ZHCSOX0B March 2023 – May 2024 TMUX6221 , TMUX6222
PRODUCTION DATA
- 1
- 1 特性
- 2 应用
- 3 说明
- 4 Pin Configuration and Functions
-
5 Specifications
- 5.1 Absolute Maximum Ratings
- 5.2 ESD Ratings
- 5.3 Thermal Information
- 5.4 Recommended Operating Conditions
- 5.5 Source or Drain Continuous Current
- 5.6 ±15 V Dual Supply: Electrical Characteristics
- 5.7 ±15 V Dual Supply: Switching Characteristics
- 5.8 36 V Single Supply: Electrical Characteristics
- 5.9 36 V Single Supply: Switching Characteristics
- 5.10 12 V Single Supply: Electrical Characteristics
- 5.11 12 V Single Supply: Switching Characteristics
- 5.12 ±5 V Dual Supply: Electrical Characteristics
- 5.13 ±5 V Dual Supply: Switching Characteristics
- 5.14 Typical Characteristics
- 6 Parameter Measurement Information
- 7 Detailed Description
- 8 Application and Implementation
- 9 Device and Documentation Support
- 10Revision History
- 11Mechanical, Packaging, and Orderable Information
6.7 Charge Injection
The TMUX622x has a transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QC. Figure 6-7 shows the setup used to measure charge injection from source (Sx) to drain (D).
Figure 6-7 Charge-Injection
Measurement Setup