ZHCSFI9B August 2016 – September 2023 TPD1E10B09-Q1
PRODUCTION DATA
PARAMETER | TEST CONDITION | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VRWM | Reverse stand-off voltage | Pin 1 to 2 or pin 2 to 1 | 9 | V | ||
ILEAK | Leakage current | Pin 1 = 5 V, pin 2 = 0 V | 100 | nA | ||
VClamp1,2 | Clamp voltage with ESD strike on pin 1, pin 2 grounded | IPP = 1 A, tp = 8/20 μs(2) | 13 | V | ||
IPP = 5 A, tp = 8/20 μs(2) | 17 | |||||
VClamp2,1 | Clamp voltage with ESD strike on pin 2, pin 1 grounded | IPP = 1 A, tp = 8/20 μs(2) | 13 | V | ||
IPP = 4.5 A, tp = 8/20 μs(2) | 20 | |||||
RDYN | Dynamic resistance | Pin 1 to pin 2(1) | 0.5 | Ω | ||
Pin 2 to pin 1(1) | 0.5 | |||||
CIO | I/O capacitance | VIO = 2.5 V; f = 1 MHz | 10 | pF | ||
VBR1,2 | Break-down voltage, pin 1 to pin 2 | IIO = 1 mA | 9.5 | V | ||
VBR2,1 | Break-down voltage, pin 2 to pin 1 | IIO = 1 mA | 9.5 | V |