ZHCSK59B August 2019 – February 2024 TMUX1121 , TMUX1122 , TMUX1123
PRODUCTION DATA
The TMUX112x devices have a transmission gate topology, as shown in Figure 8-2. Any mismatch in the stray capacitance associated with the NMOS and PMOS causes an output level change whenever the switch is opened or closed.
The TMUX112x devices have special charge-injection cancellation circuitry that reduces the source-to-drain charge injection to -1.5pC at VS = 1V as shown in Figure 8-3.