Latch-Up is a condition where a low impedance path is created between a supply pin and ground. This condition is caused by a trigger (current injection or over-voltage), but once activated the low impedance path remains even after the trigger is no longer present. This low impedance path may cause system upset or catastrophic damage due to excessive current levels. The Latch-Up condition typically requires a power cycle to eliminate the low impedance path.

In the TMUX821x devices, an insulating oxide layer is placed on top of the silicon substrate to prevent any parasitic junctions from forming. As a result, the devices are Latch-Up immune under all circumstances by device construction.

The TMUX821x devices are constructed on silicon on insulator (SOI) based process where an oxide layer is added between the PMOS and NMOS transistor of each CMOS switch to prevent parasitic structures from forming. The oxide layer is also known as an insulating trench and prevents triggering of latch up events due to over-voltage or current injections. The Latch-Up immunity feature allows the TMUX821x to be used in harsh environments. For more information on Latch-Up immunity, refer to Using Latch Up Immune Multiplexers to Help Improve System Reliability.