9.1.6 Charge Injection

The TMUX6111, TMUX6112, and TMUX6113 have a simple transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol Q_INJ. Figure 22 shows the setup used to measure charge injection.

Figure 22. Charge-Injection Measurement Setup