ZHCSK56A August   2019  – July 2020 TMUX1208-Q1

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics (VDD = 5 V ±10 %)
    6. 6.6 Electrical Characteristics (VDD = 3.3 V ±10 %)
    7. 6.7 Electrical Characteristics (VDD = 1.8 V ±10 %)
    8. 6.8 Electrical Characteristics (VDD = 1.2 V ±10 %)
  7. Parameter Measurement Information
    1. 7.1  On-Resistance
    2. 7.2  Off-Leakage Current
    3. 7.3  On-Leakage Current
    4. 7.4  Transition Time
    5. 7.5  Break-Before-Make
    6. 7.6  tON(EN) and tOFF(EN)
    7. 7.7  Charge Injection
    8. 7.8  Off Isolation
    9. 7.9  Crosstalk
    10. 7.10 Bandwidth
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Bidirectional Operation
      2. 8.3.2 Rail to Rail Operation
      3. 8.3.3 1.8 V Logic Compatible Inputs
      4. 8.3.4 Fail-Safe Logic
      5. 8.3.5 Device Functional Modes
      6. 8.3.6 Truth Tables
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Layout Information
      2. 10.1.2 41
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
  12. 12Electrostatic Discharge Caution
  13. 13Glossary

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Electrical Characteristics (VDD = 3.3 V ±10 %)

at TA = 25°C, VDD = 3.3 V (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
ANALOG SWITCH
RON On-resistance VS = 0 V to VDD
ISD = 10 mA
Refer to Figure 7-1
25°C 9 Ω
–40°C to +85°C 15 Ω
–40°C to +125°C 17 Ω
ΔRON On-resistance matching between channels VS = 0 V to VDD
ISD = 10 mA
Refer to Figure 7-1
25°C 0.15 Ω
–40°C to +85°C 1 Ω
–40°C to +125°C 1 Ω
RON FLAT On-resistance flatness VS = 0 V to VDD
ISD = 10 mA
Refer to Figure 7-1
25°C 3 Ω
–40°C to +85°C 5 Ω
–40°C to +125°C 6 Ω
IS(OFF) Source off leakage current(1) VDD = 3.3 V
Switch Off
VD = 3 V / 1 V
VS = 1 V / 3 V
Refer to Figure 7-2
25°C ±75 nA
–40°C to +85°C -150 150 nA
–40°C to +125°C -175 175 nA
ID(OFF) Drain off leakage current(1) VDD = 3.3 V
Switch Off
VD = 3 V / 1 V
VS = 1 V / 3 V
Refer to Figure 7-2
25°C ±200 nA
–40°C to +85°C -500 500 nA
–40°C to +125°C -750 750 nA
ID(ON)
IS(ON)
Channel on leakage current VDD = 3.3 V
Switch On
VD = VS = 3 V / 1 V
Refer to Figure 7-3
25°C ±200 nA
–40°C to +85°C -500 500 nA
–40°C to +125°C -750 750 nA
LOGIC INPUTS (EN, A0, A1, A2)
VIH Input logic high -40°C to 125°C 1.35 5.5 V
VIL Input logic low -40°C to 125°C 0 0.8 V
IIH
IIL
Input leakage current 25°C ±0.005 µA
IIH
IIL
Input leakage current –40°C to +125°C ±0.10 µA
CIN Logic input capacitance 25°C 1 pF
CIN Logic input capacitance –40°C to +125°C 2 pF
POWER SUPPLY
IDD VDD supply current Logic inputs = 0 V or 5.5 V 25°C 0.01   µA
–40°C to +125°C   1.5 µA
DYNAMIC CHARACTERISTICS
tTRAN Transition time between channels VS = 2 V
RL = 200 Ω, CL = 15 pF
Refer to Figure 7-4
25°C 14 ns
–40°C to +85°C 25 ns
–40°C to +125°C 25 ns
tOPEN (BBM) Break before make time VS = 2 V
RL = 200 Ω, CL = 15 pF
Refer to Figure 7-5
25°C 8 ns
–40°C to +85°C 1 ns
–40°C to +125°C 1 ns
tON(EN) Enable turn-on time VS = 2 V
RL = 200 Ω, CL = 15 pF
Refer to Figure 7-6
25°C 17 ns
–40°C to +85°C 25 ns
–40°C to +125°C 25 ns
tOFF(EN) Enable turn-off time VS = 2 V
RL = 200 Ω, CL = 15 pF
Refer to Figure 7-6
25°C 7 ns
–40°C to +85°C 13 ns
–40°C to +125°C 13 ns
QC Charge Injection VS = VDD/2
RS = 0 Ω, CL = 1 nF
Refer to Figure 7-7
25°C ±7 pC
OISO Off Isolation RL = 50 Ω, CL = 5 pF
f = 1 MHz
Refer to Figure 7-8
25°C   -62   dB
RL = 50 Ω, CL = 5 pF
f = 10 MHz
Refer to Figure 7-8
25°C   -42   dB
XTALK Crosstalk RL = 50 Ω, CL = 5 pF
f = 1 MHz
Refer to Figure 7-9
25°C   -62   dB
RL = 50 Ω, CL = 5 pF
f = 10 MHz
Refer to Figure 7-9
25°C   -42   dB
BW Bandwidth RL = 50 Ω, CL = 5 pF
Refer to Figure 7-10
25°C 65 MHz
CSOFF Source off capacitance f = 1 MHz 25°C 13 pF
CDOFF Drain off capacitance f = 1 MHz 25°C 76 pF
CSON
CDON
On capacitance f = 1 MHz 25°C 85 pF
When VS is 3 V, VD is 1 V or when VS is 1 V, VD is 3 V.