米6体育平台手机版

ZHCSK59B August 2019 – February 2024 TMUX1121 , TMUX1122 , TMUX1123

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机械数据 (封装 | 引脚)

DGK|8

散热焊盘机械数据 (封装 | 引脚)

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6.5 Electrical Characteristics (V_DD = 5V ±10 %)

at T_A = 25°C, V_DD = 5V (unless otherwise noted)

PARAMETER		TEST CONDITIONS	TA	MIN	TYP	MAX	UNIT
ANALOG SWITCH
R_ON	On-resistance	V_S = 0V to V_DD I_SD = 10mA Refer to Section 7.1	25°C		1.9	4	Ω
			–40°C to +85°C			4.5	Ω
			–40°C to +125°C			4.9	Ω
ΔR_ON	On-resistance matching between channels	V_S = 0V to V_DD I_SD = 10mA Refer to Section 7.1	25°C		0.13		Ω
			–40°C to +85°C			0.4	Ω
			–40°C to +125°C			0.5	Ω
R_{ON FLAT}	On-resistance flatness	V_S = 0V to V_DD I_SD = 10mA Refer to Section 7.1	25°C		0.85		Ω
			–40°C to +85°C			1.6	Ω
			–40°C to +125°C			1.6	Ω
I_S(OFF)	Source off leakage current⁽¹⁾	V_DD = 5V Switch Off V_D = 4.5V / 1.5V V_S = 1.5V / 4.5V Refer to Section 7.2	25°C	–0.08	±0.003	0.08	nA
			–40°C to +85°C	–0.3		0.3	nA
			–40°C to +125°C	–0.9		0.9	nA
I_D(OFF)	Drain off leakage current⁽¹⁾	V_DD = 5V Switch Off V_D = 4.5V / 1.5V V_S = 1.5V / 4.5V Refer to Section 7.2	25°C	–0.08	±0.003	0.08	nA
			–40°C to +85°C	–0.3		0.3	nA
			–40°C to +125°C	–0.9		0.9	nA
I_D(ON) I_S(ON)	Channel on leakage current	V_DD = 5V Switch On V_D = V_S = 4.5V / 1.5V Refer to Section 7.3	25°C	–0.1	±0.003	0.1	nA
			–40°C to +85°C	–0.35		0.35	nA
			–40°C to +125°C	–2		2	nA
LOGIC INPUTS (SELx)
V_IH	Input logic high		–40°C to +125°C	1.49		5.5	V
V_IL	Input logic low		–40°C to +125°C	0		0.87	V
I_IH I_IL	Input leakage current		25°C		±0.005		µA
I_IH I_IL	Input leakage current		–40°C to +125°C			±0.05	µA
C_IN	Logic input capacitance		25°C		1		pF
C_IN	Logic input capacitance		–40°C to +125°C			2	pF
POWER SUPPLY
I_DD	V_DD supply current	Logic inputs = 0V or 5.5V	25°C		0.007		µA
I_DD	V_DD supply current	Logic inputs = 0V or 5.5V	–40°C to +125°C			1	µA
DYNAMIC CHARACTERISTICS
t_TRAN	Transition time between channels	V_S = 3V R_L = 200Ω, C_L = 15pF Refer to Section 7.4	25°C		12		ns
			–40°C to +85°C			17	ns
			–40°C to +125°C			18	ns
t_{OPEN (BBM)}	Break before make time (TMUX1123 Only)	V_S = 3V R_L = 200Ω, C_L = 15pF Refer to Section 7.5	25°C		8		ns
			–40°C to +85°C	1			ns
			–40°C to +125°C	1			ns
Q_C	Charge Injection	V_S = 1V R_S = 0Ω, C_L = 1nF Refer to Section 7.6	25°C		–1.5		pC
O_ISO	Off Isolation	R_L = 50Ω, C_L = 5pF f = 1MHz Refer to Section 7.7	25°C		–62		dB
O_ISO	Off Isolation	R_L = 50Ω, C_L = 5pF f = 10MHz Refer to Section 7.7	25°C		–40		dB
X_TALK	Crosstalk	R_L = 50Ω, C_L = 5pF f = 1MHz Refer to Section 7.8	25°C		–100		dB
X_TALK	Crosstalk	R_L = 50Ω, C_L = 5pF f = 10MHz Refer to Section 7.8	25°C		–90		dB
BW	Bandwidth	R_L = 50Ω, C_L = 5pF Refer to Section 7.9	25°C		300		MHz
C_SOFF	Source off capacitance	f = 1MHz	25°C		6		pF
C_DOFF	Drain off capacitance	f = 1MHz	25°C		10		pF
C_SON C_DON	On capacitance	f = 1MHz	25°C		18		pF

(1) When V_S is 4.5V, V_D is 1.5V or when V_S is 1.5V, V_D is 4.5V.

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机械数据 (封装 | 引脚)

散热焊盘机械数据 (封装 | 引脚)

订购信息

6.5 Electrical Characteristics (VDD = 5V ±10 %)

6.5 Electrical Characteristics (V_DD = 5V ±10 %)