Table 5-61 Flash Parameters at 150-MHz SYSCLKOUT(1)
PARAMETER |
MIN |
TYP |
MAX |
UNIT |
Program Time |
16-Bit Word |
Using Flash API v1(2) |
|
|
35 |
|
µs |
Using Flash API v2.10 |
|
|
50 |
|
8K Sector |
Using Flash API v1(2) |
|
|
170 |
|
ms |
Using Flash API v2.10 |
|
|
250 |
|
16K Sector |
Using Flash API v1(2) |
|
|
320 |
|
ms |
Using Flash API v2.10 |
|
|
500 |
|
Erase Time(3) |
8K Sector |
|
|
|
10 |
|
s |
16K Sector |
|
|
|
11 |
|
IDD3VFLP |
VDD3VFL current consumption during the Erase/Program cycle |
Erase |
|
75 |
|
mA |
Program |
|
35 |
|
IDDP |
VDD current consumption during Erase/Program cycle |
|
|
140 |
|
mA |
IDDIOP |
VDDIO current consumption during Erase/Program cycle |
|
|
20 |
|
mA |
(1) Typical parameters as seen at room temperature including function call overhead, with all peripherals off. It is important to maintain a stable power supply during the entire flash programming process. It is conceivable that device current consumption during flash programming could be higher than normal operating conditions. The power supply used should ensure VMIN on the supply rails at all times, as specified in the Recommended Operating Conditions of the data sheet. Any brown-out or interruption to power during erasing/programming could potentially corrupt the password locations and lock the device permanently. Powering a target board (during flash programming) through the USB port is not recommended, as the port may be unable to respond to the power demands placed during the programming process.
(2) Flash API v1.00 is useable on rev. C silicon only.
(3) The on-chip flash memory is in an erased state when the device is shipped from TI. As such, erasing the flash memory is not required prior to programming, when programming the device for the first time. However, the erase operation is needed on all subsequent programming operations.