9.3.2 Ultra-low Charge Injection

The TMUX6111, TMUX6112, and TMUX6113 are implemented with simple transmission gate topology, as shown in Figure 28. Any mismatch in the stray capacitance associated with the NMOS and PMOS causes an output level change whenever the switch is opened or closed. The devices utilize special charge-injection cancellation circuitry that reduces the source (Sx)-to-drain (Dx) charge injection to as low as 0.6 pC at V_S = 0 V, as shown in Figure 29.

Figure 28. Transmission Gate Topology

Figure 29. Source-to-Drain Charge Injection vs Source or Drain Voltage