ZHCSNX2 July 2021 TMUX1248
PRODUCTION DATA
- 1 特性
- 2 应用
- 3 说明
- 4 Revision History
- 5 Pin Configuration and Functions
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6 Specifications
- 6.1 Absolute Maximum Ratings
- 6.2 ESD Ratings
- 6.3 Recommended Operating Conditions
- 6.4 Thermal Information
- 6.5 Electrical Characteristics (VDD = 5 V ±10 %), GND = 0 V unless otherwise specified.
- 6.6 Electrical Characteristics (VDD = 3.3 V ±10 %), GND = 0 V unless otherwise specified.
- 6.7 Electrical Characteristics (VDD = 1.8 V ±10 %), GND = 0 V unless otherwise specified.
- 6.8 Electrical Characteristics (VDD = 1.2 V ±10 %), GND = 0 V unless otherwise specified.
- 6.9 Typical Characteristics
- 7 Parameter Measurement Information
- 8 Detailed Description
- 9 Power Supply Recommendations
- 10Layout
- 11Device and Documentation Support
- 12Mechanical, Packaging, and Orderable Information
7.6 Charge Injection
The TMUX1248 has a transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QC. Figure 7-6 shows the setup used to measure charge injection from Drain (D) to Source (Sx).
Figure 7-6 Charge-Injection Measurement Setup