ZHCSFM5A September   2016  – October 2016 TPA3245

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics
    6. 7.6  Audio Characteristics (BTL)
    7. 7.7  Audio Characteristics (SE)
    8. 7.8  Audio Characteristics (PBTL)
    9. 7.9  Typical Characteristics, BTL Configuration
    10. 7.10 Typical Characteristics, SE Configuration
    11. 7.11 Typical Characteristics, PBTL Configuration
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagrams
    3. 9.3 Feature Description
      1. 9.3.1 Error Reporting
    4. 9.4 Device Protection System
      1. 9.4.1 Overload and Short Circuit Current Protection
      2. 9.4.2 Signal Clipping and Pulse Injector
      3. 9.4.3 DC Speaker Protection
      4. 9.4.4 Pin-to-Pin Short Circuit Protection (PPSC)
      5. 9.4.5 Overtemperature Protection OTW and OTE
      6. 9.4.6 Undervoltage Protection (UVP) and Power-on Reset (POR)
      7. 9.4.7 Fault Handling
      8. 9.4.8 Device Reset
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 Stereo BTL Application
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedures
          1. 10.2.1.2.1 Decoupling Capacitor Recommendations
          2. 10.2.1.2.2 PVDD Capacitor Recommendation
          3. 10.2.1.2.3 PCB Material Recommendation
          4. 10.2.1.2.4 Oscillator
      2. 10.2.2 Application Curves
      3. 10.2.3 Typical Application, Single Ended (1N) SE
        1. 10.2.3.1 Design Requirements
        2. 10.2.3.2 Detailed Design Procedures
        3. 10.2.3.3 Application Curves
      4. 10.2.4 Typical Application, Differential (2N), PBTL (Outputs Paralleled before LC filter)
        1. 10.2.4.1 Design Requirements
        2. 10.2.4.2 Detailed Design Procedures
        3. 10.2.4.3 Application Curves
      5. 10.2.5 Typical Application, Differential (2N), PBTL (Outputs Paralleled after LC filter)
        1. 10.2.5.1 Design Requirements
        2. 10.2.5.2 Detailed Design Procedures
  11. 11Power Supply Recommendations
    1. 11.1 Power Supplies
      1. 11.1.1 VDD Supply
      2. 11.1.2 GVDD_X Supply
      3. 11.1.3 PVDD Supply
    2. 11.2 Powering Up
    3. 11.3 Powering Down
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Examples
      1. 12.2.1 BTL Application Printed Circuit Board Layout Example
      2. 12.2.2 SE Application Printed Circuit Board Layout Example
      3. 12.2.3 PBTL (Outputs Paralleled before LC filter) Application Printed Circuit Board Layout Example
      4. 12.2.4 PBTL (Outputs Paralleled after LC filter) Application Printed Circuit Board Layout Example
  13. 13器件和文档支持
    1. 13.1 文档支持
    2. 13.2 接收文档更新通知
    3. 13.3 社区资源
    4. 13.4 商标
    5. 13.5 静电放电警告
    6. 13.6 Glossary
  14. 14机械、封装和可订购信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DDV|44
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
Supply voltage BST_X to GVDD_X(2) –0.3 43 V
VDD to GND –0.3 13.2 V
GVDD_X to GND(2) –0.3 13.2 V
PVDD_X to GND(2) –0.3 43 V
DVDD to GND –0.3 4.2 V
AVDD to GND –0.3 8.5 V
VBG to GND -0.3 4.2 V
Interface pins OUT_X to GND(2) –0.3 43 V
BST_X to GND(2) –0.3 55.5 V
OC_ADJ, M1, M2, OSC_IOP, OSC_IOM, FREQ_ADJ, C_START, to GND –0.3 4.2 V
RESET, FAULT, CLIP_OTW to GND –0.3 4.2 V
INPUT_X to GND –0.3 7 V
Continuous sink current, RESET, FAULT, CLIP_OTW to GND 9 mA
TJ Operating junction temperature range 0 150 °C
Tstg Storage temperature range –40 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) These voltages represents the DC voltage + peak AC waveform measured at the terminal of the device in all conditions.

