 5.12.5.15.4 Sequential Sampling Mode (Single-Channel) (SMODE = 0)
            1. Table 5-45 Sequential Sampling Mode Timing
          8. 5.12.5.15.5 Simultaneous Sampling Mode (Dual-Channel) (SMODE = 1)
            1. Table 5-46 Simultaneous Sampling Mode Timing
          9. 5.12.5.15.6 Definitions of Specifications and Terminology
        16. 5.12.5.16 Multichannel Buffered Serial Port (McBSP) Timing
          1. 5.12.5.16.1 McBSP Transmit and Receive Timing
            1. Table 5-47 McBSP Timing Requirements
            2. Table 5-48 McBSP Switching Characteristics
          2. 5.12.5.16.2 McBSP as SPI Master or Slave Timing
            1. Table 5-49 McBSP as SPI Master or Slave Timing Requirements (CLKSTP = 10b, CLKXP = 0)
            2. Table 5-50 McBSP as SPI Master or Slave Switching Characteristics (CLKSTP = 10b, CLKXP = 0)
            3. Table 5-51 McBSP as SPI Master or Slave Timing Requirements (CLKSTP = 11b, CLKXP = 0)
            4. Table 5-52 McBSP as SPI Master or Slave Switching Characteristics (CLKSTP = 11b, CLKXP = 0)
            5. Table 5-53 McBSP as SPI Master or Slave Timing Requirements (CLKSTP = 10b, CLKXP = 1)
            6. Table 5-54 McBSP as SPI Master or Slave Switching Characteristics (CLKSTP = 10b, CLKXP = 1)
            7. Table 5-55 McBSP as SPI Master or Slave Timing Requirements (CLKSTP = 11b, CLKXP = 1)
            8. Table 5-56 McBSP as SPI Master or Slave Switching Characteristics (CLKSTP = 11b, CLKXP = 1)
      6. 5.12.6 Emulator Connection Without Signal Buffering for the DSP
      7. 5.12.7 Interrupt Timing
        1. Table 5-57 Interrupt Switching Characteristics
        2. Table 5-58 Interrupt Timing Requirements
      8. 5.12.8 Flash Timing
        1. Table 5-59 Flash Endurance for A and S Temperature Material
        2. Table 5-60 Flash Endurance for Q Temperature Material
        3. Table 5-61 Flash Parameters at 150-MHz SYSCLKOUT
        4. Table 5-62 Flash/OTP Access Timing
        5. Table 5-63 Flash Data Retention Duration
  6. 6Detailed Description
    1. 6.1  Brief Descriptions
      1. 6.1.1  C28x CPU
      2. 6.1.2  Memory Bus (Harvard Bus Architecture)
      3. 6.1.3  Peripheral Bus
      4. 6.1.4  Real-Time JTAG and Analysis
      5. 6.1.5  External Interface (XINTF) (F2812 Only)
      6. 6.1.6  Flash
      7. 6.1.7  M0, M1 SARAMs
      8. 6.1.8  L0, L1, H0 SARAMs
      9. 6.1.9  Boot ROM
      10. 6.1.10 Security
      11. 6.1.11 Peripheral Interrupt Expansion (PIE) Block
      12. 6.1.12 External Interrupts (XINT1, XINT2, XINT13, XNMI)
      13. 6.1.13 Oscillator and PLL
      14. 6.1.14 Watchdog
      15. 6.1.15 Peripheral Clocking
      16. 6.1.16 Low-Power Modes
      17. 6.1.17 Peripheral Frames 0, 1, 2 (PFn)
      18. 6.1.18 General-Purpose Input/Output (GPIO) Multiplexer
      19. 6.1.19 32-Bit CPU-Timers (0, 1, 2)
      20. 6.1.20 Control Peripherals
      21. 6.1.21 Serial Port Peripherals
    2. 6.2  Peripherals
      1. 6.2.1 32-Bit CPU-Timers 0/1/2
      2. 6.2.2 Event Manager Modules (EVA, EVB)
        1. 6.2.2.1 General-Purpose (GP) Timers
        2. 6.2.2.2 Full-Compare Units
        3. 6.2.2.3 Programmable Deadband Generator
        4. 6.2.2.4 PWM Waveform Generation
        5. 6.2.2.5 Double Update PWM Mode
        6. 6.2.2.6 PWM Characteristics
        7. 6.2.2.7 Capture Unit
        8. 6.2.2.8 Quadrature-Encoder Pulse (QEP) Circuit
        9. 6.2.2.9 External ADC Start-of-Conversion
      3. 6.2.3 Enhanced Analog-to-Digital Converter (ADC) Module
      4. 6.2.4 Enhanced Controller Area Network (eCAN) Module
      5. 6.2.5 Multichannel Buffered Serial Port (McBSP) Module
      6. 6.2.6 Serial Communications Interface (SCI) Module
      7. 6.2.7 Serial Peripheral Interface (SPI) Module
      8. 6.2.8 GPIO MUX
    3. 6.3  Memory Maps
    4. 6.4  Register Map
    5. 6.5  Device Emulation Registers
    6. 6.6  External Interface, XINTF (F2812 Only)
      1. 6.6.1 Timing Registers
      2. 6.6.2 XREVISION Register
    7. 6.7  Interrupts
      1. 6.7.1 External Interrupts
    8. 6.8  System Control
    9. 6.9  OSC and PLL Block
      1. 6.9.1 Loss of Input Clock
    10. 6.10 PLL-Based Clock Module
    11. 6.11 External Reference Oscillator Clock Option
    12. 6.12 Watchdog Block
    13. 6.13 Low-Power Modes Block
  7. 7Applications, Implementation, and Layout
    1. 7.1 TI Reference Design
  8. 8器件和文档支持
    1. 8.1 入门
    2. 8.2 器件和开发支持工具命名规则
    3. 8.3 工具与软件
    4. 8.4 文档支持
    5. 8.5 相关链接
    6. 8.6 Community Resources
    7. 8.7 商标
    8. 8.8 静电放电警告
    9. 8.9 Glossary
  9. 9机械、封装和可订购信息
    1. 9.1 封装信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • PBK|128
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.12.5.15.6 Definitions of Specifications and Terminology

