SLOS438F December   2004  – March 2017 TPA2012D2

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Dissipation Rating Table
    7. 7.7 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Fixed Gain Setting
      2. 9.3.2 Short-Circuit Protection
      3. 9.3.3 Operation With DACs and CODECs
      4. 9.3.4 Filter-Free Operation and Ferrite Bead Filters
    4. 9.4 Device Functional Modes
      1. 9.4.1 Shutdown Mode
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 TPA2012D2 With Differential Input Signal
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
          1. 10.2.1.2.1 Surface Mount Capacitors
          2. 10.2.1.2.2 Decoupling Capacitor (CS)
          3. 10.2.1.2.3 Input Capacitors (CI)
        3. 10.2.1.3 Application Curves
      2. 10.2.2 TPA2012D2 With Single-Ended Input Signal
        1. 10.2.2.1 Design Requirements
        2. 10.2.2.2 Detailed Design Procedure
        3. 10.2.2.3 Application Curves
  11. 11Power Supply Recommendations
    1. 11.1 Power Supply Decoupling Capacitor
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 Pad Side
      2. 12.1.2 Component Location
      3. 12.1.3 Trace Width
    2. 12.2 Layout Examples
    3. 12.3 Efficiency and Thermal Considerations
  13. 13Device and Documentation Support
    1. 13.1 Receiving Notification of Documentation Updates
    2. 13.2 Community Resources
    3. 13.3 Trademarks
    4. 13.4 Electrostatic Discharge Caution
    5. 13.5 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

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7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Supply voltage, VSS (AVDD, PVDD) Active mode –0.3 6 V
Shutdown mode –0.3 7
Input voltage, VI –0.3 VDD + 0.3 V
Continuous total power dissipation See Dissipation Rating Table
Operating junction temperature, TJ –40 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VSS Supply voltage, AVDD, PVDD 2.5 5.5 V
VIH High-level input voltage, SDL, SDR, G0, G1 1.3 V
VIL Low-level input voltage, SDL, SDR, G0, G1 0.35 V
TA Operating free-air temperature –40 85 °C

7.4 Thermal Information

THERMAL METRIC(1) TPA2012D2 UNIT
YZH (DSBGA) RTJ (WQFN)
16 PINS 20 PINS
RθJA Junction-to-ambient thermal resistance 71.4 34.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 0.4 34.3 °C/W
RθJB Junction-to-board thermal resistance 14 11.5 °C/W
ψJT Junction-to-top characterization parameter 1.8 0.4 °C/W
ψJB Junction-to-board characterization parameter 13.3 11.6 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance — 3.2 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics

TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
|VOO| Output offset voltage (measured differentially) Inputs ac grounded, AV = 6 dB, VDD = 2.5 to 5.5 V 5 25 mV
PSRR Power supply rejection ratio VDD = 2.5 to 5.5 V –75 –55 dB
Vicm Common-mode input voltage 0.5 VDD – 0.8 V
CMRR Common-mode rejection ration Inputs shorted together, VDD = 2.5 to 5.5 V –69 –50 dB
|IIH| High-level input current VDD = 5.5 V, VI = VDD 50 µA
|IIL| Low-level input current VDD = 5.5 V, VI = 0 V 5 µA
IDD Supply current VDD = 5.5 V, no load or output filter 6 9 mA
VDD = 3.6 V, no load or output filter 5 7.5
VDD = 2.5 V, no load or output filter 4 6
Shutdown mode 1.5 µA
rDS(on) Static drain-source on-state resistance VDD = 5.5 V 500 mΩ
VDD = 3.6 V 570
VDD = 2.5 V 700
Output impedance in shutdown mode V(SDR, SDL)= 0.35 V 2 kΩ
f(sw) Switching frequency VDD = 2.5 V to 5.5 V 250 300 350 kHz
Closed-loop voltage gain G0, G1 = 0.35 V 5.5 6 6.5 dB
G0 = VDD, G1 = 0.35 V 11.5 12 12.5
G0 = 0.35 V, G1 = VDD 17.5 18 18.5
G0, G1 = VDD 23.5 24 24.5
OPERATING CHARACTERISTICS, RL = 8 Ω
PO Output power (per channel) RL = 8 Ω VDD = 5 V, f = 1 kHz,
THD = 10%		 1.4 W
VDD = 3.6 V, f = 1 kHz,
THD = 10%		 0.72
RL = 4 Ω VDD = 5 V, f = 1 kHz,
THD = 10%		 2.1
THD+N Total harmonic distortion plus noise PO = 1 W, VDD = 5 V, AV = 6 dB, f = 1 kHz 0.14%
PO = 0.5 W, VDD = 5 V, AV = 6 dB, f = 1 kHz 0.11%
Channel crosstalk f = 1 kHz –85 dB
kSVR Supply ripple rejection ratio VDD = 5 V, AV = 6 dB, f = 217 Hz –77 dB
VDD = 3.6 V, AV = 6 dB, f = 217 Hz –73
CMRR Common mode rejection ratio VDD = 3.6 V, VIC = 1 Vpp, f = 217 Hz –69 dB
Input impedance Av = 6 dB 28.1 kΩ
Av = 12 dB 17.3
Av = 18 dB 9.8
Av = 24 dB 5.2
Start-up time from shutdown VDD = 3.6 V 3.5 ms
Vn Output voltage noise VDD = 3.6 V, f = 20 to 20 kHz, inputs are ac grounded,
AV = 6 dB		 No weighting 35 µV
A weighting 27