7.2 ESD Ratings

VALUE UNIT
VESD Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1) ±1000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±250 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN TYP MAX UNIT
PVDD_x Half-bridge supply DC supply voltage 12 30 31.5 V
GVDD_x Supply for logic regulators and gate-drive circuitry DC supply voltage 10.8 12 13.2 V
VDD Digital regulator supply voltage DC supply voltage 10.8 12 13.2 V
RL(BTL) Load impedance Output filter inductance within recommended value range 2.7 4 Ω
RL(SE) 1.5 3
RL(PBTL) 1.6 2
LOUT(BTL) Output filter inductance Minimum output inductance at IOC 5 μH
LOUT(SE) 5
LOUT(PBTL) 5
FPWM PWM frame rate selectable for AM interference avoidance; 1% Resistor tolerance Nominal 575 600 625 kHz
AM1 475 500 525
AM2 430 450 470
R(FREQ_ADJ) PWM frame rate programming resistor Nominal; Master mode 9.9 10 10.1 kΩ
AM1; Master mode 19.8 20 20.2
AM2; Master mode 29.7 30 30.3
CPVDD PVDD close decoupling capacitors 1.0 μF
ROC Over-current programming resistor Resistor tolerance = 5% 22 30 kΩ
ROC(LATCHED) Over-current programming resistor Resistor tolerance = 5% 47 64 kΩ
V(FREQ_ADJ) Voltage on FREQ_ADJ pin for slave mode operation Slave mode 3.3 V
TJ Junction temperature 0 125 °C

7.4 Thermal Information

THERMAL METRIC(1) TPA3251D2 UNIT
DDV 44-PINS HTSSOP
FIXED 85°C HEATSINK TEMPERATURE(2)
RθJA Junction-to-ambient thermal resistance 2.8(2) °C/W
RθJC(top) Junction-to-case (top) thermal resistance 0.5
RθJB Junction-to-board thermal resistance n/a
ψJT Junction-to-top characterization parameter 0.9
ψJB Junction-to-board characterization parameter n/a
RθJC(bot) Junction-to-case (bottom) thermal resistance n/a
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
(2) Thermal data are obtained with 85°C heat sink temperature using thermal compound with 0.7W/mK thermal conductivity and 2mil thickness. In this model heat sink temperature is considered to be the ambient temperature and only path for dissipation is to the heatsink.

