ZHCSFI9B August   2016  – September 2023 TPD1E10B09-Q1

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Revision History
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings—AEC Specification
    3. 6.3 ESD Ratings—IEC Specification
    4. 6.4 ESD Ratings—ISO Specification
    5. 6.5 Recommended Operating Conditions
    6. 6.6 Thermal Information
    7. 6.7 Electrical Characteristics
    8. 6.8 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  AEC-Q101 Qualified
      2. 7.3.2  IEC 61000-4-2 ESD Protection
      3. 7.3.3  ISO 10605 ESD Protection
      4. 7.3.4  IEC 61000-4-5 Surge Protection
      5. 7.3.5  IO Capacitance
      6. 7.3.6  Dynamic Resistance
      7. 7.3.7  DC Breakdown Voltage
      8. 7.3.8  Ultra Low Leakage Current
      9. 7.3.9  Clamping Voltage
      10. 7.3.10 Industrial Temperature Range
      11. 7.3.11 Space-Saving Footprint
    4. 7.4 Device Functional Modes
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 接收文档更新通知
    3. 9.3 支持资源
    4. 9.4 Trademarks
    5. 9.5 静电放电警告
    6. 9.6 术语表
  11. 10Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Feature Description

The TPD1E10B09-Q1 is a bidirectional TVS with high ESD protection level. This device protects circuit from ESD strikes up to ±20-kV contact and ±20-kV air-gap specified in the IEC 61000-4-2 level 4 international standard. The device can also handle up to 4.5-A surge current (IEC 61000-4-5 8/20 µs). The I/O capacitance of 10 pF supports a data rate up to 500 Mbps. This clamping device has a small dynamic resistance of 0.5 Ω typically. This makes the clamping voltage low when the device is actively protecting other circuits. For example, the clamping voltage is only 13 V when the device is taking 1-A transient current. The breakdown is bidirectional so that this protection device is a good fit for GPIO, especially audio lines which carry bidirectional signals. Low leakage allows the diode to conserve power when working below the VRWM. The industrial temperature range of –40°C to +125°C makes this ESD device work at extensive temperatures in most environments. The space-saving 0402 package can fit into small electronic devices like mobile equipment and wearables.