8.1.7 Charge Injection

The TMUX6119 have a simple transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol Q_INJ. Figure 23 and Figure 24 shows the setup used to measure charge injection from source to drain and from drain to source. The charge injection is optimized for the TMUX6119 from the direction of source to drain.

Figure 23. Source to Drain Charge-Injection Measurement Setup

Figure 24. Drain to Source Charge-Injection Measurement Setup