ZHCSM60B september   2021  – august 2023 TMUX8108 , TMUX8109

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Device Comparison Table
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings: TMUX810x Devices
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions: TMUX810x Devices
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics (Global): TMUX810x Devices
    6. 7.6  Electrical Characteristics (±15-V Dual Supply)
    7. 7.7  Electrical Characteristics (±36-V Dual Supply)
    8. 7.8  Electrical Characteristics (±50-V Dual Supply)
    9. 7.9  Electrical Characteristics (72-V Single Supply)
    10. 7.10 Electrical Characteristics (100-V Single Supply)
    11. 7.11 Switching Characteristics: TMUX810x Devices
    12. 7.12 Typical Characteristics
  9. 8 Parameter Measurement Information
    1. 8.1  On-Resistance
    2. 8.2  Off-Leakage Current
    3. 8.3  On-Leakage Current
    4. 8.4  Break-Before-Make Delay
    5. 8.5  Enable Turn-on and Turn-off Time
    6. 8.6  Transition Time
    7. 8.7  Charge Injection
    8. 8.8  Off Isolation
    9. 8.9  Crosstalk
    10. 8.10 Bandwidth
    11. 8.11 THD + Noise
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Bidirectional Operation
      2. 9.3.2 Flat On – Resistance
      3. 9.3.3 Protection Features
        1. 9.3.3.1 Fail-Safe Logic
        2. 9.3.3.2 ESD Protection
        3. 9.3.3.3 Latch-Up Immunity
      4. 9.3.4 1.8 V Logic Compatible Inputs
      5. 9.3.5 Integrated Pull-Down Resistor on Logic Pins
    4. 9.4 Device Functional Modes
      1. 9.4.1 Normal Mode
      2. 9.4.2 Truth Tables
  11. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
    3. 10.3 Power Supply Recommendations
    4. 10.4 Layout
      1. 10.4.1 Layout Guidelines
      2. 10.4.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 接收文档更新通知
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 静电放电警告
    6. 11.6 术语表
  13. 12Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • PW|16
  • RUM|16
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.10 Electrical Characteristics (100-V Single Supply)

VDD = +100 V, VSS = 0 V, GND = 0 V (unless otherwise noted) 
Typical at TA = 25℃  (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
ANALOG SWITCH
RON On-resistance VS = 0 V to +95 V
ID = –5 mA		 25°C 38 48 Ω
–40°C to +85°C 65
–40°C to +125°C 80
ΔRON On-resistance mismatch between channels VS = 0 V to +95 V
ID = –5 mA		 25°C 0.65 Ω
–40°C to +85°C 1.5
–40°C to +125°C 2.1
RON FLAT On-resistance flatness VS = 0 V to +95 V
ID = –5 mA		 25°C 0.6 Ω
RON DRIFT On-resistance drift VS = 0 V, IS = –5 mA –40°C to +125°C 0.25 Ω/°C
IS(OFF) Source off leakage current(1) Switch state is off
VS = +95 V / 1 V
VD = 1 V / +95 V		 25°C 0.02 nA
–40°C to +85°C –3 3
–40°C to +125°C –15 15
ID(OFF) Drain off leakage current(1) Switch state is off
VS = +95 V / 1 V
VD = 1 V / +95 V		 25°C 0.09 nA
–40°C to +85°C –8 8
–40°C to +125°C –40 40
IS(ON)
ID(ON)		 Channel on leakage current(2) Switch state is on
VS = VD = 1 V / +95 V		 25°C 0.1 nA
–40°C to +85°C –8 8
–40°C to +125°C –40 40
ΔIS(ON)
ΔID(ON)		 Leakage current mismatch between channels(2) Switch state is on
VS = VD = 1 V / +95 V		 25°C 50 pA
85°C 120
125°C 350
(1) When VS is 95 V, VD is 1 V. Or when VS is 1 V, VD is 95 V.
(2) When VS is at a voltage potential, VD is floating. Or when VD is at a voltage potential, VS is floating.
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