ZHCSLR4F december 2019 – july 2023 TMUX1308-Q1 , TMUX1309-Q1
PRODUCTION DATA
- 1
- 1 特性
- 2 应用
- 3 说明
- 4 Revision History
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
-
7 Specifications
- 7.1 Absolute Maximum Ratings
- 7.2 ESD Ratings
- 7.3 Recommended Operating Conditions
- 7.4 Thermal Information: TMUX1308-Q1
- 7.5 Thermal Information: TMUX1309-Q1
- 7.6 Electrical Characteristics
- 7.7 Logic and Dynamic Characteristics
- 7.8 Timing Characteristics
- 7.9 Injection Current Coupling
- 7.10 Typical Characteristics
- 8 Parameter Measurement Information
-
9 Detailed Description
- 9.1 Overview
- 9.2 Functional Block Diagram
- 9.3
Feature Description
- 9.3.1 Bidirectional Operation
- 9.3.2 Rail-to-Rail Operation
- 9.3.3 1.8 V Logic Compatible Inputs
- 9.3.4 Fail-Safe Logic
- 9.3.5
Injection Current Control
- 9.3.5.1 TMUX13xx-Q1 is Powered, Channel is Unselected, and the Input Signal is Greater Than VDD (VDD = 5 V, VINPUT = 5.5 V)
- 9.3.5.2 TMUX13xx-Q1 is Powered, Channel is Selected, and the Input Signal is Greater Than VDD (VDD = 5 V, VINPUT = 5.5 V)
- 9.3.5.3 TMUX13xx-Q1 is Unpowered and the Input Signal has a Voltage Present (VDD = 0 V, VINPUT = 3 V)
- 9.4 Device Functional Modes
- 9.5 Truth Tables
- 10Application and Implementation
- 11Device and Documentation Support
- 12Mechanical, Packaging, and Orderable Information
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- BQB|16
订购信息
8.7 Charge Injection
The TMUX1308-Q1 and TMUX1309-Q1 device have a transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QC. Figure 8-7 shows the setup used to measure charge injection from source (Sx) to drain (D).
Figure 8-7 Charge-Injection Measurement Setup