ZHCSJE1C February   2019  – December 2023 TMUX1111 , TMUX1112 , TMUX1113

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics (VDD = 5V ±10 %)
    6. 6.6 Electrical Characteristics (VDD = 3.3V ±10 %)
    7. 6.7 Electrical Characteristics (VDD = 1.8V ±10 %)
    8. 6.8 Electrical Characteristics (VDD = 1.2V ±10 %)
    9. 6.9 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 On-resistance
    2. 7.2 Off-leakage current
    3. 7.3 On-leakage current
    4. 7.4 Transition time
    5. 7.5 Break-before-make
    6. 7.6 Charge injection
    7. 7.7 Off isolation
    8. 7.8 Channel-to-Channel Crosstalk
    9. 7.9 Bandwidth
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Bidirectional operation
      2. 8.3.2 Rail to rail operation
      3. 8.3.3 1.8V Logic compatible inputs
      4. 8.3.4 Fail-safe logic
      5. 8.3.5 Ultra-Low Leakage Current
      6. 8.3.6 Ultra-Low Charge Injection
    4. 8.4 Device Functional Modes
    5. 8.5 Truth Tables
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application - Sample-and-Hold Circuit
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Detailed Design Procedure
      3. 9.2.3 Application Curve
    3. 9.3 Typical Application - Switched Gain Amplifier
      1. 9.3.1 Design Requirements
      2. 9.3.2 Detailed Design Procedure
      3. 9.3.3 Application Curve
    4. 9.4 Power Supply Recommendations
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 接收文档更新通知
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 静电放电警告
    6. 10.6 术语表
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • PW|16
  • RSV|16
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.5 Electrical Characteristics (VDD = 5V ±10 %)

at TA = 25°C, VDD = 5V (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
ANALOG SWITCH
RON On-resistance VS = 0V to VDD
ISD = 10mA
Refer to On-resistance		 25°C   2 4 Ω
–40°C to +85°C     4.5 Ω
–40°C to +125°C     4.9 Ω
ΔRON On-resistance matching between channels VS = 0V to VDD
ISD = 10mA
Refer to On-resistance		 25°C   0.13 Ω
–40°C to +85°C   0.4 Ω
–40°C to +125°C   0.5 Ω
RON FLAT On-resistance flatness VS = 0V to VDD
ISD = 10mA
Refer to On-resistance		 25°C   0.85 Ω
–40°C to +85°C   1.6 Ω
–40°C to +125°C   1.6 Ω
IS(OFF) Source off leakage current(1) VDD = 5V
Switch Off
VD = 4.5V / 1.5V
VS = 1.5V / 4.5V
Refer to Off-leakage current		 25°C –0.08 ±0.005 0.08 nA
–40°C to +85°C –0.3 0.3 nA
–40°C to +125°C –0.9 0.9 nA
ID(OFF) Drain off leakage current(1) VDD = 5V
Switch Off
VD = 4.5V / 1.5V
VS = 1.5V / 4.5V
Refer to Off-leakage current		 25°C –0.08 ±0.005 0.08 nA
–40°C to +85°C –0.3 0.3 nA
–40°C to +125°C –0.9 0.9 nA
ID(ON)
IS(ON)		 Channel on leakage current VDD = 5V
Switch On
VD = VS = 2.5V
Refer to On-leakage current		 25°C –0.025 ±0.003 0.025 nA
–40°C to +85°C –0.2 0.2 nA
–40°C to +125°C –0.95 0.95 nA
ID(ON)
IS(ON)		 Channel on leakage current VDD = 5V
Switch On
VD = VS = 4.5V / 1.5V
Refer to On-leakage current		 25°C –0.1 ±0.01 0.1 nA
–40°C to +85°C –0.35 0.35 nA
–40°C to +125°C –2 2 nA
LOGIC INPUTS (SELx)
VIH Input logic high  –40°C to +125°C 1.49   5.5 V
VIL Input logic low  –40°C to +125°C 0   0.87 V
IIH
IIL		 Input leakage current 25°C   ±0.005   µA
IIH
IIL		 Input leakage current –40°C to +125°C     ±0.06 µA
CIN Logic input capacitance 25°C   1 pF
CIN Logic input capacitance –40°C to +125°C   2 pF
POWER SUPPLY
IDD VDD supply current Logic inputs = 0V or 5.5V 25°C   0.008   µA
–40°C to +125°C     1 µA
DYNAMIC CHARACTERISTICS
tTRAN Transition time between channels VS = 3V
RL = 200 Ω, CL = 15pF
Refer to Transition time		 25°C   12   ns
–40°C to +85°C     18 ns
–40°C to +125°C     19 ns
tOPEN (BBM) Break before make time
(TMUX1113 Only)		 VS = 3V
RL = 200 Ω, CL = 15pF
Refer to Break-before-make		 25°C   8   ns
–40°C to +85°C 1     ns
–40°C to +125°C 1     ns
QC Charge Injection VS = 1V
RS = 0 Ω, CL = 1nF
Refer to Charge injection		 25°C –1.5 pC
OISO Off Isolation RL = 50 Ω, CL = 5pF
f = 1MHz
Refer to Off isolation		 25°C   –62   dB
RL = 50 Ω, CL = 5pF
f = 10MHz
Refer to Off isolation		 25°C   –40   dB
XTALK Crosstalk RL = 50 Ω, CL = 5pF
f = 1MHz
Refer to Channel-to Channel Crosstalk		 25°C   –100   dB
RL = 50 Ω, CL = 5pF
f = 10MHz
Refer to Channel-to Channel Crosstalk		 25°C   –90   dB
BW Bandwidth RL = 50 Ω, CL = 5pF
Refer to Bandwidth		 25°C   300   MHz
CSOFF Source off capacitance f = 1MHz 25°C   7   pF
CDOFF Drain off capacitance f = 1MHz 25°C   10   pF
CSON
CDON		 On capacitance f = 1MHz 25°C   17   pF
(1) When VS is 4.5V, VD is 1.5V or when VS is 1.5V, VD is 4.5V.
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