7.5 Electrical Characteristics

PVDD_X = 30 V, GVDD_X = 12 V, VDD = 12 V, TC (Case temperature) = 75°C, fS = 600 kHz, unless otherwise specified.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INTERNAL VOLTAGE REGULATOR AND CURRENT CONSUMPTION
DVDD Voltage regulator, only used as reference node VDD = 12 V 3.3 V
AVDD Voltage regulator, only used as reference node VDD = 12 V 7.8 V
IVDD VDD supply current Operating, 50% duty cycle 40 mA
Idle, reset mode 10
IGVDD_X Gate-supply current per full-bridge 50% duty cycle 19 mA
Reset mode 2.5
IPVDD_X PVDD idle current per full bridge 50% duty cycle with recommended output filter 15 mA
Reset mode, No switching 1.1 mA
ANALOG INPUTS
RIN Input resistance 24 kΩ
VIN Maximum input voltage swing 7 V
IIN Maximum input current 1 mA
G Inverting voltage Gain VOUT/VIN 18 dB
OSCILLATOR
fOSC(IO+) (1) Nominal, Master Mode FPWM × 6 3.45 3.6 3.75 MHz
AM1, Master Mode 2.85 3 3.15
AM2, Master Mode 2.58 2.7 2.82
VIH High level input voltage 1.86 V
VIL Low level input voltage 1.45 V
OUTPUT-STAGE MOSFETs
RDS(on) Drain-to-source resistance, low side (LS) TJ = 25°C, Includes metallization resistance,
GVDD = 12 V		 65 mΩ
Drain-to-source resistance, high side (HS) 65 mΩ
I/O PROTECTION
Vuvp,VDD,GVDD Undervoltage protection limit, GVDD_x and VDD 8.6 V
Vuvp,VDD, GVDD,hyst (2) 0.85 V
Vuvp,PVDD Undervoltage protection limit, PVDD_x 9.7 V
Vuvp,PVDD,hyst (2) 1.25 V
OTW Overtemperature warning, CLIP_OTW(2) 115 125 135 °C
OTWhyst (2) Temperature drop needed below OTW temperature for CLIP_OTW to be inactive after OTW event. 20 °C
OTE(2) Overtemperature error 145 155 165 °C
OTEhyst (2) A reset needs to occur for FAULT to be released following an OTE event 20 °C
OTE-OTW(differential) (2) OTE-OTW differential 30 °C
OLPC Overload protection counter fPWM = 600 kHz (1024 PWM cycles) 1.7 ms
IOC Overcurrent limit protection Resistor – programmable, nominal peak current in 1Ω load, ROCP = 22 kΩ 13.5 A
IOC(LATCHED) Overcurrent limit protection Resistor – programmable, peak current in 1Ω load, ROCP = 47kΩ 13.5 A
IDCspkr DC Speaker Protection Current Threshold BTL current imbalance threshold 2 A
IOCT Overcurrent response time Time from switching transition to flip-state induced by overcurrent. 150 ns
IPD Output pulldown current of each half Connected when RESET is active to provide bootstrap charge. Not used in SE mode. 3 mA
STATIC DIGITAL SPECIFICATIONS
VIH High level input voltage M1, M2, OSC_IOP, OSC_IOM, RESET 1.9 V
VIL Low level input voltage 0.8 V
Ilkg Input leakage current 100 μA
OTW/SHUTDOWN (FAULT)
RINT_PU Internal pullup resistance, CLIP_OTW to DVDD, FAULT to DVDD 20 26 32 kΩ
VOH High level output voltage Internal pullup resistor 3 3.3 3.6 V
VOL Low level output voltage IO = 4 mA 200 500 mV
Device fanout CLIP_OTW, FAULT No external pullup 30 devices
(1) Nominal, AM1 and AM2 use same internal oscillator with fixed ratio 6 : 5 : 4.5
(2) Specified by design.

7.6 Audio Characteristics (BTL)

PCB and system configuration are in accordance with recommended guidelines. Audio frequency = 1 kHz, PVDD_X = 30 V, GVDD_X = 12 V, RL = 4 Ω, fS = 600 kHz, ROC = 22 kΩ, TC = 75°C, Output Filter: LDEM = 10 μH, CDEM = 1 µF, mode = 00, AES17 + AUX-0025 measurement filters,unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
PO Power output per channel RL = 3 Ω, 10% THD+N 145 W
RL = 4 Ω, 10% THD+N 115
RL = 3 Ω, 1% THD+N 115
RL = 4 Ω, 1% THD+N 95
THD+N Total harmonic distortion + noise 1 W 0.005%
Vn Output integrated noise A-weighted, AES17 filter, Input Capacitor Grounded 50 μV
|VOS| Output offset voltage Inputs AC coupled to GND 20 60 mV
SNR Signal-to-noise ratio(1) 112 dB
DNR Dynamic range 113 dB
Pidle Power dissipation due to Idle losses (IPVDD_X) PO = 0, 4 channels switching(2) 0.45 W
(1) SNR is calculated relative to 1% THD+N output level.
(2) Actual system idle losses also are affected by core losses of output inductors.