Integral Nonlinearity

Integral nonlinearity refers to the deviation of each individual code from a line drawn from zero through full scale. The point used as zero occurs 1/2 LSB before the first code transition. The full-scale point is defined as level 1/2 LSB beyond the last code transition. The deviation is measured from the center of each particular code to the true straight line between these two points.

Differential Nonlinearity

An ideal ADC exhibits code transitions that are exactly 1 LSB apart. DNL is the deviation from this ideal value. A differential nonlinearity error of less than ±1 LSB ensures no missing codes.

Zero Offset

The major carry transition should occur when the analog input is at zero volt. Zero error is defined as the deviation of the actual transition from that point.

Gain Error

The first code transition should occur at an analog value 1/2 LSB above negative full scale. The last transition should occur at an analog value 1 1/2 LSB below the nominal full scale. Gain error is the deviation of the actual difference between first and last code transitions and the ideal difference between first and last code transitions.

Signal-to-Noise Ratio + Distortion (SINAD)

SINAD is the ratio of the rms value of the measured input signal to the rms sum of all other spectral components below the Nyquist frequency, including harmonics but excluding dc. The value for SINAD is expressed in decibels.

Effective Number of Bits (ENOB)

For a sine wave, SINAD can be expressed in terms of the number of bits. Using the following formula,

TMS320F2810 TMS320F2811 TMS320F2812 q_sinad_prs174.gif

it is possible to get a measure of performance expressed as N, the effective number of bits. Thus, effective number of bits for a device for sine wave inputs at a given input frequency can be calculated directly from its measured SINAD.

Total Harmonic Distortion (THD)

THD is the ratio of the rms sum of the first six harmonic components to the rms value of the measured input signal and is expressed as a percentage or in decibels.

Spurious Free Dynamic Range (SFDR)

SFDR is the difference in dB between the rms amplitude of the input signal and the peak spurious signal.
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