7.6 Dissipation Rating Table

PACKAGE TA = 25°C
POWER RATING(1)		 DERATING
FACTOR		 TA = 75°C
POWER RATING		 TA = 85°C
POWER RATING
RTJ 5.2 W 41.6 mW/°C 3.12 W 2.7 W
YZH 1.2 W 9.12 mW/°C 690 mW 600 mW
(1) This data was taken using 2-oz trace and copper pad that is soldered directly to a JEDEC standard 4-layer 3 in × 3 in PCB.

7.7 Typical Characteristics

TPA2012D2 thd_po_los438.gif Figure 1. Total Harmonic Distortion
vs Output Power
TPA2012D2 thd3_po_los438.gif Figure 3. Total Harmonic Distortion
vs Output Power
TPA2012D2 thd_f_los438.gif Figure 5. Total Harmonic Distortion vs Frequency
TPA2012D2 thd4_f_los438.gif Figure 7. Total Harmonic Distortion vs Frequency
TPA2012D2 thd5_f_los438.gif Figure 9. Total Harmonic Distortion vs Frequency
TPA2012D2 isd_vsd_los438.gif Figure 11. Supply Current vs Shutdown Voltage
TPA2012D2 tc_idd_po_los438.gif Figure 13. Supply Current vs Output Power
TPA2012D2 xtalk_los438.gif Figure 15. Crosstalk vs Frequency
TPA2012D2 tc_psrr_f_los438.gif Figure 17. Power Supply Rejection Ratio
vs Frequency
TPA2012D2 tc_cmrr_vicr_los438.gif Figure 19. Common-Mode Rejection Ratio
vs Common-Mode Input Voltage
TPA2012D2 psr_t_los438.gif Figure 21. GSM Power Supply Rejection vs Time
TPA2012D2 ksvr_cmv_los438.gif Figure 23. Supply Voltage Rejection Ratio
vs DC Common-Mode Voltage
TPA2012D2 tc_pd2_po_los438.gif Figure 25. Power Dissipation vs Output Power
TPA2012D2 tc_eff2_po_los438.gif Figure 27. Efficiency vs Output Power
TPA2012D2 tc_pd4_po_los438.gif Figure 29. Power Dissipation vs Output Power
TPA2012D2 tc_eff4_po_los438.gif Figure 31. Efficiency vs Output Power
TPA2012D2 po2_vdd_los438.gif Figure 33. Output Power vs Load Resistance
TPA2012D2 thd2_po_los438.gif Figure 2. Total Harmonic Distortion
vs Output Power
TPA2012D2 thd4_po_los438.gif Figure 4. Total Harmonic Distortion
vs Output Power
TPA2012D2 thd6_f_los438.gif Figure 6. Total Harmonic Distortion vs Frequency
TPA2012D2 thd9_f_los438.gif Figure 8. Total Harmonic Distortion vs Frequency
TPA2012D2 thd10_f_los438.gif Figure 10. Total Harmonic Distortion vs Frequency
TPA2012D2 idd_vdd_los438.gif Figure 12. Supply Current vs Supply Voltage
TPA2012D2 tc_idd2_po_los438.gif Figure 14. Supply Current vs Output Power
TPA2012D2 xtalk2_los438.gif Figure 16. Crosstalk vs Frequency
TPA2012D2 tc_psrr2_f_los438.gif Figure 18. Power Supply Rejection Ratio
vs Frequency
TPA2012D2 tc_cmrr_f_los438.gif Figure 20. Common-Mode Rejection Ratio
vs Frequency
TPA2012D2 tc_psr_f_los438.gif Figure 22. Power Supply Rejection vs Frequency
TPA2012D2 tc_pd_po_los438.gif Figure 24. Power Dissipation vs Output Power
TPA2012D2 tc_eff_po_los438.gif Figure 26. Efficiency vs Output Power
TPA2012D2 tc_pd3_po_los438.gif Figure 28. Power Dissipation vs Output Power
TPA2012D2 tc_eff3_po_los438.gif Figure 30. Efficiency vs Output Power
TPA2012D2 po_vdd_los438.gif Figure 32. Output Power vs Supply Voltage
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