7.7 Audio Characteristics (SE)

PCB and system configuration are in accordance with recommended guidelines. Audio frequency = 1 kHz, PVDD_X = 30 V, GVDD_X = 12 V, RL = 2 Ω, fS = 600 kHz, ROC = 22 kΩ, TC = 75°C, Output Filter: LDEM = 15 μH, CDEM = 680 nF, MODE = 11, AES17 + AUX-0025 measurement filters, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
PO Power output per channel RL = 2 Ω, 10% THD+N 55 W
RL = 3 Ω, 10% THD+N 39
RL = 4 Ω, 10% THD+N 30
RL = 2 Ω, 1% THD+N 44
RL = 3 Ω, 1% THD+N 32
RL = 4 Ω, 1% THD+N 25
THD+N Total harmonic distortion + noise 1 W 0.01%
Vn Output integrated noise A-weighted, AES17 filter, Input Capacitor Grounded 100 μV
SNR Signal to noise ratio(1) A-weighted 106 dB
DNR Dynamic range A-weighted 101 dB
Pidle Power dissipation due to idle losses (IPVDD_X) PO = 0, 4 channels switching(2) 0.45 W
(1) SNR is calculated relative to 1% THD+N output level.
(2) Actual system idle losses are affected by core losses of output inductors.

7.8 Audio Characteristics (PBTL)

PCB and system configuration are in accordance with recommended guidelines. Audio frequency = 1 kHz, PVDD_X = 30 V, GVDD_X = 12 V, RL = 2 Ω, fS = 600 kHz, ROC = 22 kΩ, TC = 75°C, Output Filter: LDEM = 10 μH, CDEM = 1 µF, MODE = 10, outputs paralleled before LC filter, AES17 + AUX-0025 measurement filters, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
PO Power output per channel RL = 2 Ω, 10% THD+N 230 W
RL = 3 Ω, 10% THD+N 160
RL = 4 Ω, 10% THD+N 125
RL = 2 Ω, 1% THD+N 185
RL = 3 Ω, 1% THD+N 130
RL = 4 Ω, 1% THD+N 100
THD+N Total harmonic distortion + noise 1 W 0.005%
Vn Output integrated noise A-weighted, AES17 filter, Input Capacitor Grounded 45 μV
SNR Signal to noise ratio(1) A-weighted 113 dB
DNR Dynamic range A-weighted 113 dB
Pidle Power dissipation due to idle losses (IPVDD_X) PO = 0, 4 channels switching(2) 0.45 W
(1) SNR is calculated relative to 1% THD+N output level.
(2) Actual system idle losses are affected by core losses of output inductors.

7.9 Typical Characteristics, BTL Configuration

All Measurements taken at audio frequency = 1 kHz, PVDD_X = 30 V, GVDD_X = 12 V, RL = 4 Ω, fS = 600 kHz, ROC = 22 kΩ, TC = 75°C, Output Filter: LDEM = 10 μH, CDEM = 1 µF, mode = 00, AES17 + AUX-0025 measurement filters,unless otherwise noted.
TPA3245 D001_SLASEC7.gif
RL = 4 Ω P = 1W, 20W, 60W TC = 75°C
Figure 1. Total Harmonic Distortion+Noise vs Frequency
TPA3245 D003_SLASEC7.gif
RL = 3 Ω, 4 Ω, 8 Ω TC = 75°C
Figure 3. Total Harmonic Distortion + Noise vs Output Power
TPA3245 D005_SLASEC7.gif
RL = 3 Ω, 4 Ω, 8 Ω THD+N = 1% TC = 75°C
Figure 5. Output Power vs Supply Voltage
TPA3245 D007_SLASEC7.gif
RL = 3 Ω, 4 Ω, 8 Ω THD+N = 10% TC = 75°C
Figure 7. System Power Loss vs Output Power
TPA3245 D009_SLASEC7.gif
4 Ω, VREF = 21.21 V (1% Output power) FFT = 16384
AUX-0025 filter, 80 kHz analyzer BW TC = 75°C
Figure 9. Noise Amplitude vs Frequency
TPA3245 D002_SLASEC7.gif
RL = 4 Ω P = 1W, 20W, 60W TC = 75°C
AUX-0025 filter, 80 kHz analyzer BW
Figure 2. Total Harmonic Distortion+Noise vs Frequency
TPA3245 D004_SLASEC7.gif
RL = 3 Ω, 4 Ω, 8 Ω THD+N = 10% TC = 75°C
Figure 4. Output Power vs Supply Voltage
TPA3245 D006_SLASEC7.gif
RL = 3 Ω, 4 Ω, 8 Ω THD+N = 10% TC = 75°C
Figure 6. System Efficiency vs Output Power
TPA3245 D008_SLASEC7.gif
RL = 3 Ω, 4 Ω, 8 Ω THD+N = 10% TC = 75°C
Figure 8. Output Power vs Case Temperature

