ZHCSIN2C August   2018  – December 2018 TMUX1208 , TMUX1209

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      应用示例
      2.      TMUX1208、TMUX1209 方框图
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions TMUX1208
    2.     Pin Functions TMUX1209
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics (VDD = 5 V ±10 %)
    6. 7.6 Electrical Characteristics (VDD = 3.3 V ±10 %)
    7. 7.7 Electrical Characteristics (VDD = 1.8 V ±10 %)
    8. 7.8 Electrical Characteristics (VDD = 1.2 V ±10 %)
    9. 7.9 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
      1. 8.1.1  On-Resistance
      2. 8.1.2  Off-Leakage Current
      3. 8.1.3  On-Leakage Current
      4. 8.1.4  Transition Time
      5. 8.1.5  Break-Before-Make
      6. 8.1.6  tON(EN) and tOFF(EN)
      7. 8.1.7  Charge Injection
      8. 8.1.8  Off Isolation
      9. 8.1.9  Crosstalk
      10. 8.1.10 Bandwidth
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Bidirectional Operation
      2. 8.3.2 Rail to Rail Operation
      3. 8.3.3 1.8 V Logic Compatible Inputs
      4. 8.3.4 Fail-Safe Logic
      5. 8.3.5 Device Functional Modes
      6. 8.3.6 Truth Tables
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
    3. 9.3 Design Requirements
    4. 9.4 Detailed Design Procedure
    5. 9.5 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Layout Information
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 文档支持
      1. 12.1.1 相关文档
    2. 12.2 相关链接
    3. 12.3 接收文档更新通知
    4. 12.4 社区资源
    5. 12.5 商标
    6. 12.6 静电放电警告
    7. 12.7 术语表
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.8 Electrical Characteristics (VDD = 1.2 V ±10 %)

at TA = 25°C, VDD = 1.2 V (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
ANALOG SWITCH
RON On-resistance VS = 0 V to VDD
ISD = 10 mA
Refer to On-Resistance 		25°C 70 Ω
–40°C to +85°C 105 Ω
–40°C to +125°C 105 Ω
ΔRON On-resistance matching between channels VS = 0 V to VDD
ISD = 10 mA
Refer to On-Resistance 		25°C 0.15 Ω
–40°C to +85°C 1.5 Ω
–40°C to +125°C 1.5 Ω
IS(OFF) Source off leakage current(1) VDD = 1.32 V
Switch Off
VD = 1.2 V / 1 V
VS = 1 V / 1.2 V
Refer to Off-Leakage Current 		25°C ±75 nA
–40°C to +85°C -150 150 nA
–40°C to +125°C -175 175 nA
ID(OFF) Drain off leakage current(1) VDD = 1.32 V
Switch Off
VD = 1.2 V / 1 V
VS = 1 V / 1.2 V
Refer to Off-Leakage Current 		25°C ±200 nA
–40°C to +85°C -500 500 nA
–40°C to +125°C -750 750 nA
ID(ON)
IS(ON) 		Channel on leakage current VDD = 1.32 V
Switch On
VD = VS = 1.2 V / 1 V
Refer to On-Leakage Current 		25°C ±200 nA
–40°C to +85°C -500 500 nA
–40°C to +125°C -750 750 nA
LOGIC INPUTS (EN, A0, A1, A2)
VIH Input logic high –40°C to +125°C 0.96 5.5 V
VIL Input logic low –40°C to +125°C 0 0.36 V
IIH
IIL 		Input leakage current 25°C ±0.005 µA
IIH
IIL 		Input leakage current –40°C to +125°C ±0.10 µA
CIN Logic input capacitance 25°C 1 pF
–40°C to +125°C 2 pF
POWER SUPPLY
IDD VDD supply current Logic inputs = 0 V or 5.5 V 25°C 0.005   µA
–40°C to +125°C   0.8 µA
DYNAMIC CHARACTERISTICS
tTRAN Transition time between channels VS = 1 V
RL = 200 Ω, CL = 15 pF
Refer to Transition Time 		25°C   60 ns
–40°C to +85°C   210 ns
–40°C to +125°C     210 ns
tOPEN (BBM) Break before make time VS = 1 V
RL = 200 Ω, CL = 15 pF
Refer to Break-Before-Make 		25°C   28 ns
–40°C to +85°C 1     ns
–40°C to +125°C 1     ns
tON(EN) Enable turn-on time VS = 1 V
RL = 200 Ω, CL = 15 pF
Refer to tON(EN) and tOFF(EN) 		25°C 60   ns
–40°C to +85°C   190 ns
–40°C to +125°C     190 ns
tOFF(EN) Enable turn-off time VS = 1 V
RL = 200 Ω, CL = 15 pF
Refer to tON(EN) and tOFF(EN) 		25°C   45   ns
–40°C to +85°C   150 ns
–40°C to +125°C     150 ns
QC Charge Injection VS = VDD/2
RS = 0 Ω, CL = 1 nF
Refer to Charge Injection 		25°C   ±2 pC
OISO Off Isolation RL = 50 Ω, CL = 5 pF
f = 1 MHz
Refer to Off Isolation 		25°C   -62   dB
RL = 50 Ω, CL = 5 pF
f = 10 MHz
Refer to Off Isolation 		25°C   -42   dB
XTALK Crosstalk RL = 50 Ω, CL = 5 pF
f = 1 MHz
Refer to Crosstalk 		25°C   -62   dB
RL = 50 Ω, CL = 5 pF
f = 10 MHz
Refer to Crosstalk 		25°C   -42   dB
BW Bandwidth - TMUX1208 RL = 50 Ω, CL = 5 pF
Refer to Bandwidth 		25°C 65 MHz
Bandwidth - TMUX1209 RL = 50 Ω, CL = 5 pF
Refer to Bandwidth 		25°C 125 MHz
CSOFF Source off capacitance f = 1 MHz 25°C 13 pF
CDOFF Drain off capacitance - TMUX1208 f = 1 MHz 25°C 76 pF
Drain off capacitance - TMUX1209 f = 1 MHz 25°C 38 pF
CSON
CDON 		On capacitance - TMUX1208 f = 1 MHz 25°C 85 pF
On capacitance - TMUX1209 f = 1 MHz 25°C 42 pF
(1) When VS is 1.2 V, VD is 1 V, and vice versa.
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