ZHCSC63P December 2013 – February 2024 TMS320F28374D , TMS320F28375D , TMS320F28376D , TMS320F28377D , TMS320F28377D-Q1 , TMS320F28378D , TMS320F28379D , TMS320F28379D-Q1
PRODUCTION DATA
请参考 PDF 数据表获取器件具体的封装图。
编号(1)(2)(3) | 参数 | 最小值 | 最大值 | 单位 | |
---|---|---|---|---|---|
读取和写入 | |||||
1 | td(TURNAROUND) | 周转时间 | (TA)*E–3 | (TA)*E+2 | ns |
读取 | |||||
3 | tc(EMRCYCLE) | EMIF 读取周期时间 (EW = 0) | (RS+RST+RH)*E–3 | (RS+RST+RH)*E+2 | ns |
EMIF 读取周期时间 (EW=1)(4) | (RS+RST+RH+ (MEWC*16))*E–3 | (RS+RST+RH+ (MEWC*16))*E+2 | ns | ||
4 | tsu(EMCEL-EMOEL) | 输出建立时间,EMxCS[y:2]低电平至EMxOE低电平 (SS = 0) | (RS)*E–3 | (RS)*E+2 | ns |
输出建立时间,EMxCS[y:2]低电平至EMxOE低电平 (SS = 1) | -3 | 2 | ns | ||
5 | th(EMOEH-EMCEH) | 输出保持时间,EMxOE高电平至EMxCS[y:2]高电平 (SS = 0) | (RH)*E–3 | (RH)*E | ns |
输出保持时间,EMxOE高电平至EMxCS[y:2]高电平 (SS = 1) | -3 | 0 | ns | ||
6 | tsu(EMBAV-EMOEL) | 输出建立时间,EMxBA[y:0] 有效至EMxOE低 | (RS)*E–3 | (RS)*E+2 | ns |
7 | th(EMOEH-EMBAIV) | 输出保持时间,EMxOE高电平至 EMxBA[y:0] 无效 | (RH)*E–3 | (RH)*E | ns |
8 | tsu(EMAV-EMOEL) | 输出建立时间,EMxA[y:0] 有效至EMxOE低 | (RS)*E–3 | (RS)*E+2 | ns |
9 | th(EMOEH-EMAIV) | 输出保持时间,EMxOE高电平至 EMxA[y:0] 无效 | (RH)*E–3 | (RH)*E | ns |
10 | tw(EMOEL) | EMxOE有效低电平宽度 (EW = 0) | (RST)*E–1 | (RST)*E+1 | ns |
EMxOE有效低电平宽度 (EW = 1)(4) | (RST+(MEWC*16))*E–1 | (RST+(MEWC*16))*E+1 | ns | ||
11 | td(EMWAITH-EMOEH) | 延迟时间,从 EMxWAIT 取消置位到 EMxOE高电平 | 4E+10 | 5E+15 | ns |
29 | tsu(EMDQMV-EMOEL) | 输出建立时间,EMxDQM[y:0] 有效至 EMxOE低 | (RS)*E–3 | (RS)*E+2 | ns |
30 | th(EMOEH-EMDQMIV) | 输出保持时间,EMxOE高电平至 EMxDQM[y:0] 无效 | (RH)*E–3 | (RH)*E | ns |
写入 | |||||
15 | tc(EMWCYCLE) | EMIF 写入周期时间 (EW = 0) | (WS+WST+WH)*E–3 | (WS+WST+WH)*E+1 | ns |
EMIF 写入周期时间 (EW=1)(4) | (WS+WST+WH+ (MEWC*16))*E–3 | (WS+WST+WH+ (MEWC*16))*E+1 | ns | ||
16 | tsu(EMCEL-EMWEL) | 输出建立时间,EMxCS[y:2]低电平至EMxWE低电平 (SS = 0) | (WS)*E–3 | (WS)*E+1 | ns |
输出建立时间,EMxCS[y:2]低电平至EMxWE低电平 (SS = 1) | -3 | 1 | ns | ||
17 | th(EMWEH-EMCEH) | 输出保持时间,EMxWE高电平至EMxCS[y:2]高电平 (SS = 0) | (WH)*E–3 | (WH)*E | ns |
输出保持时间,EMxWE高电平至EMxCS[y:2]高电平 (SS = 1) | -3 | 0 | ns | ||
18 | tsu(EMDQMV-EMWEL) | 输出建立时间,EMxDQM[y:0] 有效至EMxWE低 | (WS)*E–3 | (WS)*E+1 | ns |
19 | th(EMWEH-EMDQMIV) | 输出保持时间,EMxWE高电平至 EMxDQM[y:0] 无效 | (WH)*E–3 | (WH)*E | ns |
20 | tsu(EMBAV-EMWEL) | 输出建立时间,EMxBA[y:0] 有效至EMxWE低 | (WS)*E–3 | (WS)*E+1 | ns |
21 | th(EMWEH-EMBAIV) | 输出保持时间,EMxWE高电平至 EMxBA[y:0] 无效 | (WH)*E–3 | (WH)*E | ns |
22 | tsu(EMAV-EMWEL) | 输出建立时间,EMxA[y:0] 有效至EMxWE低 | (WS)*E–3 | (WS)*E+1 | ns |
23 | th(EMWEH-EMAIV) | 输出保持时间,EMxWE高电平至 EMxA[y:0] 无效 | (WH)*E–3 | (WH)*E | ns |
24 | tw(EMWEL) | EMxWE有效低电平宽度 (EW = 0) | (WST)*E–1 | (WST)*E+1 | ns |
EMxWE有效低电平宽度 (EW = 1)(4) | (WST+(MEWC*16))*E–1 | (WST+(MEWC*16))*E+1 | ns | ||
25 | td(EMWAITH-EMWEH) | 延迟时间,从 EMxWAIT 取消置位到EMxWE高电平 | 4E+10 | 5E+15 | ns |
26 | tsu(EMDV-EMWEL) | 输出建立时间,EMxD[y:0] 有效至 EMxWE低 | (WS)*E–3 | (WS)*E+1 | ns |
27 | th(EMWEH-EMDIV) | 输出保持时间,EMxWE高电平至 EMxD[y:0] 无效 | (WH)*E–3 | (WH)*E | ns |