7.10 Typical Characteristics, SE Configuration

All Measurements taken at audio frequency = 1 kHz, PVDD_X = 30 V, GVDD_X = 12 V, RL = 3 Ω, fS = 600 kHz, ROC = 22 kΩ, TC = 75°C, Output Filter: LDEM = 15 μH, CDEM = 680 nF, MODE = 11, AES17 + AUX-0025 measurement filters, unless otherwise noted.
TPA3245 D010_SLASEC7.gif
RL = 2Ω, 3Ω, 4Ω TC = 75°C
Figure 10. Total Harmonic Distortion+Noise vs Output Power
TPA3245 D012_SLASEC7.gif
RL = 3Ω P = 1W, 5W, 20W TC = 75°C
AUX-0025 filter, 80 kHz analyzer BW
Figure 12. Total Harmonic Distortion+Noise vs Frequency
TPA3245 D014_SLASEC7.gif
RL = 2Ω, 3Ω, 4Ω THD+N = 1% TC = 75°C
Figure 14. Output Power vs Supply Voltage
TPA3245 D011_SLASEC7.gif
RL = 3Ω P = 1W, 5W, 20W TC = 75°C
Figure 11. Total Harmonic Distortion+Noise vs Frequency
TPA3245 D013_SLASEC7.gif
RL = 2Ω, 3Ω, 4Ω THD+N = 10% TC = 75°C
Figure 13. Output Power vs Supply Voltage
TPA3245 D015_SLASEC7.gif
RL = 2Ω, 3Ω, 4Ω THD+N = 10% TC = 75°C
Figure 15. Output Power vs Case Temperature

7.11 Typical Characteristics, PBTL Configuration

All Measurements taken at audio frequency = 1kHz, PVDD_X = 30V, GVDD_X = 12V, RL = 2Ω, fS = 600 kHz, ROC = 22kΩ, TC = 75°C, Output Filter: LDEM = 10μH, CDEM = 1 µF, MODE = 10, outputs paralleled before LC filter, AES17 + AUX-0025 measurement filters, unless otherwise noted.
TPA3245 D016_SLASEC7.gif
RL = 2Ω, 3Ω, 4Ω TC = 75°C
Figure 16. Total Harmonic Distortion+Noise vs Output Power
TPA3245 D018_SLASEC7.gif
RL = 2Ω P = 1W, 40W, 120W TC = 75°C
AUX-0025 filter, 80 kHz analyzer BW
Figure 18. Total Harmonic Distortion+Noise vs Frequency
TPA3245 D020_SLASEC7.gif
RL = 2Ω, 3Ω, 4Ω THD+N = 1% TC = 75°C
Figure 20. Output Power vs Supply Voltage
TPA3245 D017_SLASEC7.gif
RL = 2Ω P = 1W, 40W, 120W TC = 75°C
Figure 17. Total Harmonic Distortion+Noise vs Frequency
TPA3245 D019_SLASEC7.gif
RL = 2Ω, 3Ω, 4Ω THD+N = 10% TC = 75°C
Figure 19. Output Power vs Supply Voltage
TPA3245 D021_SLASEC7.gif
RL = 2Ω, 3Ω, 4Ω THD+N = 10% TC = 75°C
Figure 21. Output Power vs Case Temperature
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