ZHCSNI4C July   2020  – July 2024 TMUX6234

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Thermal Information
    4. 5.4  Recommended Operating Conditions
    5. 5.5  Source or Drain Continuous Current
    6. 5.6  36 V Single Supply: Electrical Characteristics 
    7. 5.7  36 V Single Supply: Switching Characteristics 
    8. 5.8  ±15 V Dual Supply: Electrical Characteristics 
    9. 5.9  ±15 V Dual Supply: Switching Characteristics 
    10. 5.10 12 V Single Supply: Electrical Characteristics 
    11. 5.11 12 V Single Supply: Switching Characteristics 
    12. 5.12 ±5 V Dual Supply: Electrical Characteristics 
    13. 5.13 ±5 V Dual Supply: Switching Characteristics 
    14. 5.14 Typical Characteristics
  7. Parameter Measurement Information
    1. 6.1  On-Resistance
    2. 6.2  Off-Leakage Current
    3. 6.3  On-Leakage Current
    4. 6.4  Transition Time
    5. 6.5  tON(EN) and tOFF(EN)
    6. 6.6  Break-Before-Make
    7. 6.7  tON (VDD) Time
    8. 6.8  Propagation Delay
    9. 6.9  Charge Injection
    10. 6.10 Off Isolation
    11. 6.11 Crosstalk
    12. 6.12 Bandwidth
    13. 6.13 THD + Noise
    14. 6.14 Power Supply Rejection Ratio (PSRR)
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Bidirectional Operation
      2. 7.3.2 Rail-to-Rail Operation
      3. 7.3.3 1.8 V Logic Compatible Inputs
      4. 7.3.4 Fail-Safe Logic
      5. 7.3.5 Latch-Up Immune
      6. 7.3.6 Ultra-Low Charge Injection
    4. 7.4 Device Functional Modes
    5. 7.5 Truth Tables
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 支持资源
    4. 9.4 Trademarks
    5. 9.5 静电放电警告
    6. 9.6 术语表
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Charge Injection

The TMUX6234 has a transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QINJ. Figure 6-9 shows the setup used to measure charge injection from source (Sx) to drain (D).

TMUX6234 Charge-Injection Measurement Setup Figure 6-9 Charge-Injection Measurement Setup